ON Semiconductor
MPS4126
Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCE
–25
Vdc
Collector–Base Voltage
VCB
–25
Vdc
Emitter–Base Voltage
VEB
–4.0
Vdc
Collector Current — Continuous
IC
–200
mAdc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
–55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°C/W
Thermal Resistance, Junction to Case
RJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR
3
2
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
–25
—
–25
—
–4.0
—
—
–50
—
–50
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mA, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = –10 A, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IC = 0, IE = –10 A)
V(BR)EBO
Collector Cutoff Current
(VCB = –20 V, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
IEBO
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2
1
Vdc
Vdc
Vdc
nAdc
nAdc
Publication Order Number:
MPS4126/D
MPS4126
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
120
60
360
—
—
–0.4
—
–0.95
170
—
—
4.5
—
11.5
120
480
—
4.0
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –2.0 mA, VCE = –1.0 V)
(IC = –50 mA, VCE = –1.0 V)
hFE
Collector–Emitter Saturation Voltage
(IC = –50 mA, IB = –5.0 mA)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = –50 mA, IB = –5.0 mA)
VBE(sat)
—
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –20 V, f = 100 MHz)
fT
Output Capacitance
(VCB = –5.0 V, IE = 0, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = –0.5 V, IC = 0, f = 1.0 MHz)
Cib
Small–Signal Current Gain
(IC = –2.0 mA, VCE = 1.0 V, f = 1.0 kHz)
hfe
Noise Figure
(IC = –100 A, VCE = –5.0 V, RS = 1.0 kΩ, f = 1.0 kHz)
NF
http://onsemi.com
2
MHz
pF
pF
—
dB
MPS4126
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
http://onsemi.com
3
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
MPS4126
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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4
MPS4126/D
