MRS1504T3

MRS1504T3G, NRVS1504T3G Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • • • • • http://onsemi.com STANDARD RECOVERY RECTIFIER 1.5 AMPERES, 400 VOLTS Compact Package with J−Bend Leads Ideal for Automated Handling Stable, High Temperature, Glass Passivated Junction AEC−Q101 Qualified and PPAP Capable NRVS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb-Free* SMB CASE 403A PLASTIC Mechanical Characteristics: • • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Maximum Temperature of 260°C / 10 Seconds for Soldering Polarity: Notch and/or Band in Plastic Body Indicates Cathode Lead ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3A MARKING DIAGRAM AYWW RGG G G A Y WW RGG G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MRS1504T3G SMB (Pb−Free) 2,500 / Tape & Reel NRVS1504T3G SMB (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 6 1 Publication Order Number: MRS1504T3/D MRS1504T3G, NRVS1504T3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 400 V Average Rectified Forward Current (At Rated VR, TI = 118°C) IO Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TI = 118°C) IFRM Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM Storage/Operating Case Temperature Range A 1.5 A 3.0 A 50 Tstg, TC −55 to 150 °C TJ −55 to 150 °C Operating Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 1) Rating Rtjl 18 °C/W Thermal Resistance, Junction−to−Ambient (on 1″ sq. Cu. PCB pattern) Rtja 79 °C/W 1. Minimum pad size. ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 2), see Figure 2 (IF = 1.5 A) (IF = 2.25 A) VF Maximum Instantaneous Reverse Current, see Figure 4 (VR = 400 V) (VR = 200 V) IR 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0% http://onsemi.com 2 TJ = 25_C TJ = 100_C 1.04 1.10 0.96 1.02 1.0 0.5 340 180 Unit V mA MRS1504T3G, NRVS1504T3G IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 100 10 TJ = 100°C TJ = 150°C 1.0 TJ = 25°C TJ = -40°C 0.1 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1.6 100 10 TJ = 100°C 1.0 TJ = 25°C 0.1 0.6 0.8 1.0 1.2 1.4 1.6 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage I R, MAXIMUM REVERSE CURRENT (AMPS) I R, REVERSE CURRENT (AMPS) 100E-6 10E-6 TJ = 150°C TJ = 100°C 10E-3 TJ = 150°C 1.0E-3 TJ = 100°C 100E-6 1.0E-6 100E-9 TJ = 25°C 10E-9 TJ = 150°C 10E-6 1.0E-6 TJ = 25°C 100E-9 1.0E-9 0 10E-9 400 100 200 300 VR, REVERSE VOLTAGE (VOLTS) 0 2.5 dc FREQ = 20 kHz 2.0 SQUARE WAVE 1.5 Ipk/Io = p Ipk/Io = 5 1.0 Ipk/Io = 10 Ipk/Io = 20 0.5 0 0 20 40 60 80 100 120 TL, LEAD TEMPERATURE (°C) 140 400 Figure 4. Maximum Reverse Current PFO , AVERAGE POWER DISSIPATION (WATTS) I O , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Reverse Current 100 200 300 VR, REVERSE VOLTAGE (VOLTS) 160 2.5 dc 2.0 SQUARE WAVE Ipk/Io = p Ipk/Io = 5 1.5 Ipk/Io = 10 1.0 Ipk/Io = 20 0.5 0 0 Figure 5. Current Derating 0.5 1.0 1.5 2.0 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation http://onsemi.com 3 2.5 MRS1504T3G, NRVS1504T3G 100 C, CAPACITANCE (pF) TJ = 25°C 10 1.0 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (VOLTS) 70 80 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED Figure 7. Capacitance 1.0 50% 20% 10% 0.1 5.0% 2.0% 0.01 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 T, TIME (s) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Thermal Response, Junction−to−Lead 1.0 50% 20% 0.1 10% 5.0% 2.0% 0.01 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 T, TIME (s) Figure 9. Thermal Response, Junction−to−Ambient http://onsemi.com 4 10 100 1,000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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