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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MSD2714AT1
Preferred Device
VHF/UHF Transistor
NPN Silicon
Features
• Pb−Free Package is Available
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
25
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
2
BASE
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, TA = 25°C
Derate above 25°C
PD
(Note 1)
RqJA
PD
(Note 2)
Thermal Resistance, Junction−to−Ambient
RqJA
625
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
3
2
1
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina
14A M G
G
1
14A = Specific Device Code
M
= Date Code*
G
=Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location
ORDERING INFORMATION
Device
MSD2714AT1
MSD2714AT1G
Package
Shipping †
SC−59
3000 / Tape & Reel
SC−59
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
Publication Order Number:
MSD2714AT1/D
MSD2714AT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
25
−
−
30
−
−
3.0
−
−
−
−
500
−
−
500
90
−
180
−
−
0.95
fT
650
−
−
MHz
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
−
0.7
pF
Common−Base Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Crb
−
−
0.65
pF
rb′Cc
−
−
9.0
ps
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 3.5 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 6.0 Vdc)
hFE
Base −Emitter On Voltage
(IC = 4.0 mAdc, VCE = 10 Vdc)
VBE
−
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector Base Time Constant
(IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY
(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)
yib, INPUT ADMITTANCE
0
70
gib
−10
60
50
jb ib (mmhos)
y ib , INPUT ADMITTANCE (mmhos)
80
−b ib
40
30
−20
1000 MHz
−30
700
−40
20
400
10
0
200
−50
100
200
300
400 500
f, FREQUENCY (MHz)
700
1000
−60
0
Figure 1. Rectangular Form
10
20
30
40
50
gib (mmhos)
Figure 2. Polar Form
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2
60
100
70
80
MSD2714AT1
yfb, FORWARD TRANSFER ADMITTANCE
70
60
bfb
60
400
200
50
50
600
100
40
700
−g fb
30
jb fb (mmhos)
y ib , FORWARD TRANSFER ADMITTANCE (mmhos)
TYPICAL CHARACTERISTICS
20
10
40
30
1000 MHz
0
−10
20
−20
−30
100
200
300
400 500
f, FREQUENCY (MHz)
10
1000
700
70
60
50
Figure 3. Rectangular Form
40
30
20
10
gfb (mmhos)
0
−10
−20
−30
1.2
1.6
2.0
Figure 4. Polar Form
yrb, REVERSE TRANSFER ADMITTANCE
5.0
0
4.0
−1.0
200
−2.0
400
100
MPS H11
jb rb (mmhos)
y rb , REVERSE TRANSFER ADMITTANCE (mmhos)
COMMON−BASE y PARAMETERS versus FREQUENCY
(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)
3.0
−brb
−brb
2.0
−3.0
700
MPS H10
1.0
−4.0
−grb
0
100
200
300
400 500
f, FREQUENCY (MHz)
700
−5.0
−2.0 −1.8 −1.2 −0.8
1000
Figure 5. Rectangular Form
1000 MHz
−0.4
0
0.4
grb (mmhos)
0.8
Figure 6. Polar Form
yob, OUTPUT ADMITTANCE
10
1000 MHz
9.0
8.0
8.0
7.0
700
6.0
5.0
jb ob(mmhos)
yob, OUTPUT ADMITTANCE (mmhos)
10
bob
4.0
6.0
4.0
400
3.0
200
2.0
gob
1.0
0
2.0
100
200
300
400 500
f, FREQUENCY (MHz)
100
700
0
1000
0
Figure 7. Rectangular Form
2.0
4.0
6.0
gob (mmhos)
Figure 8. Polar Form
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3
8.0
10
MSD2714AT1
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
D
3
HE
2
DIM
A
A1
b
c
D
E
e
L
HE
E
1
b
e
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
C
A
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: orderlit@onsemi.com
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4
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MSD2714AT1/D
