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MPSA64 / MMBTA64 / PZTA64
PNP Darlington Transistor
Features
• This device is designed for applications requiring extremely high current gain at currents to 800 mA.
• Sourced from Process 61.
MMBTA64
MPSA64
PZTA64
C
C
E
E
TO-92
SOT-23
Absolute Maximum Ratings*
Symbol
SOT-223
B
Mark:2V
EBC
C
B
Ta = 25°C unless otherwise noted
Value
Units
VCES
Collector-Emitter Voltage
-30
V
VCBO
Collector-Base Voltage
-30
V
VEBO
Emitter-Base Voltage
-10
V
IC
TJ, Tstg
Parameter
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-1.2
A
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
PD
Ta = 25°C unless otherwise noted
Max.
Parameter
MPSA64
625
5.0
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
*MMBTA64
350
2.8
Units
**PZTA64
1,000
8.0
mW
mW/°C
°C/W
357
°C/W
125
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 2011 Fairchild Semiconductor Corporation
MPSA64 / MMBTA64 / PZTA64 Rev. B0
www.fairchildsemi.com
1
MPSA64 / MMBTA64 / PZTA64 — PNP Darlington Transistor
November 2011
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Condition
Min.
Max.
Units
OFF CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = -100μA, IB = 0
-30
V
ICBO
Collector-Cutoff Current
VCB = -30V, IE = 0
-100
nA
IEBO
Emitter-Cutoff Current
VEB = -10V, IC = 0
-100
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
10,000
20,000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -100mA, IB = -0.1mA
-1.5
V
VBE(on)
Base-Emitter On Voltage
IC = -100mA, VCE = -5.0V
-2.0
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = -10mA, VCE = -5.0V,
f = 100MHz
125
MHz
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Typical Pulsed Current Gain
vs Collector Current
VCESAT - COLLECTOR EM ITTE R VOLTAGE (V)
h FE- TYPICAL PULSED CURRENT GAIN (K)
Typical Performance Characteristics
50
VCE = 5V
40
30
125 °C
20
10
0
0.01
25 °C
- 40 °C
0.1
I C - COLLECTOR CURRENT (A)
1
© 2011 Fairchild Semiconductor Corporation
MPSA64 / MMBTA64 / PZTA64 Rev. B0
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
β = 1000
1.2
- 40 °C
0.8
25 °C
125 °C
0.4
0
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
www.fairchildsemi.com
2
MPSA64 / MMBTA64 / PZTA64 — PNP Darlington Transistor
Electrical Characteristics
2
V BE( ON)- BASE EMITTER ON VOLTAGE (V)
VBESAT - BASE EMITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
β = 1000
- 40 °C
1.6
1.2
25 °C
125 °C
0.8
0.4
0
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
Base Emitter ON Voltage vs
Collector Current
2
1.2
25 °C
125 °C
0.8
V CE = 5V
0.4
0
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
Input and Output Capacitance
vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
16
100
f = 1.0 MHz
V CB = 15V
CAPACITANCE (pF)
I CBO - COLLE CTOR CURRENT (nA)
- 40 °C
1.6
10
1
0.1
12
8
C ib
4
C ob
0.01
25
50
75
100
T A - AMBIE NT TEMP ERATURE ( ° C)
0
0.1
125
1
10
REVERSE VOLTAGE (V)
100
Power Dissipation vs
Ambient Temperature
P D - POWER DISSIPATION (W)
1
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
TEMPERATURE ( o C)
© 2011 Fairchild Semiconductor Corporation
MPSA64 / MMBTA64 / PZTA64 Rev. B0
125
150
www.fairchildsemi.com
3
MPSA64 / MMBTA64 / PZTA64 — PNP Darlington Transistor
Typical Performance Characteristics (continued)
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Rev. I57
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