MSRD620CTT4RG

MSRD620CT, NRVSRD620VCT, SSRD8620CT Series Switch-mode Soft Ultrafast Recovery Reverse Polarity Power Rectifier www.onsemi.com State−of−the−art geometry features epitaxial construction with glass passivation. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. SOFT ULTRAFAST REVERSE POLARITY RECTIFIER 6.0 AMPERES, 200 VOLTS Features • Soft Ultrafast Recovery • Matched Dual Die Construction − May Be Paralleled for High • • • • Current Output Short Heat Sink Tab Manufactured − Not Sheared Epoxy Meets UL 94 V−0 @ 0.125 in. NRVSRD and SSRD8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* DPAK CASE 369C 1 4 3 MARKING DIAGRAM AYWW S 620RG Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.4 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • 260°C Max. for 10 Seconds ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 2 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† MSRD620CTRG DPAK (Pb−Free) 75 Units/Rail SSRD8620CTRG DPAK (Pb−Free) 75 Units/Rail MSRD620CTT4RG DPAK (Pb−Free) 2,500 / Tape & Reel NRVSRD620VCTT4RG DPAK (Pb−Free) 2,500 / Tape & Reel SSRD8620CTT4RG DPAK (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 October, 2016 − Rev. 4 1 Publication Order Number: MSRD620CTR/D MSRD620CT, NRVSRD620VCT, SSRD8620CT Series MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 200 V Average Rectified Forward Current (At Rated VR, TC = 162°C) Per Leg Per Package IO A 3.0 6.0 Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Per Package Storage/Operating Case Temperature IFSM A 45 Tstg, Tc −65 to +175 °C TJ −65 to +175 °C Operating Junction Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Thermal Resistance − Junction−to−Case (Note 1) Per Leg RqJC Thermal Resistance − Junction−to−Ambient (Note 1) Per Leg RqJA Thermal Resistance − Junction−to−Ambient (Note 2) Per Leg RqJA Value Unit °C/W 5.0 °C/W 60 °C/W 166 1. Mounted with 700 mm2 copper pad size (approximately 1 in2) 1 oz FR4 board. 2. Mounted with pad size approximately 46 mm2 copper, 1 oz FR4 board. ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 3) Per Leg (IF = 3.0 A) (IF = 6.0 A) VF Maximum Instantaneous Reverse Current (Note 3) Per Leg (VR = 200 V) IR Maximum Reverse Recovery Time (Note 4) Per Leg (VR = 30 V, IF = 1.0 A, di/dt = 50 A/ms) trr Value Unit TJ = 25°C TJ = 125°C 1.15 1.30 0.95 1.15 TJ = 25°C TJ = 125°C 1.0 200 V mA ns 75 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. 4. trr measured projecting from 25% of IRM to ground. www.onsemi.com 2 MSRD620CT, NRVSRD620VCT, SSRD8620CT Series IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 100 10 TJ = 150°C 125°C 1.0 25°C -55°C 0.1 0 1.0 0.5 1.5 2.0 2.5 3.0 125°C 1.0 25°C -55°C 0.1 0 1.0 0.5 1.5 2.0 2.5 3.0 Figure 1. Typical Forward Voltage, Per Leg Figure 2. Maximum Forward Voltage, Per Leg 1E-03 IR , MAXIMUM REVERSE CURRENT (AMPS) IR , REVERSE CURRENT (AMPS) TJ = 150°C VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) TJ = 150°C 1E-05 125°C 1E-06 1E-07 25°C 1E-08 1E-09 -55°C 1E-10 0 20 40 60 80 100 120 140 160 TJ = 150°C 1E-04 125°C 1E-05 1E-06 25°C 1E-07 -55°C 1E-08 180 200 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current, Per Leg Figure 4. Maximum Reverse Current, Per Leg IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 100 TJ = 25°C C, CAPACITANCE (pF) 10 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1E-04 10 1.0 0 100 40 80 120 160 10 RATED VOLTAGE APPLIED RqJC = 5°C/W 9 8 7 6 dc 5 4 3 SQUARE WAVE 2 1 0 80 200 90 100 110 120 130 140 150 160 170 180 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Current Derating, Case (Per Leg) Figure 5. Typical Capacitance www.onsemi.com 3 MSRD620CT, NRVSRD620VCT, SSRD8620CT Series TYPICAL CHARACTERISTICS 1000 R(t) (°C/W) 100 Duty Cycle = 50% 20% 10 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 10 100 1000 100 1000 Figure 7. Thermal Response, Junction−to−Ambient (46 mm2 pad) 100 R(t) (°C/W) Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 Figure 8. Thermal Response, Junction−to−Ambient (1 in2 pad) www.onsemi.com 4 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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