MSC2712GT1_05

MSC2712GT1, MSC2712YT1 General Purpose Amplifier Transistor NPN Surface Mount Features http://onsemi.com COLLECTOR 3 • Moisture Sensitivity Level: 1 • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200 Unit Vdc Vdc Vdc mAdc mAdc 2 1 Symbol PD TJ Tstg Max 200 150 −55 to +150 Unit mW °C °C 12G M G G 12Y M G G 3 SC−59 CASE 318D STYLE 1 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature MARKING DIAGRAMS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 12M, 12Y = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MSC2712GT1 MSC2712GT1G MSC2712YT1 MSC2712YT1G Package SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 May, 2005 − Rev. 5 Publication Order Number: MSC2712GT1/D MSC2712GT1, MSC2712YT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) MSC2712GT1 MSC2712YT1 Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Current −Gain − Bandwidth Product (IC = 1 mA, VCE = 10.0 V, f = 10 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. VCE(sat) fT 50 − Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO − − − hFE 200 120 − 400 240 0.5 Vdc MHz 0.1 2.0 1.0 Min 50 60 7.0 − Max − − − 0.1 Unit Vdc Vdc Vdc mAdc mAdc mAdc mAdc − http://onsemi.com 2 MSC2712GT1, MSC2712YT1 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 2 1 E b e DIM A A1 b c D E e L HE MIN 1.00 0.013 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.100 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.0394 0.0005 0.0138 0.0034 0.1063 0.0512 0.0670 0.0079 0.1102 INCHES NOM 0.0453 0.0022 0.0167 0.0053 0.1142 0.0591 0.0748 0.0157 0.1102 MAX 0.0511 0.0040 0.0196 0.0070 0.1220 0.0669 0.0826 0.0236 0.1181 A A1 L C STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 mm inches SCALE 10:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 MSC2712GT1, MSC2712YT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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