MSB709−RT1
Preferred Device
PNP General Purpose
Amplifier Transistor
Surface Mount
Features
http://onsemi.com
• Pb−Free Package is Available
COLLECTOR
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector − Base Voltage
V(BR)CBO
−60
Vdc
Collector − Emitter Voltage
V(BR)CEO
−45
Vdc
Emitter − Base Voltage
V(BR)EBO
−7.0
Vdc
IC
−100
mAdc
IC(P)
−200
mAdc
Symbol
Max
Unit
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 ~ +150
°C
Collector Current − Continuous
Collector Current − Peak
2
BASE
1
EMITTER
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
3
2
1
SC−59
CASE 318D
AR M G
G
AR
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 6
1
Publication Order Number:
MSB709−RT1/D
MSB709−RT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Max
Unit
Collector − Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
−45
−
Vdc
Collector − Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
−60
−
Vdc
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IE = 0)
V(BR)EBO
−7.0
−
Vdc
Collector − Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
−
−0.1
mAdc
Collector − Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
ICEO
−
−100
nAdc
DC Current Gain (Note 1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
hFE1
210
340
−
Collector − Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
−
−0.5
Vdc
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ORDERING INFORMATION
Package
Shipping †
SC−59
3000 Units / Reel
SC−59
(Pb−Free)
3000 Units / Reel
Device
MSB−709RT1
MSB−709RT1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
DATE 28 JUN 2012
SCALE 2:1
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
E
2
b
e
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
C
A
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
XXX MG
G
SOLDERING FOOTPRINT*
1
0.95
0.037
0.95
0.037
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
GENERIC
MARKING DIAGRAM
L
A1
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
XXX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package*
(*Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42664B
SC−59
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. N.C.
3. ANODE
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE/CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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