MPSW06RLRA

MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 2 BASE Symbol MPSW05 MPSW06 MPSW05 MPSW06 VCEO VCBO VEBO IC PD PD TJ, Tstg Value 60 80 60 80 4.0 500 1.0 8.0 2.5 20 −55 to +150 Unit Vdc Vdc Vdc mAdc W mW/°C W mW/°C °C 12 1 2 TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 1 EMITTER • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM MPS W0x AYWW G G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. x = 5 or 6 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPSW05G MPSW06G MPSW06RLRA MPSW06RLRAG Package TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping† 5000 Units/Bulk 5000 Units/Bulk 2000/Tape & Reel 2000/Tape & Reel *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. August, 2010 − Rev. 4 1 Publication Order Number: MPSW05/D MPSW05, MPSW06 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Emitter − Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 250 mAdc, VCE = 1.0 Vdc) Collector − Emitter Saturation Voltage (IC = 250 mAdc, IB = 10 mAdc) Base−Emitter Saturation Voltage (IC = 250 mAdc, VCE = 5.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 400 TJ = 125°C hFE , DC CURRENT GAIN 200 25°C -55°C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 fT Cobo 50 − − 12 MHz pF hFE 80 60 − − − − 0.4 1.2 − MPSW05 MPSW06 MPSW05 MPSW06 MPSW05 MPSW06 V(BR)CEO 60 80 4.0 − − − Vdc Symbol Min Max Unit V(BR)EBO ICES Vdc mAdc − − − − − 0.5 0.5 0.1 0.1 0.1 ICBO mAdc IEBO mAdc VCE(sat) VBE(sat) Vdc Vdc VCE = 1.0 V Figure 1. DC Current Gain http://onsemi.com 2 MPSW05, MPSW06 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 1.0 TJ = 25°C 0.6 0.4 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.05 0.1 0.2 0.5 2.0 5.0 1.0 IB, BASE CURRENT (mA) 10 20 50 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 Figure 2. Collector Saturation Region Figure 3. “On” Voltages θ VB, TEMPERATURE COEFFICIENT (mV/°C) -0.8 -1.2 C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25°C -1.6 θVB for VBE 20 -2.0 -2.4 10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 -2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 500 4.0 0.1 Figure 4. Base−Emitter Temperature Coefficient f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Figure 5. Capacitance 300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25°C DUTY CYCLE ≤ 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25°C TC = 25°C 1.0 s 1.0 ms 100 ms 100 70 50 dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW05 MPSW06 2.0 5.0 10 20 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Current−Gain − Bandwidth Product Figure 7. Active Region − Safe Operating Area http://onsemi.com 3 MPSW05, MPSW06 PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A B P F L K STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI­ MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- R XX H V 1 D G J C N N SECTION X−X STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A R B P T SEATING PLANE BENT LEAD TAPE & REEL AMMO PACK K NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- G XX V 1 D J C N SECTION X−X ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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