MPSW51A

ON Semiconductort One Watt High Current Transistors PNP Silicon w These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range MPSW51 MPSW51A MPSW51 MPSW51A Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value −30 −40 −40 −50 −5.0 −1000 1.0 8.0 2.5 20 − 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C Watts mW/°C °C MPSW51 MPSW51A* *ON Semiconductor Preferred Device MAXIMUM RATINGS 1 2 3 CASE 29−10, STYLE 1 TO−92 (TO−226AE) COLLECTOR 3 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage(1) (IC = −1.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −100 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector Cutoff Current (VCB = −30 Vdc, IE = 0) (VCB = −40 Vdc, IE = 0) Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. MPSW51 MPSW51A MPSW51 MPSW51A V(BR)CEO Vdc −30 −40 −40 −50 −5.0 — — Vdc — — — Vdc μAdc V(BR)CBO V(BR)EBO ICBO MPSW51 MPSW51A — — — −0.1 −0.1 −0.1 IEBO μAdc © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: MPSW51/D MPSW51 MPSW51A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) (IC = −1000 mAdc, VCE = −1.0 Vdc) Collector − Emitter Saturation Voltage (IC = −1000 mAdc, IB = −100 mAdc) Base − Emitter On Voltage (IC = −1000 mAdc, VCE = −1.0 Vdc) hFE — 55 60 50 — — — — — −0.7 −1.2 Vdc Vdc VCE(sat) VBE(on) SMALL− SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) fT Cobo 50 — — 30 MHz pF 200 VCE , COLLECTOR VOLTAGE (VOLTS) −1.0 −0.8 −0.6 −0.4 −0.2 TJ = 25°C 0 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 IB, BASE CURRENT (mA) IC = −10 mA IC = −50 mA IC = IC = IC = IC = −100 −250 −500 mA −1000 mA mA mA h FE , CURRENT GAIN 100 70 50 VCE = −1.0 V TJ = 25°C 20 −10 −20 −50 −100 −200 −500 −1000 −50 −100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector Saturation Region TJ = 25°C −0.8 V, VOLTAGE (VOLTS) −0.6 −0.4 −0.2 VBE(SAT) @ IC/IB = 10 qV B, TEMPERATURE COEFFICIENT (mV/ °C) −1.0 −0.8 −1.2 −1.6 qVB for VBE VBE(ON) @ VCE = −1.0 V −2.0 −2.4 −2.8 −1.0 −2.0 VCE(SAT) @ IC/IB = 10 −5.0 −10 −20 −50 −100 −200 0 −1.0 −2.0 −500 −1000 −5.0 −10 −20 −50 −100 −200 −500 −1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient http://onsemi.com 2 MPSW51 MPSW51A f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 160 TJ = 25°C 120 100 70 50 30 −10 VCE = −10 V TJ = 25°C f = 20 MHz 80 Cibo 40 Cobo −20 −50 −100 −200 −500 −1000 0 IC, COLLECTOR CURRENT (mA) Cobo Cibo −5.0 −1.0 −20 −10 −15 −2.0 −3.0 −4.0 VR, REVERSE VOLTAGE (VOLTS) −25 −5.0 Figure 5. Current Gain — Bandwidth Product Figure 6. Capacitance −1.0 k I C , COLLECTOR CURRENT (mA) −500 −200 −100 −50 −20 −10 −1.0 −2.0 TA = 25°C TC = 25°C 1.0 ms 1.0 ms 100 ms DUTY CYCLE ≤ 10% MPSW51 MPSW51A CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −5.0 −10 −20 −30 −40 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area http://onsemi.com 3 MPSW51 MPSW51A PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL A B P F SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− R L K XX G H R 123 D J SECTION X−X NC N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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