MSD602-RT1G
General Purpose NPN
Amplifier Transistor
Features
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• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SC−59
CASE 318D
STYLE 1
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
60
Vdc
Collector−Emitter Voltage
V(BR)CEO
50
Vdc
Emitter−Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current − Continuous
IC
500
mAdc
IC(P)
1.0
Adc
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 ~ +150
°C
Collector Current − Peak
COLLECTOR
3
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
EMITTER
MARKING DIAGRAM
WR M G
G
WR
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MSD−602RT1G
SC−59
(Pb−Free)
3,000 / Tape & Reel
SMSD−602RT1G
SC−59
(Pb−Free)
3,000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 10
1
Publication Order Number:
MSD602−RT1/D
MSD602−RT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol
Characteristic
Collector−Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = 10 mA, IC = 0)
V(BR)EBO
Collector−Base Cutoff Current
(VCB = 20 V, IE = 0)
Min
Max
50
−
60
−
7.0
−
−
0.1
120
40
240
−
−
0.6
−
1.0
−
1.0
−
15
V
V
V
mA
ICBO
DC Current Gain (Note 1)
(VCE = 10 V, IC = 150 mA)
(VCE = 10 V, IC = 500 mA)
Unit
−
hFE1
hFE2
Collector−Emitter Saturation Voltage
(IC = 300 mA, IB = 30 mA)
VCE(sat)
Base−Emitter On Voltage
(IC = 300 mA, VCE = 5 V)
VBE(on)
Base−Emitter Saturation Voltage
(IC = 300 mA, IB = 30 mA)
VBE(sat)
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
V
V
V
Cob
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2
MSD602−RT1G
TYPICAL CHARACTERISTICS
1
1.2
1.1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
TA = 150°C
0.1
TA = 25°C
TA = −55°C
1
10
100
1000
TA = −30°C
0.8
TA = 25°C
TA = −55°C
0.7
0.6
0.5
0.4
TA = 80°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
TA = −55°C
10
1
1000
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10 mA
100 mA
300 mA
IC = 500 mA
0.2
0
0.01
1000
100
TA = 25°C
1.8
0.1
10
1
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Saturation Region
100
100
TA = −30°C
0.9
Cibo
C, CAPACITANCE (pF)
TA = −55°C
TA = 25°C
0.6
TA = 80°C
0.5
0.4
100
2.0
1.0
0.7
10
Figure 2. Base−Emitter Saturation Voltage vs.
Collector Current
TA = 25°C
0.8
1
Figure 1. Collector−Emitter Saturation Voltage
vs. Collector Current
TA = 150°C
10
0.1
TA = 150°C
IC, COLLECTOR CURRENT (mA)
VCE = 1 V
100
0.2
0.1
IC, COLLECTOR CURRENT (mA)
1000
hFE, DC CURRENT GAIN
1
0.9
0.3
0.01
0.1
VBE(on), BASE−EMITTER VOLTAGE (V)
IC/IB = 10
TA = 150°C
10
Cobo
0.3
0.2
1
VCE = 5 V
10
100
1000
1
0.1
1
10
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 5. Base−Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Capacitance
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3
100
MSD602−RT1G
TYPICAL CHARACTERISTICS
10000
VCE = 1 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
ftau, CURRENT−GAIN BANDWIDTH (MHz)
1000
100
10
0.1
100 ms
1s
1000
10
100
10 ms
1 ms
100
10
Single Pulse Test at TA = 25°C
1
1
100 ms
10 ms
1 ms
1000
10
1
100
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Current Gain Bandwidth Product vs.
Collector Current
Figure 8. Safe Operating Area
1000
Duty Cycle = 50%
RqJA, (°C/W)
100
10
20%
10%
5%
2%
1%
1
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 9. Thermal Response
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4
0.1
1
10
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
DATE 28 JUN 2012
SCALE 2:1
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
E
2
b
e
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
C
A
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
XXX MG
G
SOLDERING FOOTPRINT*
1
0.95
0.037
0.95
0.037
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
GENERIC
MARKING DIAGRAM
L
A1
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
XXX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package*
(*Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42664B
SC−59
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. N.C.
3. ANODE
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE/CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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