MSD601-RT1G

MSD601-RT1, MSD601-ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector − Base Voltage V(BR)CBO 60 Vdc Collector − Emitter Voltage V(BR)CEO 50 Vdc Emitter − Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 ~ +150 °C Rating Collector Current − Continuous Collector Current − Peak 1 BASE 2 EMITTER MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SC−59 CASE 318D x = M G = = Yx M G G R for RT1 S for ST1 Date Code Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 9 1 Publication Order Number: MSD601−RT1/D MSD601−RT1, MSD601−ST1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Symbol Min Max Unit Collector − Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 − Vdc Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 7.0 − Vdc Collector − Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO − 0.1 mAdc Collector − Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO − 100 nAdc Characteristic DC Current Gain (Note 1) (VCE = 10 Vdc, IC = 2.0 mAdc) MSD601−RT1 MSD601−ST1 (VCE = 2.0 Vdc, IC = 100 mAdc) − hFE1 Collector − Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) hFE2 210 290 90 340 460 − VCE(sat) − 0.5 Vdc 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. ORDERING INFORMATION Package Shipping† SC−59 3000 / Tape & Reel SC−59 (Pb−Free) 3000 / Tape & Reel SC−59 3000 / Tape & Reel SC−59 (Pb−Free) 3000 / Tape & Reel Device MSD−601RT1 MSD−601RT1G MSD−601ST1 MSD−601ST1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H DATE 28 JUN 2012 SCALE 2:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 C A MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 XXX MG G SOLDERING FOOTPRINT* 1 0.95 0.037 0.95 0.037 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 GENERIC MARKING DIAGRAM L A1 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 XXX M G = Specific Device Code = Date Code = Pb−Free Package* (*Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42664B SC−59 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. N.C. 3. ANODE STYLE 5: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE/CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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