MPS750

MPS750

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    MPS750 - Amplifier Transistors - ON Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
MPS750 数据手册
MPS650, MPS651, NPN MPS750, MPS751, PNP MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD MPS650 MPS750 40 60 5.0 2.0 625 5.0 1.5 12 − 55 to +150 MPS651 MPS751 60 80 Unit Vdc Vdc Vdc Adc mW mW/°C W mW/°C °C 2 BASE http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER NPN COLLECTOR 3 1 EMITTER PNP PD TJ, Tstg MARKING DIAGRAM MPS xxx AYWW Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W TO−92 CASE 29−11 xxx A Y WW = Specific Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 May, 2005 − Rev. 2 1 Publication Order Number: MPS650/D MPS650, MPS651, NPN MPS750, MPS751, PNP ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 100 mAdc, IE = 0 ) Emitter − Base Breakdown Voltage (IC = 0, IE = 10 mAdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 50 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector − Emitter Saturation Voltage (IC = 2.0 A, IB = 200 mA) (IC = 1.0 A, IB = 100 mA) Base−Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V) Base − Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (Note 2) (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 75 − MHz hFE 75 75 75 40 − − − − − − − − 0.5 0.3 1.0 1.2 − MPS650, MPS750 MPS651, MPS751 MPS650, MPS750 MPS651, MPS751 MPS650, MPS750 MPS651, MPS751 V(BR)CEO 40 60 60 80 5.0 − − − − − Vdc Symbol Min Max Unit V(BR)CBO Vdc V(BR)EBO ICBO Vdc mAdc − − − 0.1 0.1 0.1 IEBO mAdc VCE(sat) Vdc VBE(on) VBE(sat) Vdc Vdc http://onsemi.com 2 MPS650, MPS651, NPN MPS750, MPS751, PNP NPN 300 270 hFE , DC CURRENT GAIN 240 210 180 150 120 90 60 30 0 10 20 50 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) 25°C TJ = 125°C VCE = 2.0 V hFE , DC CURRENT GAIN 250 225 200 175 150 125 100 75 50 25 0 −10 −20 −50 −100 −200 −500 −1.0 A −2.0 A −4.0 A IC, COLLECTOR CURRENT (mA) −55 °C 25°C TJ = 125°C PNP VCE = −2.0 V −55 °C Figure 1. MPS650, MPS651 Typical DC Current Gain 2.0 1.8 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 VCE(sat) @ IC/IB = 10 200 500 1.0 A IC, COLLECTOR CURRENT (mA) 2.0 A 4.0 A VBE(on) @ VCE = 2.0 V VBE(sat) @ IC/IB = 10 Figure 2. MPS750, MPS751 Typical DC Current Gain PNP NPN −2.0 −1.8 −1.6 −1.4 −1.2 −1.0 −0.8 −0.6 −0.4 −0.2 0 −50 −100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 −200 −500 −1.0 A IC, COLLECTOR CURRENT (mA) −2.0 A −4.0 A Figure 3. MPS650, MPS651 On Voltages Figure 4. MPS750, MPS751 On Voltages http://onsemi.com 3 MPS650, MPS651, NPN MPS750, MPS751, PNP VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A TJ = 25°C VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) NPN −1.0 −0.9 −0.8 −0.7 −0.6 −0.5 −0.4 −0.3 −0.2 −0.1 IC = −10 mA PNP TJ = 25°C IC = −500 mA IC = −100 mA IC = −2.0 A 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 IB, BASE CURRENT (mA) −50 −100−200 −500 Figure 5. MPS650, MPS651 Collector Saturation Region NPN Figure 6. MPS750, MPS751 Collector Saturation Region PNP 10 4.0 IC, COLLECTOR CURRENT 2.0 1.0 0.5 0.2 0.1 TA = 25°C −10 −4.0 1.0 ms 100 ms −2.0 −1.0 −0.5 T C = 2 5° C −0.2 −0.1 −0.05 −0.02 100 −0.01 −1.0 TA = 25°C 1.0 ms MPS75 0 MPS75 1 100 ms MPS65 0 MPS65 1 TC = 25°C 0.05 0.02 0.01 1.0 WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −2.0 −5.0 −10 −20 −50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) −100 Figure 7. MPS650, MPS651 SOA, Safe Operating Area Figure 8. MPS750, MPS751 SOA, Safe Operating Area http://onsemi.com 4 MPS650, MPS651, NPN MPS750, MPS751, PNP ORDERING INFORMATION Device MPS650 MPS650G MPS650RLRA MPS650RLRAG MPS650ZL1 MPS650ZL1G MPS651 MPS651G MPS651RLRA MPS651RLRAG MPS651RLRBG MPS651RLRM MPS651RLRMG MPS750 MPS750G MPS750RLRA MPS750RLRAG MPS750RLRP MPS750RLRPG MPS751 MPS751G MPS751RLRA MPS751RLRAG MPS751RLRP MPS751RLRPG MPS751ZL1 MPS751ZL1G Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping † 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Tape & Ammunition 2000 / Tape & Ammunition 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Tape & Ammunition 2000 / Tape & Ammunition 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Tape & Ammunition 2000 / Tape & Ammunition 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Tape & Ammunition 2000 / Tape & Ammunition 2000 / Tape & Ammunition 2000 / Tape & Ammunition †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MPS650, MPS651, NPN MPS750, MPS751, PNP PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX H V 1 D G J C N N SECTION X−X DIM A B C D G H J K L N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MPS650/D
MPS750
物料型号: - MPS650、MPS651、MPS750、MPS751

器件简介: 这些型号均为NPN型和PNP型放大晶体管,常用于各种放大电路中。

引脚分配: - TO-92封装的晶体管具有三个引脚:集电极、基极和发射极。具体的引脚排列请参考PDF中的MARKING DIAGRAM。

参数特性: - 最大额定值: - 集电极-发射极电压(VCE):MPS650和MPS750分别为40V和60V。 - 集电极-基极电压(VCB):MPS650和MPS750分别为60V和80V。 - 发射极-基极电压(VEB):5.0V。 - 集电极电流(Ic):2.0A。 - 总功耗(PD):MPS650和MPS750在25°C时分别为625mW和5.0W。 - 工作和存储结温范围(TJ,Tstg):-55至+150°C。

- 热特性: - 结到环境的热阻(ROJA):200°C/W。 - 结到封装的热阻(ROJC):83.3°C/W。

功能详解: 这些晶体管具有高增益、低饱和电压的特性,适用于音频放大、电源控制和驱动等应用。

应用信息: - 这些晶体管适用于音频放大、电源控制、开关应用等多种电子电路。

封装信息: - 提供TO-92和TO-92(Pb-Free)封装选项,具体订购信息和包装尺寸请参考PDF文档中的ORDERING INFORMATION和PACKAGE DIMENSIONS部分。
MPS750 价格&库存

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