ON Semiconductort
One Watt Darlington Transistors
PNP Silicon
w
These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
MPSW63 MPSW64 *
*ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSW63 MPSW64 −30 −30 −10 −500 1.0 8.0 2.5 20 − 55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C
1
2
3
CASE 29−10, STYLE 1 TO−92 (TO−226AE)
COLLECTOR 3 BASE 2
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W EMITTER 1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (IC = −100 μAdc, VBE = 0) Collector Cutoff Current (VCB = −30 Vdc, IE = 0) Emitter Cutoff Current (VEB = −10 Vdc, IC = 0) V(BR)CES ICBO IEBO −30 — — — −100 −100 Vdc nAdc nAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number: MPSW63/D
MPSW63 MPSW64
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −100 mAdc, VCE = −5.0 Vdc) Collector−Emitter Saturation Voltage (IC = −100 mAdc, IB = −0.1 mAdc) Base−Emitter On Voltage (IC = −100 mAdc, VCE = −5.0 Vdc) MPSW63 MPSW64 MPSW63 MPSW64 VCE(sat) VBE(on) hFE — 5,000 10,000 10,000 20,000 — — — — — — −1.5 −2.0 Vdc Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product(2) (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| • ftest. fT 125 — MHz
TYPICAL ELECTRICAL CHARACTERISTICS
200 h FE, DC CURRENT GAIN (X1.0 k) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 −0.3 TJ = 125°C
25°C VCE = −2.0 V −5.0 V −55°C
−10 V
−0.5
−0.7
−1.0
−2.0
−3.0
−5.0
−7.0
−10
−20
−30
−50
−70
−100
−200
−300
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) −2.0 TJ = 25°C −1.6 V, VOLTAGE (VOLTS) −1.2 −0.8 −0.4 0 −0.3 −0.5 −1.0 VCE(sat) @ IC/IB = 1000 IC/IB = 100 VBE(sat) @ IC/IB = 100 VBE(on) @ VCE = −5.0 V −2.0 −1.8 −1.6 −1.4 −1.2 −1.0 −0.8 −0.6 −0.1 −0.3 IC = −10 mA −1.0 −3.0 −10 −30 −100 −300 −1 k −3 k −10 k −50 mA −100 mA −175 mA −300 mA
TJ = 25°C
−3.0 −5.0
−10
−30 −50 −100
−300
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 2. “ON” Voltage
Figure 3. Collector Saturation Region
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MPSW63 MPSW64
+4.0 +3.0 +2.0 +1.0 0 −1.0 −2.0 −3.0 −4.0 RqVB FOR VBE −2.0 −5.0 −10 −20 −5.0 −0.3 −0.5 −1.0 *RqVC FOR VCE(sat) −50°C TO +25°C +25°C TO +125°C −50 −100 −300 +25°C TO +125°C −50°C TO +25°C *APPLIES FOR IC/IB ≤ hFE/100 f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) R qV , TEMPERATURE COEFFICIENT (mV/ °C) +5.0 600 400 300 200 100 60 40 30 20 −0.3 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −300 −10 V −5.0 V TJ = 25°C VCE = −20 V
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
Figure 5. Current−Gain — Bandwidth Product
20 15 C, CAPACITANCE (pF) 10 7.0 5.0
Cobo IC , COLLECTOR CURRENT (mA) Cibo
−2 k
−1 k
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 mS
100 ms
−500 1.0 s TA = 25°C DUTY CYCLE ≤ 10% −5.0 −10 −20 −30 TC = 25°C
TJ = 25°C f = 1.0 MHz
3.0 2.0 −0.1 −0.2
−200
−0.5
−1.0
−2.0
−5.0
−10
−20 −30
−100 −1.5 −2.0
VR, REVERSE VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
Figure 7. Active Region, Safe Operating Area
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MPSW63 MPSW64
PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL
A B P F
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−−
R L
K
XX G H R
123
D J SECTION X−X
NC
N
YLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
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MPSW63/D
