MPSW01AG

MPSW01, MPSW01A One Watt High Current Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage MPSW01 MPSW01A MPSW01 MPSW01A Symbol VCEO Value 30 40 40 50 5.0 1000 1.0 8.0 2.5 20 − 55 to +150 Unit Vdc 2 BASE 1 EMITTER Collector − Base Voltage VCBO Vdc Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg Vdc mAdc W mW/°C W mW/°C °C TO−92 (TO−226AE) CASE 29−10 STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPS W01x AYWW G G x = 01A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. February, 2010 − Rev. 5 1 Publication Order Number: MPSW01/D MPSW01, MPSW01A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) MPSW01 MPSW01A MPSW01 MPSW01A V(BR)CEO 30 40 40 50 5.0 − − − − − − − − 0.1 0.1 0.1 Vdc Symbol Min Max Unit Collector − Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Vdc Emitter − Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector − Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) Base−Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MPSW01 MPSW01A V(BR)EBO ICBO Vdc mAdc IEBO hFE mAdc − 55 60 50 − − 50 − − − − 0.5 1.2 − 20 VCE(sat) VBE(on) fT Cobo Vdc Vdc MHz pF ORDERING INFORMATION Device MPSW01 MPSW01G MPSW01AG MPSW01ARLRAG MPSW01ARLRPG Package TO−92 TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) Shipping† 5000 Units / Bulk 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 300 200 h FE , CURRENT GAIN VCE , COLLECTOR VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 0.6 IC = 1000 mA IC = 10 mA IC = 50 mA IC = IC = 500 mA IC = 250 mA 100 mA 100 70 50 VCE = 1.0 V TJ = 25°C 0.4 0.2 30 10 20 Figure 1. DC Current Gain 50 200 100 IC, COLLECTOR CURRENT (mA) 500 1000 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IB, BASE CURRENT (mA) 10 20 50 100 Figure 2. Collector Saturation Region http://onsemi.com 2 MPSW01, MPSW01A qVB , TEMPERATURE COEFFICIENT (mV/° C) 1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 -0.8 0.8 V, VOLTAGE (VOLTS) -1.2 0.6 VBE(on) @ VCE = 1.0 V -1.6 qVB FOR VBE -2.0 0.4 0.2 0 1.0 2.0 VCE(sat) @ IC/IB = 10 -2.4 -2.8 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 80 TJ = 25°C 60 100 70 50 VCE = 10 V TJ = 25°C f = 20 MHz 10 20 50 100 200 1000 40 Cibo 20 Cobo Cobo Cibo 5.0 1.0 10 2.0 15 3.0 20 4.0 25 5.0 30 IC, COLLECTOR CURRENT (mA) 0 Figure 5. Current Gain — Bandwidth Product VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 1k IC , COLLECTOR CURRENT (mA) 1.0 s 500 1.0 ms 100 ms 200 100 50 TA = 25°C TC = 25°C DUTY CYCLE ≤ 10% CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW01 MPSW01A 2.0 5.0 10 20 30 40 20 10 1.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Active Region — Safe Operating Area http://onsemi.com 3 MPSW01, MPSW01A PACKAGE DIMENSIONS TO−92 (TO−226AE) CASE 29−10 ISSUE AL A B P F SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --- R L K DIM A B C D F G H J K L N P R XX G H R 123 D J SECTION X−X NC N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 MPSW01/D