MPSA43RLRA

MPSA43RLRA

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    MPSA43RLRA - High Voltage Transistors - ON Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
MPSA43RLRA 数据手册
MPSA42, MPSA43 High Voltage Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage MPSA43 MPSA42 Collector − Base Voltage MPSA43 MPSA42 Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO Value 200 300 Vdc 200 300 6.0 500 625 5.0 1.5 12 − 55 to +150 Vdc mAdc mW mW/°C W mW/°C °C 12 Unit Vdc 2 BASE 1 EMITTER VCBO VEBO IC PD 1 PD 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PACK 2 TO−92 (TO−226AA) CASE 29−11 TJ, Tstg MARKING DIAGRAM MPS A4x AYWWG G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/mW °C/mW Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. x = 2 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 6 1 Publication Order Number: MPSA42/D MPSA42, MPSA43 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector − Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. MPSA42 MPSA43 fT Ccb 50 − MHz pF − − 3.0 4.0 MPSA42 MPSA43 hFE − 25 40 40 − − − − − − Vdc 0.5 0.4 0.9 Vdc MPSA42 MPSA43 MPSA42 MPSA43 MPSA42 MPSA43 MPSA42 MPSA43 V(BR)CEO Vdc 300 200 300 200 6.0 − − Vdc − − − Vdc mAdc Symbol Min Max Unit V(BR)CBO V(BR)EBO ICBO − − − − 0.1 0.1 0.1 0.1 IEBO mAdc VCE(sat) VBE(sat) http://onsemi.com 2 MPSA42, MPSA43 ORDERING INFORMATION Device MPSA42G MPSA42RL1G MPSA42RLRAG MPSA42RLRMG MPSA42RLRPG MPSA42ZL1G MPSA43RLRA Package TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 Shipping† 5000 Units / Box 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 MPSA42, MPSA43 120 100 hFE, DC CURRENT GAIN 80 60 40 -55°C 20 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 25°C TJ = +125°C VCE = 10 Vdc Figure 1. DC Current Gain 100 Ceb @ 1MHz C, CAPACITANCE (pF) 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V Figure 3. “ON” Voltages http://onsemi.com 4 MPSA42, MPSA43 100 fT, CURRENT−GAIN−BANDWIDTH PRODCUT (MHz) IC, COLLECTOR CURRENT (A) VCE = 2 V TA = 25°C 1 10 ms 1.0 s 10 0.1 1 0.1 1 10 100 0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 4. Current−Gain−Bandwidth Product Figure 5. Safe Operating Area http://onsemi.com 5 MPSA42, MPSA43 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A R P L SEATING PLANE B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE K XX H V 1 D G J C N N SECTION X−X DIM A B C D G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- K G XX V 1 D J C N SECTION X−X DIM A B C D G J K N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MPSA42/D
MPSA43RLRA
### 物料型号 - 型号:MPS A42和MPS A43

### 器件简介 - 这些是NPN硅高电压晶体管,由ON Semiconductor制造。它们采用Pb-free封装,并且有多种封装选项。

### 引脚分配 - TO-92 (TO-226AA) CASE 29-11: - 直插引脚: - PIN 1: 发射极(Emitter) - PIN 2: 基极(Base) - PIN 3: 集电极(Collector) - 弯插引脚: - PIN 1: 发射极(Emitter) - PIN 2: 集电极(Collector) - PIN 3: 基极(Base)

### 参数特性 - 最大额定值: - 集电极-发射极电压(VCEO):MPS A43为200V,MPS A42为300V - 集电极-基极电压(VCBO):MPS A43为200V,MPS A42为300V - 发射极-基极电压(VEBO):6.0V - 集电极电流(Ic):500mAdc - 总器件耗散(PD):MPS A43为625mW,MPS A42为5.0mW/°C - 工作和存储结温范围(TJ.Tstg):-55至+150

- 热特性: - 热阻,结到环境(RBJA):200°C/mW - 热阻,结到封装(ReJC):83.3°C/mW

### 功能详解 - 该晶体管适用于高电压应用,具有较大的集电极-发射极电压和集电极-基极电压,适用于需要高电压和大电流的应用场合。

### 应用信息 - 这些晶体管适用于一般工业应用中的高电压开关和放大。

### 封装信息 - 提供TO-92 (Pb-Free)封装,以及其他多种封装选项。具体订购和包装信息可在数据手册的第3页找到。
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