MPSW63RLRA

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ON Semiconductort MPSW63 MPSW64 * One Watt Darlington Transistors PNP Silicon w *ON Semiconductor Preferred Device These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. MAXIMUM RATINGS 1 Symbol MPSW63 MPSW64 Unit Collector −Emitter Voltage VCES −30 Vdc Collector −Base Voltage VCBO −30 Vdc Emitter −Base Voltage Rating VEBO −10 Vdc Collector Current — Continuous IC −500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watt mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg −55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W Operating and Storage Junction Temperature Range 2 3 CASE 29−10, STYLE 1 TO−92 (TO−226AE) COLLECTOR 3 BASE 2 THERMAL CHARACTERISTICS Characteristic EMITTER 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)CES −30 — Vdc Collector Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO — −100 nAdc Emitter Cutoff Current (VEB = −10 Vdc, IC = 0) IEBO — −100 nAdc Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −100 μAdc, VBE = 0) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: MPSW63/D MPSW63 MPSW64 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max 5,000 10,000 — — 10,000 20,000 — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = −10 mAdc, VCE = −5.0 Vdc) hFE MPSW63 MPSW64 (IC = −100 mAdc, VCE = −5.0 Vdc) — MPSW63 MPSW64 Collector−Emitter Saturation Voltage (IC = −100 mAdc, IB = −0.1 mAdc) VCE(sat) — −1.5 Vdc Base−Emitter On Voltage (IC = −100 mAdc, VCE = −5.0 Vdc) VBE(on) — −2.0 Vdc fT 125 — MHz SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product(2) (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| • ftest. TYPICAL ELECTRICAL CHARACTERISTICS h FE, DC CURRENT GAIN (X1.0 k) 200 TJ = 125°C 100 70 50 −10 V 25°C 30 VCE = −2.0 V 20 −5.0 V 10 7.0 5.0 3.0 2.0 −0.3 −55°C −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 IC, COLLECTOR CURRENT (mA) −2.0 TJ = 25°C V, VOLTAGE (VOLTS) −1.6 VBE(sat) @ IC/IB = 100 −1.2 −0.8 VBE(on) @ VCE = −5.0 V VCE(sat) @ IC/IB = 1000 IC/IB = 100 −0.4 0 −0.3 −0.5 −1.0 −3.0 −5.0 −10 −30 −50 −100 −300 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain −2.0 TJ = 25°C −1.8 −1.6 −50 mA −100 mA −175 mA −1.4 −300 mA −1.2 −1.0 −0.8 IC = −10 mA −0.6 −0.1 −0.3 −1.0 −3.0 −10 −30 −100 −300 −1 k −3 k −10 k IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 2. “ON” Voltage Figure 3. Collector Saturation Region http://onsemi.com 2 *APPLIES FOR IC/IB ≤ hFE/100 +3.0 +25°C TO +125°C +2.0 +1.0 −50°C TO +25°C 0 −1.0 −2.0 *RqVC FOR VCE(sat) −3.0 −4.0 −50°C TO +25°C RqVB FOR VBE −5.0 −0.3 −0.5 −1.0 20 15 C, CAPACITANCE (pF) f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) +5.0 +4.0 10 +25°C TO +125°C −2.0 −5.0 −10 −50 −100 −20 −300 VCE = −20 V 200 100 −10 V 60 −5.0 V 40 30 20 −0.3 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −300 Figure 4. Temperature Coefficients Figure 5. Current−Gain — Bandwidth Product −2 k Cibo 7.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −1 k 100 ms 1.0 mS −500 TJ = 25°C f = 1.0 MHz 1.0 s −0.5 −1.0 −2.0 −5.0 −10 DUTY CYCLE ≤ 10% −100 −1.5 −2.0 −20 −30 TC = 25°C TA = 25°C −200 3.0 2.0 −0.1 −0.2 TJ = 25°C 400 300 IC, COLLECTOR CURRENT (mA) Cobo 5.0 600 IC, COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA) R qV , TEMPERATURE COEFFICIENT (mV/ °C) MPSW63 MPSW64 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance Figure 7. Active Region, Safe Operating Area http://onsemi.com 3 −30 MPSW63 MPSW64 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P F SEATING PLANE L K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X−X N INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− YLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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