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Is Now
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www.onsemi.com
onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NPN - MPS650, MPS651;
PNP - MPS750, MPS751
Amplifier Transistors
Features
• These are Pb−Free Devices*
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
MPS650; MPS750
MPS651; MPS751
VCE
Collector −Base Voltage
MPS650; MPS750
MPS651; MPS751
VCB
Emitter −Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
IC
2.0
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
Value
Unit
Vdc
40
60
Vdc
60
80
THERMAL CHARACTERISTICS
2
BASE
COLLECTOR
3
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
TO−92
CASE 29
STYLE 1
1
12
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
VCE
200
°C/W
Thermal Resistance, Junction−to−Case
VCB
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
AMPS
xxx
YWW G
G
xxx
A
Y
WW
G
= 650, 750, 651, or 751
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 4
1
Publication Order Number:
MPS650/D
NPN − MPS650, MPS651; PNP − MPS750, MPS751
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
60
−
−
60
80
−
−
5.0
−
−
−
0.1
0.1
−
0.1
75
75
75
40
−
−
−
−
−
−
0.5
0.3
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
MPS650, MPS750
MPS651, MPS751
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 )
V(BR)CBO
MPS650, MPS750
MPS651, MPS751
Emitter −Base Breakdown Voltage
(IC = 0, IE = 10 mAdc)
V(BR)EBO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
ICBO
MPS650, MPS750
MPS651, MPS751
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 50 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
−
Collector −Emitter Saturation Voltage
(IC = 2.0 A, IB = 200 mA)
(IC = 1.0 A, IB = 100 mA)
VCE(sat)
Vdc
Base−Emitter On Voltage
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
−
1.0
Vdc
Base −Emitter Saturation Voltage
(IC = 1.0 A, IB = 100 mA)
VBE(sat)
−
1.2
Vdc
fT
75
−
MHz
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 2)
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
NPN
PNP
300
250
270
TJ = 125°C
210
180
25°C
150
120
90
-55°C
150
100
-55°C
75
30
25
50
25°C
125
50
20
VCE = -2.0 V
175
60
0
10
TJ = 125°C
200
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
240
225
VCE = 2.0 V
0
-10 -20
100 200
500 1.0 A 2.0 A 4.0 A
IC, COLLECTOR CURRENT (mA)
Figure 1. MPS650, MPS651
Typical DC Current Gain
-50 -100 -200 -500 -1.0 A -2.0 A -4.0 A
IC, COLLECTOR CURRENT (mA)
Figure 2. MPS750, MPS751
Typical DC Current Gain
http://onsemi.com
2
NPN − MPS650, MPS651; PNP − MPS750, MPS751
PNP
-2.0
1.8
-1.8
1.6
-1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
NPN
2.0
1.4
1.2
1.0
VBE(sat) @ IC/IB = 10
0.8
VBE(on) @ VCE = 2.0 V
0.6
0.4
-1.4
-1.2
VBE(sat) @ IC/IB = 10
-1.0
-0.8
VBE(on) @ VCE = 2.0 V
-0.6
-0.4
VCE(sat) @ IC/IB = 10
0.2
VCE(sat) @ IC/IB = 10
-0.2
0
0
50
100
200
500
1.0 A
IC, COLLECTOR CURRENT (mA)
2.0 A
4.0 A
-50
NPN
1.0
0.9
0.8
TJ = 25°C
0.7
0.6
0.5
0.4
0.3
IC = 10 mA IC = 100 mA
IC = 500 mA
IC = 2.0 A
0.2
0.1
0
0.05 0.1 0.2
0.5 1.0 2.0 5.0 10 20
IB, BASE CURRENT (mA)
50 100 200 500
-0.9
TJ = 25°C
-0.8
-0.7
-0.6
-0.5
-0.4
IC = -500 mA
-0.3
-0.1
IC = -10 mA
PNP
IC, COLLECTOR CURRENT
-4.0
1.0 ms
0.05
0.02
0.01
1.0
TA = 25°C
-50 -100-200 -500
Figure 6. MPS750, MPS751
Collector Saturation Region
4.0
0.1
IC = -100 mA
0
-0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
IB, BASE CURRENT (mA)
-10
0.2
IC = -2.0 A
-0.2
NPN
0.5
-4.0 A
PNP
10
1.0
-2.0 A
-1.0
Figure 5. MPS650, MPS651
Collector Saturation Region
2.0
-200
-500 -1.0 A
IC, COLLECTOR CURRENT (mA)
Figure 4. MPS750, MPS751
On Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. MPS650, MPS651
On Voltages
-100
100 ms
-2.0
1.0 ms
-1.0
MPS65
0
MPS65
1
-0.5
-0.2
TC = 25°C
-0.1
-0.05
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
5.0
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-0.02
-0.01
-1.0
100
Figure 7. MPS650, MPS651 SOA,
Safe Operating Area
TA = 25°C
100 ms
MPS75
0
MPS75
1
TC = 25°C
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-5.0
-10
-20
-50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. MPS750, MPS751 SOA,
Safe Operating Area
http://onsemi.com
3
-100
NPN − MPS650, MPS651; PNP − MPS750, MPS751
ORDERING INFORMATION
Package
Shipping†
MPS650G
TO−92
(Pb−Free)
5000 Units / Bulk
MPS650RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPS650ZL1G
TO−92
(Pb−Free)
2000 / Tape & Ammunition
MPS651G
TO−92
(Pb−Free)
5000 Units / Bulk
MPS651RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPS651RLRMG
TO−92
(Pb−Free)
2000 / Tape & Ammunition
MPS750G
TO−92
(Pb−Free)
5000 Units / Bulk
MPS750RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPS750RLRPG
TO−92
(Pb−Free)
2000 / Tape & Ammunition
MPS751G
TO−92
(Pb−Free)
5000 Units / Bulk
MPS751RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPS751RLRPG
TO−92
(Pb−Free)
2000 / Tape & Ammunition
MPS751ZL1G
TO−92
(Pb−Free)
2000 / Tape & Ammunition
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
NPN − MPS650, MPS651; PNP − MPS750, MPS751
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
N
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
G
K
D
X X
J
V
1
C
N
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
--2.04
2.66
1.50
4.00
2.93
--3.43
--STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MPS650/D