MSRF860G

MSR860G, MSRF860G Power Rectifier, Soft Recovery, Switch-mode, 8 A, 600 V These state−of−the−art devices are designed for use as free wheeling diodes in variable speed motor control applications and switching power supplies. Features • Soft Recovery with Guaranteed Low Reverse Recovery Charge • • • • • (QRR) and Peak Reverse Recovery Current (IRRM) 150°C Operating Junction Temperature Epoxy meets UL 94 V−0 @ 0.125 in Low Forward Voltage Low Leakage Current These are Pb−Free Devices http://onsemi.com SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS 1 4 3 4 Mechanical Characteristics: 4 • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 600 V IO 8.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 125°C) IFRM 16 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Tstg, TC −65 to +150 °C TJ −65 to +150 °C Symbol Value Unit MSR860G Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient RqJC RqJA 1.6 72.8 MSRF860G Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient RqJC RqJA 4.75 75 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 125°C) Storage/Operating Case Temperature Operating Junction Temperature 1 1 3 TO−220AC CASE 221B STYLE 1 MARKING DIAGRAMS AY WWG MSR860 KA A Y WW G KA THERMAL CHARACTERISTICS Parameter °C/W February, 2014 − Rev. 6 AY WWG MSRF860 KA = Assembly Location = Year = Work Week = Pb−Free Package = Diode Polarity ORDERING INFORMATION °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 3 TO−220 FULLPAK CASE 221AG STYLE 1 1 Package Shipping MSR860G Device TO−220AC (Pb−Free) 50 Units / Rail MSRF860G TO−220FP (Pb−Free) 50 Units / Rail Publication Order Number: MSR860/D MSR860G, MSRF860G ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (IF = 8.0 A) (Note 1) Maximum Typical VF Maximum Instantaneous Reverse Current (VR = 600 V) Maximum Typical IR Maximum Reverse Recovery Time (Note 2) (VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms) trr Maximum Typical Value Unit TJ = 25°C TJ = 150°C 1.7 1.4 1.3 1.1 TJ = 25°C TJ = 150°C 10 2.0 1000 80 TJ = 25°C TJ = 125°C 120 95 190 125 V mA ns Typical Recovery Softness Factor (VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms) s = tb/ta 2.5 3.0 Maximum Peak Reverse Recovery Current (VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms) IRRM 5.8 8.3 A Maximum Reverse Recovery Charge (VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms) QRR 350 700 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2% 2. TRR measured projecting from 25% of IRRM to zero current TYPICAL ELECTRICAL CHARACTERISTICS 100 100 IR , REVERSE CURRENT (m A) TJ = 150°C 125°C 10 100°C 1 25°C 0.1 100°C 100 25°C 1 0.7 0.9 1.1 1.3 1.5 300 500 400 600 Figure 2. Typical Reverse Current 10 0.5 200 VR, REVERSE VOLTAGE (VOLTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TJ = 150°C 1.7 1.9 14 12 dc 10 SQUARE WAVE 8 6 4 RATED VR APPLIED 2 0 0 40 80 120 VF, FORWARD VOLTAGE DROP (VOLTS) TC, CASE TEMPERATURE (°C) Figure 1. Typical Forward Voltage Figure 3. Current Derating, Case http://onsemi.com 2 160 MSR860G, MSRF860G PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS 3.0 2.5 2.0 dc 1.5 SQUARE WAVE 1.0 RATED VR APPLIED 0.5 0 0 40 80 120 TA, AMBIENT TEMPERATURE (°C) 160 16 14 12 10 SQUARE WAVE 6 4 TJ = 150°C 2 0 0 2 4 6 8 10 12 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Ambient 250 TJ = 25°C VR = 400 V 140 120 t rr , REVERSE RECOVERY TIME (ns) t rr , REVERSE RECOVERY TIME (ns) 14 Figure 5. Power Dissipation 160 IF = 16 A 100 80 8A 60 4A 40 20 0 100 TJ = 125°C VR = 400 V 200 IF = 16 A 150 8A 100 4A 50 0 200 300 500 400 100 200 dIF/dt (A/mS) IRRM, PEAK REVERSE RECOVERY CURRENT (AMPS) IF = 16 A 6 8A 4A 4 2 TJ = 25°C VR = 400 V 0 200 300 400 500 Figure 7. Typical Reverse Recovery Time 8 100 300 dIF/dt (A/mS) Figure 6. Typical Reverse Recovery Time I RRM , PEAK REVERSE RECOVERY CURRENT (AMPS) dc 8 400 500 14 12 IF = 16 A 10 8 4A 8A 6 4 TJ = 125°C VR = 400 V 2 0 100 dIF/dt (A/mS) 200 300 400 dIF/dt (A/mS) Figure 9. Typical Peak Reverse Recovery Current Figure 8. Typical Peak Reverse Recovery Current http://onsemi.com 3 500 MSR860G, MSRF860G TYPICAL ELECTRICAL CHARACTERISTICS 900 Q RR , REVERSE RECOVERY CHARGE (nC) Q RR , REVERSE RECOVERY CHARGE (nC) 350 300 250 IF = 16 A 200 8A 150 4A 100 TJ = 25°C VR = 400 V 50 0 100 200 300 800 600 8A 500 400 4A 300 200 TJ = 125°C VR = 400 V 100 0 500 400 IF = 16 A 700 100 200 dIF/dt (A/mS) 400 500 Figure 11. Typical Reverse Recovery Charge Figure 10. Typical Reverse Recovery Charge 250 90 IF = 16 A 80 E OFF , SWITCHING OFF LOSSES ( m J) E OFF , SWITCHING OFF LOSSES ( m J) 300 dIF/dt (A/mS) 70 60 50 8A 40 30 4A 20 TJ = 25°C VR = 400 V 10 IF = 16 A 200 150 8A 100 4A 50 TJ = 125°C VR = 400 V 0 0 100 200 300 dlF/dt (A/mS) 400 500 200 100 300 dIF/dt (A/mS) 400 500 Figure 13. Typical Switching Off Losses Figure 12. Typical Switching Off Losses r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) 1.0 D = 0.5 0.1 0.1 0.05 P(pk) 0.01 t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 ZqJC(t) = r(t) RqJC RqJC = 1.6°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.01 0.01 0.1 1.0 10 t, TIME (ms) Figure 14. Thermal Response (MSR860) http://onsemi.com 4 100 1000 MSR860G, MSRF860G r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) (°C/W) 10 D = 0.5 1.0 0.1 0.2 0.1 0.05 0.02 P(pk) 0.01 0.01 t1 SINGLE PULSE 0.001 0.000001 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 t, TIME (s) 0.1 1.0 ZqJC(t) = r(t) RqJC RqJC = 1.6°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 100 1000 Figure 15. Thermal Response, (MSRF860) Junction−to−Case (RqJC) r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) (°C/W) 100 10 D = 0.5 0.2 0.1 0.05 0.02 1.0 0.01 P(pk) 0.1 0.01 0.001 0.000001 t1 SINGLE PULSE 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 t, TIME (s) 0.1 1.0 ZqJC(t) = r(t) RqJC RqJC = 1.6°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 Figure 16. Thermal Response, (MSRF860) Junction−to−Ambient (RqJA) http://onsemi.com 5 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPACK, 2−LEAD CASE 221AG ISSUE B A E B P E/2 0.14 SCALE 1:1 M B A A H1 M SEATING PLANE A1 4 Q D C NOTE 3 1 2 3 L L1 3X 3X b2 c b 0.25 M B A M C A2 e SIDE VIEW e1 TOP VIEW A NOTE 6 NOTE 6 D DATE 27 AUG 2015 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. MILLIMETERS DIM MIN MAX A 4.30 4.70 A1 2.50 2.90 A2 2.50 2.90 b 0.54 0.84 b2 1.10 1.40 c 0.49 0.79 D 14.22 15.88 E 9.65 10.67 e 2.54 BSC e1 5.08 BSC H1 6.40 6.90 L 12.70 14.73 L1 --2.80 P 3.00 3.40 Q 2.80 3.20 GENERIC MARKING DIAGRAM* H1 D XX XXXXXXXXX AWLYWWG SECTION A−A A ALTERNATE CONSTRUCTION SECTION D−D 1 A WL Y WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON52563E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−220 FULLPACK, 2−LEAD PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220, 2−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q SCALE 1:1 F S T DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G STYLE 1: PIN 1. 2. 3. 4. DOCUMENT NUMBER: DESCRIPTION: 98ASB42149B TO−220, 2−LEAD CATHODE N/A ANODE CATHODE DATE 12 APR 2013 STYLE 2: PIN 1. 2. 3. 4. INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 ANODE N/A CATHODE ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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