MPS6725

MPS6724, MPS6725 One Watt Darlington Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 BASE 2 • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage MPS6724 MPS6725 Collector −Base Voltage MPS6724 MPS6725 Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 50 60 12 1000 1.0 8.0 2.5 20 −55 to +150 Vdc mAdc W mW/°C W mW/°C °C 1 2 Symbol VCEO 40 50 Vdc Value Unit Vdc EMITTER 1 TO−92 (TO−226) CASE 29−10 STYLE 1 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W MPS 672x AYWW G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPS672x = Device Code x = 4 or 5 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 3 Publication Order Number: MPS6724/D MPS6724, MPS6725 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 1000 mAdc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 1000 mAdc, IB = 2.0 mAdc) Base −Emitter On Voltage (IC = 1000 mAdc, VCE = 5.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. fT Ccb 100 − 1000 10 MHz pF hFE 25,000 4,000 VCE(sat) VBE(on) − − − 40,000 1.5 2.0 Vdc Vdc − MPS6724 MPS6725 IEBO V(BR)CES MPS6724 MPS6725 V(BR)CBO MPS6724 MPS6725 V(BR)EBO ICBO − − − 100 100 100 nAdc 50 60 12 − − − Vdc nAdc 40 50 − − Vdc Vdc Symbol Min Max Unit TYPICAL CHARACTERISTICS 3.0 k 2.0 k CURRENT LIMIT DUTY CYCLE ≤ 10% THERMAL LIMIT SECOND BREAKDOWN LIMIT 100 ms 1.0 ms 1.0 k 1.0 s 500 TA = 25°C 200 1.5 TC = 25°C I C , COLLECTOR CURRENT (mA) 2.0 5.0 10 20 30 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. Active Region — Safe Operating Area http://onsemi.com 2 MPS6724, MPS6725 TJ = 125°C VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k −55°C VCE = 5.0 V 3.0 2.5 2.0 1.5 1.0 0.5 0.1 IC = 10 mA IC = 50 mA IC = 250 mA IC = 500 mA TJ = 25°C h FE , DC CURRENT GAIN 25°C 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 500 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 2. DC Current Gain Figure 3. Collector Saturation Region q V , TEMPERATURE COEFFICIENTS (mV/° C) 1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 1.0 0.8 0.6 VBE(on) @ VCE = 5.0 V −1.0 −2.0 −3.0 −4.0 −5.0 −6.0 *APPLIES FOR IC/IB ≤ hFE/3.0 *qVC FOR VCE(sat) 25°C TO 125°C −55°C TO 25°C 25°C TO 125°C qVB FOR VBE −55°C TO 25°C VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. “ON” Voltages Figure 5. Temperature Coefficients 4.0 h FE , SMALL−SIGNAL CURRENT GAIN VCE = 5.0 V TJ = 25°C f = 100 MHz 20 TJ = 25°C C, CAPACITANCE (pF) 10 7.0 5.0 Cobo Cibo 2.0 1.0 0.8 0.6 0.4 0.2 3.0 2.0 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 6. High Frequency Current Gain Figure 7. Capacitance http://onsemi.com 3 MPS6724, MPS6725 ORDERING INFORMATION Device MPS6724 MPS6724G MPS6725 MPS6725G MPS6724RLRA MPS6724RLRAG MPS6725RLRP MPS6725RLRPG Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) 2000 Units / Tape & Ammo Box 2000 Units / Tape & Reel 5000 Units / Bulk 5000 Units / Bulk Shipping † †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MPS6724, MPS6725 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL A R P F L B SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− K XX G H R 123 D J SECTION X−X NC N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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