MPSW01ARLRPG

MPSW01, MPSW01A One Watt High Current Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Symbol MPSW01 MPSW01A MPSW01 MPSW01A Emitter −Base Voltage VCEO VCBO Value Unit Vdc 30 40 5.0 Vdc Collector Current − Continuous IC 1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic 1 EMITTER Vdc 40 50 VEBO Operating and Storage Junction Temperature Range 2 BASE Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 12 1 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 MARKING DIAGRAM MPS W01x AYWW G G x = 01A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 6 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MPSW01/D MPSW01, MPSW01A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 30 40 − − 40 50 − − 5.0 − − − 0.1 0.1 − 0.1 55 60 50 − − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) MPSW01 MPSW01A Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MPSW01 MPSW01A V(BR)CEO V(BR)CBO V(BR)EBO Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) MPSW01 MPSW01A Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) VCE(sat) − 0.5 Vdc Base−Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc fT 50 − MHz Cobo − 20 pF SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping† TO−92 5000 Units / Bulk MPSW01G TO−92 (Pb−Free) 5000 Units / Bulk MPSW01AG TO−92 (Pb−Free) 5000 Units / Bulk MPSW01ARLRAG TO−92 (Pb−Free) 2000 / Tape & Reel MPSW01ARLRPG TO−92 (Pb−Free) 2000 / Tape & Ammo Box Device MPSW01 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) 300 h FE , CURRENT GAIN 200 100 70 VCE = 1.0 V TJ = 25°C 50 30 10 20 50 200 100 IC, COLLECTOR CURRENT (mA) 500 1000 Figure 1. DC Current Gain TJ = 25°C 0.8 0.6 IC = 1000 mA 0.4 0.2 IC = 10 mA IC = 50 mA IC = IC = 500 mA IC = 250 mA 100 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IB, BASE CURRENT (mA) 10 20 Figure 2. Collector Saturation Region http://onsemi.com 2 50 100 1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) qVB , TEMPERATURE COEFFICIENT (mV/° C) MPSW01, MPSW01A VBE(on) @ VCE = 1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 5.0 10 20 -1.2 -1.6 qVB FOR VBE -2.0 -2.4 -2.8 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient 80 300 TJ = 25°C 200 70 VCE = 10 V TJ = 25°C f = 20 MHz 50 60 C, CAPACITANCE (pF) 100 40 Cibo 20 Cobo 0 30 10 20 50 200 100 1000 Cobo Cibo IC, COLLECTOR CURRENT (mA) 5.0 1.0 10 2.0 Figure 6. Capacitance 1k 1.0 ms 100 ms 1.0 s 500 200 TA = 25°C 100 TC = 25°C DUTY CYCLE ≤ 10% CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 50 20 10 1.0 MPSW01 MPSW01A 2.0 5.0 15 3.0 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current Gain — Bandwidth Product IC , COLLECTOR CURRENT (mA) f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 1.0 2.0 -0.8 10 20 30 40 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Active Region — Safe Operating Area http://onsemi.com 3 20 4.0 25 5.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE D SCALE 1:1 12 3 STRAIGHT LEAD 1 DATE 05 MAR 2021 2 3 BENT LEAD STYLES AND MARKING ON PAGE 3 DOCUMENT NUMBER: DESCRIPTION: 98AON52857E TO−92 (TO−226) 1 WATT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE D DATE 05 MAR 2021 STYLES AND MARKING ON PAGE 3 DOCUMENT NUMBER: DESCRIPTION: 98AON52857E TO−92 (TO−226) 1 WATT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE D DATE 05 MAR 2021 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER STYLE 18: PIN 1. ANODE 2. CATHODE 3. NOT CONNECTED STYLE 19: PIN 1. GATE 2. ANODE 3. CATHODE STYLE 20: PIN 1. NOT CONNECTED 2. CATHODE 3. ANODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 24: PIN 1. EMITTER 2. COLLECTOR/ANODE 3. CATHODE STYLE 25: PIN 1. MT 1 2. GATE 3. MT 2 STYLE 26: PIN 1. 2. 3. STYLE 27: PIN 1. MT 2. SUBSTRATE 3. MT STYLE 28: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 29: PIN 1. NOT CONNECTED 2. ANODE 3. CATHODE STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE STYLE 32: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 33: PIN 1. RETURN 2. INPUT 3. OUTPUT STYLE 34: PIN 1. INPUT 2. GROUND 3. LOGIC STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER VCC GROUND 2 OUTPUT STYLE 31: PIN 1. GATE 2. DRAIN 3. SOURCE GENERIC MARKING DIAGRAM* XXXXX XXXXX ALYWG G XXXX A L Y W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON52857E TO−92 (TO−226) 1 WATT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 3 OF 3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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