MPS6726_10

MPS6726 One Watt Amplifier Transistors PNP Silicon Features http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER • This is a Pb−Free Device* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value −30 −40 −5.0 −1.0 1.0 8.0 2.5 20 − 55 to +150 Unit Vdc Vdc Vdc Adc W mW/°C W mW/°C °C 3 STRAIGHT LEAD BULK PACK 12 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W 1 3 BENT LEAD TAPE & REEL AMMO PACK 2 TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM MPS 6726 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPS6726G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 Package TO−92 (Pb−Free) Shipping† 5000 Units / Bulk August, 2010 − Rev. 4 1 Publication Order Number: MPS6726/D MPS6726 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −100 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector Cutoff Current (VCB = −40 Vdc, IE = 0) Emitter Cutoff Current (VEB = −5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = −100 mAdc, VCE = −1.0 Vdc) (IC = −1000 mAdc, VCE = −1.0 Vdc) Collector − Emitter Saturation Voltage (IC = −1000 mAdc, IB = −100 mAdc) Base − Emitter On Voltage (IC = −1000 mAdc, VCE = −1.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Collector−Base Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Small−Signal Current Gain (IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Ccb hfe − 2.5 30 25 pF − hFE 60 50 − − − 250 −0.5 −1.2 − V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO −30 −40 −5.0 − − − Vdc Vdc Vdc mAdc mAdc Symbol Min Max Unit − − −0.1 −0.1 VCE(sat) VBE(on) Vdc Vdc 200 VCE , COLLECTOR VOLTAGE (VOLTS) -1.0 IC = -10 mA IC = -50 mA IC = IC = IC = IC = -100 -250 -500 mA -1000 mA mA mA -0.8 h FE , CURRENT GAIN 100 70 50 VCE = -1.0 V TJ = 25°C -0.6 -0.4 -0.2 TJ = 25°C 0 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IB, BASE CURRENT (mA) 20 -10 -20 -50 -100 -200 -500 -1000 -50 -100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector Saturation Region http://onsemi.com 2 MPS6726 -1.0 TJ = 25°C -0.8 V, VOLTAGE (VOLTS) VBE(SAT) @ IC/IB = 10 qV B, TEMPERATURE COEFFICIENT (mV/ °C) -0.8 -1.2 -0.6 VBE(ON) @ VCE = -1.0 V -1.6 qVB for VBE -2.0 -0.4 -0.2 VCE(SAT) @ IC/IB = 10 -2.4 0 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 -2.8 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 160 TJ = 25°C 120 100 70 50 VCE = -10 V TJ = 25°C f = 20 MHz 80 Cibo 40 Cobo 30 -10 0 -20 -50 -100 -200 -500 -1000 IC, COLLECTOR CURRENT (mA) Cobo Cibo -5.0 -1.0 -10 -15 -20 -2.0 -3.0 -4.0 VR, REVERSE VOLTAGE (VOLTS) -25 -5.0 Figure 5. Current Gain — Bandwidth Product Figure 6. Capacitance -1.0 k 1.0 s I C , COLLECTOR CURRENT (mA) -500 TA = 25°C TC = 25°C 1.0 ms 100 ms -200 -100 -50 DUTY CYCLE ≤ 10% MPS6726 MPS6727 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -2.0 -5.0 -10 -20 -30 -40 -20 -10 -1.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area http://onsemi.com 3 MPS6726 PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A B P F L K STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI­ MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- R XX H V 1 D G J C N N SECTION X−X STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A R B P T SEATING PLANE BENT LEAD TAPE & REEL AMMO PACK K NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- G XX V 1 D J C N SECTION X−X ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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