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MR2520L_06

MR2520L_06

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    MR2520L_06 - Overvoltage Transient Suppressor - ON Semiconductor

  • 数据手册
  • 价格&库存
MR2520L_06 数据手册
MR2520L Overvoltage Transient Suppressor Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices operate in the forward mode as standard rectifiers or reverse mode as power avalanche rectifier and will protect electronic equipment from overvoltage conditions. Features http://onsemi.com • • • • High Power Capability Economical Increased Capacity by Parallel Operation Pb−Free Packages are Available* OVERVOLTAGE TRANSIENT SUPPRESSOR 24 − 32 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Maximum Lead Temperature for Soldering Purposes: • 350°C 3/8″ from Case for 10 Seconds at 5 lbs. Tension Polarity: Indicated by Diode Symbol or Cathode Band MICRODE AXIAL CASE 194 STYLE 1 Unit V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating DC Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Repetitive Peak Reverse Surge Current (Time Constant = 10 ms, Duty Cycle ≤ 1%, TC = 25°C) Peak Reverse Power (Time Constant = 10 ms, Duty Cycle ≤ 1%, TC = 25°C) Average Rectified Forward Current , (Single Phase, Resistive Load, 60 Hz, TC = 125°C) (See Figure 4) Non−Repetitive Peak Surge Current, Surge Supplied at Rated Load Conditions Halfwave, Single Phase Operating and Storage Junction Temperature Range Symbol VRRM VRWM VR IRSM Value 23 MARKING DIAGRAM 58 A MR2520LAYYWW G G PRSM IO 2500 6.0 W A IFSM 400 A A YY WW G = Assembly Location = Year = Work Week = Pb−Free Package TJ, Tstg −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 June, 2006 − Rev. 3 Publication Order Number: MR2520L/D MR2520L THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead, Both Leads to Heat Sink with Equal Length Thermal Resistance Junction−to−Case Lead Length 6.25 mm 10 mm 15 mm − Symbol RqJL Max 7.5 10 15 1.0 Unit °C/W RqJC °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Instantaneous Forward Voltage (Note 1) (IF = 100 A, TC = 25°C) Instantaneous Forward Voltage (Note 1) (IF = 6.0 A, TC = 25°C) Reverse Current (VR = 20 Vdc, TC = 25°C) Reverse Current (VR = 20 Vdc, TC = 25°C) Breakdown Voltage (Note 1) (IR = 100 mAdc, TC = 25°C) Breakdown Voltage (Note 1) (IR = 90 A, TC = 150°C, PW = 80 ms) Dynamic Resistance (IR = 100 mA, TJ = 25°C, f = 1.0 kHz) Dynamic Resistance (IR = 40 mA, TJ = 25°C) Breakdown Voltage Temperature Coefficient Forward Voltage Temperature Coefficient @ IF = 10 mA 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. *Typical Symbol VF VF IR IR V(BR) V(BR) RZ RZ V(BR)TC VFTC Min − − − − 24 − − − − − Max 1.25 0.90 10 300 32 40 5.0 0.15 0.09* −2* Unit V V nAdc nAdc V V W W %/°C mV/°C ORDERING INFORMATION Device MR2520L MR2520LG MR2520LRL MR2520LRLG Package Microde Axial Microde Axial (Pb−Free) Microde Axial Microde Axial (Pb−Free) 800 / Tape & Reel 1000 / Box Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MR2520L IF, INSTANTANEOUS FORWARD CURRENT (A) IR, REVERSE CURRENT (NORMALIZED) 1000 104 VR = 20 V 103 100 102 10 TJ = 150°C 1.0 500 600 700 100°C 800 25°C 900 1000 1100 101 100 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 1. Forward Voltage IF(avg), AVERAGE FORWARD CURRENT (A) 4000 3500 C, CAPACITANCE (pF) 3000 2500 2000 1500 1000 0 5 10 15 20 25 VR, REVERSE VOLTAGE (V) 25 Figure 2. Normalized Reverse Current 20 Both leads to heatsink with equal length IF(peak)/IF(avg) = p 15 10 mm L = 6.25 mm 10 15 mm 5 0 20 40 60 80 100 120 140 160 180 TL, LEAD TEMPERATURE (°C) Figure 3. Typical Capacitance 100 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) R qJL, THERMAL RESISTANCE JUNCTION TO LEAD ( ° C/W) 40 Figure 4. Maximum Current Ratings Maximum 35 30 25 20 15 10 5 0 10−3 10−2 10−1 100 101 102 0 5 t, TIME (S) Both leads to heatsink (equal length) 10 15 20 25 Typical Single to heatsink Maximum Typical 10−1 10−2 L = 6.25 mm, both leads to heatsink (equal length) LEAD LENGTH (mm) Figure 5. Thermal Response Figure 6. Steady State Thermal Resistance http://onsemi.com 3 MR2520L IRSM, PEAK REVERSE CURRENT (A) 100 TJ = 25°C 10000 PRSM, PEAK REVERSE POWER (W) TJ = 25°C 1000 10 1 10 100 1000 t, TIME CONSTANT (mS) 100 1 10 100 1000 t, TIME CONSTANT (mS) Figure 7. Maximum Peak Reverse Current 1000 W RSM, PEAK REVERSE ENERGY (J) PEAK REVERSE POWER (W) 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 25 Figure 8. Maximum Peak Reverse Power TJ = 25°C 100 Time Constant = 10 mS Time Constant = 100 mS 10 1 1 10 100 1000 t, TIME CONSTANT (mS) 50 75 100 125 150 TL, LEAD TEMPERATURE (°C) Figure 9. Maximum Reverse Energy 1.20 1.18 f, FREQUENCY (HERTZ) V Z(Irsm) /V Z(100 mA) 1.16 1.14 1.12 1.10 1.08 1.06 1.04 1.02 1.00 10 20 30 40 50 60 70 80 90 100 110 120 IRSM, REPETITIVE PEAK REVERSE SURGE CURRENT (A) PW = 80 mS, TL = 25°C 100 Figure 10. Reverse Power Derating 1−5 mm (Both leads to heat sink) 10−1 10−2 1−20 mm (Both leads to heat sink) 10−3 1 10 100 1000 TIME CONSTANT (ms) Figure 11. Typical Clamping Factor Figure 12. Maximum Load Dump Frequency http://onsemi.com 4 MR2520L 2W dl/dt Limitation 100 mH 0 − 150 V 50 mF MR2532L Figure 13. Load Dump Test Circuit 100 dl/dt < 1 A/ms 80 60 (%) 40 20 0 0 0.1 t (50%) t (37%) 0.2 t (10%) t, TIME (S) 0.3 0.5 0.4 t (37%) = Time Constant t (50%) = 0.7 t (37%) t (10%) = 2.3 t (37%) Figure 14. Load Dump Pulse Current http://onsemi.com 5 MR2520L PACKAGE DIMENSIONS MICRODE AXIAL CASE 194−04 ISSUE H A D 1 NOTES: 1. CATHODE SYMBOL ON PACKAGE. 2. 194−01 OBSOLETE, 194−04 NEW STANDARD. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 8.43 8.69 0.332 0.342 B 5.94 6.25 0.234 0.246 D 1.27 1.35 0.050 0.053 K 25.15 25.65 0.990 1.010 STYLE 1: PIN 1. CATHODE 2. ANODE K B K 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MR2520L/D
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