ON Semiconductor
MPSA28
MPSA29*
Darlington Transistors
NPN Silicon
*ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating
Symbol
MPSA28
MPSA29
Unit
Collector–Emitter Voltage
VCES
80
100
Vdc
Collector–Base Voltage
VCBO
80
100
Vdc
Emitter–Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
–55 to +150
°C
Operating and Storage Junction
Temperature Range
1
2
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
COLLECTOR 3
THERMAL CHARACTERISTICS
Characteristic
3
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°C/W
Thermal Resistance, Junction to Case
RJC
83.3
°C/W
BASE
2
EMITTER 1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
80
100
—
—
—
—
80
100
—
—
—
—
12
—
—
—
—
—
—
100
100
—
—
—
—
500
500
—
—
100
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CES
MPSA28
MPSA29
Vdc
V(BR)CBO
MPSA28
MPSA29
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPSA28
MPSA29
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
(VCE = 80 Vdc, VBE = 0)
MPSA28
MPSA29
Vdc
ICBO
nAdc
ICES
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
Vdc
nAdc
nAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
1
Publication Order Number:
MPSA28/D
MPSA28 MPSA29
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
ON
Min
Typ
Max
10,000
10,000
—
—
—
—
—
—
0.7
0.8
1.2
1.5
Unit
CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.01 mAdc)
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
1.4
2.0
Vdc
fT
125
200
—
MHz
Cobo
—
5.0
8.0
pF
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2. fT = hfe ftest.
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2
MPSA28 MPSA29
200
1.8
TA = 125°C
100
50
TA = 25°C
20
TA = -55°C
V, VOLTAGE (VOLTS)
h FE , DC CURRENT GAIN (k)
VCE = 5.0 V
10
5.0
2.0
5.0
10
20
100
50
200
500
VCE , COLLECTOR VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENT (mV/ °C)
10
20
100
50
200
500
1k
2.4
25°C to 125°C
-55°C to 25°C
25°C to 125°C
-55°C to 25°C
-4.0
VB for VBE
2.0
5.0
10
20
100
50
TA = 25°C
2.0
IC = 500 mA
1.6
1.2
IC = 100 mA
IC = 10 mA
IC = 250 mA
0.8
0.4
500
200
0.2
1.0 2.0
10
20
100 200
1 k 1.5 k
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (A)
Figure 3. Temperature Coefficients
Figure 4. Collector Saturation Region
10
500
1.0 ms
h fe , HIGH FREQUENCY CURRENT GAIN
1k
I C , COLLECTOR CURRENT (mA)
5.0
Figure 2. “ON” Voltages
-3.0
100 s
1.0 s
200
10
1.0
2.0
Figure 1. DC Current Gain
-2.0
20
VCE(S) @ IC/IB = 1.0 k
IC, COLLECTOR CURRENT (mA)
VC for VCE(S)
50
1.0
IC, COLLECTOR CURRENT (mA)
-1.0
100
VBE(ON) @ VCE = 5.0 V
1.2
0.6
1.0
1k
0
-5.0
1.0
TA = 25°C
1.4
0.8
2.0
1.0
1.0
VBE(S) @ IC/IB = 1.0 k
1.6
TC = 25°C
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSA28
VALID FOR DUTY CYCLE 10%
MPSA29
2.0
5.0
10
20
50
100
5.0
VCE = 5.0 V
TA = 25°C
f = 100 MHz
2.0
1.0
0.5
0.2
0.1
0.3 0.5
1.0
2.0
5.0
10
20
50
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 5. Active Region — Safe Operating
Area
Figure 6. High Frequency Current Gain
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3
200 300
MPSA28 MPSA29
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–11
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
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MPSA28/D
