MPSW13RLRAG

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Other names and brands may be claimed as the property of others. MPSW13 One Watt Darlington Transistor NPN Silicon http://onsemi.com Features • Pb−Free Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 10 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range BASE 2 EMITTER 1 1 2 TO−92 (TO−226) CASE 29−10 STYLE 1 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPS W13 AYWW G G MPSW13 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping † MPSW13RLRA TO−92 2,000/Tape & Reel TO−92 (Pb−Free) 2,000/Tape & Reel MPSW13RLRAG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 4 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPSW13/D MPSW13 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CES 30 − Vdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO − 100 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO − 100 nAdc 5,000 10,000 − − OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) − 1.5 Vdc Base−Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) − 2.0 Vdc fT 125 − MHz − SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) I C , COLLECTOR CURRENT (mA) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| • ftest. CURRENT LIMIT DUTY CYCLE ≤ 10% THERMAL LIMIT SECOND BREAKDOWN LIMIT 3.0 k 2.0 k 100 ms 1.0 ms 1.0 k 1.0 s 500 200 1.5 TA = 25°C TC = 25°C 2.0 5.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. Active Region − Safe Operating Area http://onsemi.com 2 30 200 k TJ = 125°C h FE , DC CURRENT GAIN 100 k 70 k 50 k 25°C 30 k 20 k 10 k 7.0 k 5.0 k −55°C VCE = 5.0 V 3.0 k 2.0 k 5.0 7.0 10 20 50 70 100 30 200 300 500 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) MPSW13 3.0 IC = 50 mA IC = 10 mA 2.5 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 q V , TEMPERATURE COEFFICIENTS (mV/° C) TJ = 25°C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 200 300 70 100 500 −1.0 *APPLIES FOR IC/IB ≤ hFE/3.0 −2.0 100 200 500 1000 25°C TO 125°C −55°C TO 25°C −3.0 25°C TO 125°C −4.0 qVB FOR VBE −5.0 −6.0 −55°C TO 25°C 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 4. “ON” Voltages Figure 5. Temperature Coefficients 4.0 20 VCE = 5.0 V TJ = 25°C f = 100 MHz 2.0 TJ = 25°C C, CAPACITANCE (pF) h FE , SMALL−SIGNAL CURRENT GAIN 50 *qVC FOR VCE(sat) IC, COLLECTOR CURRENT (mA) 1.0 0.8 0.6 0.4 0.2 20 Figure 3. Collector Saturation Region 1.6 0.6 5.0 10 IB, BASE CURRENT (mA) Figure 2. DC Current Gain 0.8 TJ = 25°C 2.0 IC, COLLECTOR CURRENT (mA) 1.0 IC = 500 mA IC = 250 mA 10 7.0 Cibo 5.0 Cobo 3.0 0.5 1.0 2.0 5.0 10 20 50 100 200 500 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 6. High Frequency Current Gain Figure 7. Capacitance http://onsemi.com 3 10 20 40 MPSW13 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. A B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X−X N INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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