MPSW42RLRA

MPSW42 One Watt High Voltage Transistor NPN Silicon Features http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 300 300 6.0 500 1.0 8.0 2.5 20 −55 to +150 Unit Vdc Vdc Vdc mAdc W mW/°C W mW/°C °C 12 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PACK 2 TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 MARKING DIAGRAM MPS W42 AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPSW42 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPSW42 MPSW42G MPSW42RLRA MPSW42RLRAG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping† 5000 Units/Box 5000 Units/Box 2000/Tape & Reel 2000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPSW42/D © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 7 1 MPSW42 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT Ccb 50 − − 3.0 MHz pF hFE 25 40 40 − − − − − 0.5 0.9 − V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 6.0 − − − − − 0.1 0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Max Unit VCE(sat) VBE(sat) Vdc Vdc http://onsemi.com 2 MPSW42 120 100 hFE , DC CURRENT GAIN 80 60 40 -55°C 20 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 25°C TJ = +125°C VCE = 10 Vdc Figure 1. DC Current Gain 100 Ceb @ 1MHz C, CAPACITANCE (pF) 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. ”ON” Voltages http://onsemi.com 3 MPSW42 PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A B P F L K STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI­ MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- R XX H V 1 D G J C N N SECTION X−X STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A R B P T SEATING PLANE BENT LEAD TAPE & REEL AMMO PACK K NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- G XX V 1 D J C N SECTION X−X ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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