MPSW3725

MPSW3725 MPSW3725 C TO-226 B E NPN Transistor This device is designed for high current, low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 1.2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient  1999 Fairchild Semiconductor Corporation Max Units MPSW3725 1.0 8.0 125 W mW/°C °C/W 50 °C/W (continued) Electrical Characteristics Symbol TA= 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO IC = 10 mA, IB = 0 40 V IC = 10 µA, VBE = 0 60 V V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage IC = 100 µA, ICE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 ICBO Collector Cutoff Current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 100°C V(BR)CES V 100 10 nA µA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC=100mA,VCE=1.0V,TA=-55°C IC = 300 mA, VCE = 1.0 V IC = 500 mA, VCE = 1.0 V IC=500mA,VCE=1.0V,TA=-55°C IC = 800 mA, VCE = 2.0 V IC = 1.0 A, VCE = 5.0 V IC = 10 mA, IB = 1.0 mA IC = 100 mA, IB = 10 mA IC = 300 mA, IB = 30 mA IC = 500 mA, IB = 50 mA IC = 800 mA, IB = 80 mA IC = 1.0 A, IB = 100 mA IC = 10 mA, IB = 1.0 mA IC = 100 mA, IB = 10 mA IC = 300 mA, IB = 30 mA IC = 500 mA, IB = 50 mA IC = 800 mA, IB = 80 mA IC = 1.0 A, IB = 100 mA 30 60 30 40 35 20 20 25 180 0.25 0.26 0.4 0.52 0.8 0.95 0.76 0.86 1.1 1.2 1.5 1.7 V V V V V V V V V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance IC = 50 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz 250 MHz 25 pF 100 pF SWITCHING CHARACTERISTICS ton Turn-on Time VCC = 30 V, VBE = 3.8 V, 22 ns td Delay Time IC = 500 mA, IB1 = 50 mA 10 ns tr Rise Time toff Turn-off Time ts Storage Time tf Fall Time *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% 12 ns VCC = 30 V, IC = 500mA 250 ns IB1 = IB2 = 50 mA 235 ns 15 ns MPSW3725 NPN Transistor (continued) 200 VCESAT- COLLE CTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VCE = 1.0V 150 125 °C 100 25 °C - 40 °C 50 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 V BESAT- BASE- EMITTER VOLTAGE( V) Base-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 0.2 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 V BE(O N)- BASE-EMITTER ON VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 0.3 125 °C 0.2 25 °C 0.1 - 40 °C 0 1 10 100 I C - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current V CE = 1.0V 0.8 - 40 °C 0.6 25 °C 0.4 125 °C 0.2 0.1 25 150 100 100 50 10 1 50 75 100 125 T A - AM BIENT TE MPE RATURE (° C) F = 1 MHz 100 V CB = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) 1 10 I C - COLLECTOR CURRENT (mA) Input / Output Capacitance vs Reverse Bias Collector-Cutoff Current vs Ambient Temperature 0.1 25 1000 150 C ibo 50 10 25 5 1 0.1 C obo 1 10 REVERSE BIAS VOLTAGE (V) 50 MPSW3725 NPN Transistor (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature 1 10 PD - POWER DISSIPATION (W) V CE - COLLECTOR VOLTAGE (V) Contours of Constant Bandwidth Product (f T) 450 MHz 400 MHz 1 350 MHz 250 MHz 100 MHz 0.1 10 50 100 500 I C - COLLECTOR CURRENT (mA) 1000 0.75 TO-226 0.5 0.25 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 MPSW3725 NPN Transistor (continued) Storage Time vs. Turn On and Turn Off Base Currents 300 t s = 20 ns 200 35 ns 45 ns 100 I C = 800 mA VCC = 30V 0 0 100 200 I B1 - TURN ON BASE CURRENT (mA) 300 I B2 - TURN OFF BASE CURRENT (mA) (continued) Storage Time vs. Turn On and Turn Off Base Currents 200 I C = 500 mA VCC = 30V 150 100 40 t s = 20 ns 30 40 ns 60 ns 10 0 80 ns I C = 100 mA VCC = 30V 0 10 20 30 40 IB1 - TURN ON BASE CURRENT (mA) 50 ns 40 ns 50 0 0 50 100 150 I B1 - TURN ON BASE CURRENT (mA) 200 Rise Time vs. Collector and Turn On Base Currents 50 20 25 ns t s = 20 ns Storage Time vs. Turn On and Turn Off Base Currents 50 I B1 - TURN ON BASE CURRENT (mA) I B2- TURN OFF BASE CURRENT (mA) I B2- TURN OFF BASE CURRENT (mA) Typical Characteristics 100 t r = 3 ns 50 5 ns 40 30 8 ns 20 15 ns 10 50 VCC = 30V 100 200 300 I C - COLLECTOR CURRENT (mA) 400 500 MPSW3725 NPN Transistor (continued) (continued) I B2 - TURN OFF BASE CURRENT (mA) Fall Time vs. Turn On and Turn Off Base Currents 200 t f = 5 ns 6 ns 150 7 ns 100 10 ns 50 50 100 150 I B1 - TURN ON BASE CURRENT (mA) TURN OFF BASE CURRENT (mA) 0 B2- 0 I C = 500 mA VCC = 30V I I B2- TURN OFF BASE CURRENT (mA) Typical Characteristics 200 Fall Time vs. Turn On and Turn Off Base Currents 300 I C = 800 mA VCC = 30V 200 t f = 10 ns 15 ns 100 20 ns 0 0 100 200 I B1 - TURN ON BASE CURRENT (mA) Fall Time vs. Turn On and Turn Off Base Currents 50 I C = 100 mA VCC = 30V 40 t f = 12 ns 30 15 ns 20 30 ns 10 0 0 10 20 30 40 I B1 - TURN ON BASE CURRENT (mA) 50 300 MPSW3725 NPN Transistor (continued) Test Circuit - 3.8 V 30 V 15 Ω VIN = 9.7 V tr and tf ≤ 1 ns PW = 1.0 µs ZIN = 50 Ω Duty Cycle < 2% VOUT Ω 1.0 KΩ 1.0 µF 43 Ω 10 µF VIN 100 Ω 62 Ω FIGURE 1: Switching Time Test Circuit (IC = 500 mA, IB1 = 50 mA, IB2 = 50 mA) To sampling scope tr < 1.0 ns ZIN ≥ 100 KΩ MPSW3725 NPN Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G