MSB92ASWT1

MSB92ASWT1G, MSB92AS1WT1G PNP Silicon General Purpose High Voltage Transistor www.onsemi.com This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector-Base Voltage V(BR)CBO −300 Vdc Collector-Emitter Voltage V(BR)CEO −300 Vdc Emitter-Base Voltage V(BR)EBO −5.0 Vdc IC 500 mAdc ESD Class 1C Class C − Rating Collector Current − Continuous ESD Rating: Human Body Model Machine Model 3 1 2 SC−70 (SOT−323) CASE 419 STYLE 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Rating Power Dissipation (Note 1) 2 EMITTER Symbol Max Unit PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. D3 M G G D5 M G G 1 1 MSB92ASWT1G Dx M G MSB92AS1WT1G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MSB92ASWT1G SC−70 (Pb−Free) 3000/Tape & Reel MSB92AS1WT1G SC−70 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 June, 2017 − Rev. 6 1 Publication Order Number: MSB92ASWT1/D MSB92ASWT1G, MSB92AS1WT1G ELECTRICAL CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) Characteristic V(BR)CEO −300 − Vdc Collector-Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO −300 − Vdc Emitter-Base Breakdown Voltage (IE = −100 mAdc, IE = 0) V(BR)EBO −5.0 − Vdc Collector-Base Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO − −0.25 mA Emitter−Base Cutoff Current (VEB = −3.0 Vdc, IB = 0) IEBO − −0.1 mA hFE1 hFE2 hFE3 120 40 25 200 − − Collector-Emitter Saturation Voltage (Note 2) (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − −0.5 Vdc Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VBE(sat) − −0.9 Vdc fT 50 − MHz Ccb − 6.0 pF DC Current Gain (Note 2) (VCE = −10 Vdc, IC = −1.0 mAdc) (VCE = −10 Vdc, IC = −10 mAdc) (VCE = −10 Vdc, IC = −30 mAdc) − SMALL SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz) Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. www.onsemi.com 2 MSB92ASWT1G, MSB92AS1WT1G TYPICAL CHARACTERISTICS 0.7 VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) 400 hFE, DC CURRENT GAIN VCE = 5 V 150°C 300 200 25°C 100 −55°C 0 0.0001 0.001 0.01 0.1 0.3 25°C 0.2 0.1 −55°C 0 0.0001 0.001 −55°C 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.001 0.01 0.1 1.2 1.1 VCE = 5 V 1.0 −55°C 0.9 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 0.0001 0.001 IC, COLLECTOR CURRENT (A) 0.1 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 4. VBE(on) Curve 1000 VCE = 20 V TA = 25°C 100 10 1 0.01 IC, COLLECTOR CURRENT (A) Figure 3. VBE(sat) Curve fT, CURRENT−GAIN BANDWIDTH PRODUCT 0.1 Figure 2. VCE(sat) Curve 0.8 1 0.1 0.01 Figure 1. DC Current Gain VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) 0.4 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.2 0.0001 150°C 0.5 IC, COLLECTOR CURRENT (A) 1.0 0.9 IC/IB = 10 0.6 10 100 2.0 TA = 25°C 1.6 IC = 50 mA 1.2 IC = 10 mA 0.8 0.4 0.1 mA 0 0.0001 0.001 1.0 mA 0.01 0.1 1 10 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 5. Current−Gain Bandwidth Product Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 100 MSB92ASWT1G, MSB92AS1WT1G TYPICAL CHARACTERISTICS 1000 100 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) TA = 25°C Cib 10 Cob 1 0.1 1 10 100 100 ms 10 ms 1 ms 100 1 ms 10 ms 10 1 0.1 100 ms 1s 1 10 100 VR, REVERSE VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 7. Capacitance Figure 8. Safe Operating Area www.onsemi.com 4 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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