MUN2115T1G

MUN2111T1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−59 package which is designed for low power surface mount applications. Features http://onsemi.com PIN 3 COLLECTOR (OUTPUT) R1 PIN 2 BASE (INPUT) R2 • • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: Class 1 − Machine Model: Class B The SC−59 Package Can be Soldered Using Wave or Reflow The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die Pb−Free Packages are Available PIN 1 EMITTER (GROUND) 3 2 1 SC−59 CASE 318D PLASTIC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector − Base Voltage Collector − Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc MARKING DIAGRAM 6x M G G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead Junction and Storage Temperature Range Symbol PD Max 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) 540 (Note 1) 370 (Note 2) 264 (Note 1) 287 (Note 2) −55 to +150 Unit mW °C/W °C/W °C/W RqJA RqJL TJ, Tstg 6x = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION °C See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 inch Pad. DEVICE MARKING INFORMATION See device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 17 1 Publication Order Number: MUN2111T1/D MUN2111T1 Series DEVICE MARKING AND RESISTOR VALUES Device MUN2111T1 MUN2111T1G MUN2111T3G MUN2112T1 MUN2112T1G MUN2113T1 MUN2113T1G MUN2114T1 MUN2114T1G MUN2115T1 (Note 3) MUN2115T1G (Note 3) MUN2116T1 (Note 3) MUN2116T1G (Note 3) MUN2130T1 (Note 3) MUN2130T1G (Note 3) MUN2131T1 (Note 3) MUN2131T1G (Note 3) MUN2132T1 (Note 3) MUN2132T1G (Note 3) MUN2133T1 (Note 3) MUN2133T1G (Note 3) MUN2134T1 (Note 3) MUN2134T1G (Note 3) MUN2136T1 MUN2136T1G MUN2137T1 MUN2137T1G MUN2140T1 (Note 3) MUN2140T1G (Note 3) Package SC−59 SC−59 (Pb−Free) SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) Marking 6A 6A 6A 6B 6B 6C 6C 6D 6D 6E 6E 6F 6F 6G 6G 6H 6H 6J 6J 6K 6K 6L 6L 6N 6N 6P 6P 6T 6T R1 (K) 10 10 10 22 22 47 47 10 10 10 10 4.7 4.7 1.0 1.0 2.2 2.2 4.7 4.7 4.7 4.7 22 22 100 100 47 47 47 47 R2 (K) 10 10 10 22 22 47 47 47 47 ∞ ∞ ∞ ∞ 1.0 1.0 2.2 2.2 4.7 4.7 47 47 47 47 100 100 22 22 ∞ ∞ 3000 / Tape & Reel 3000 / Tape & Reel Shipping † 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New resistor combinations. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN2111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 ICBO ICEO IEBO − − − − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.20 − − nAdc nAdc mAdc Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2130T1 MUN2133T1 MUN2136T1 MUN2137T1 MUN2131T1 MUN2116T1 MUN2132T1 MUN2134T1 MUN2140T1 V(BR)CBO V(BR)CEO Vdc Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 120 − − − − − − − − − − − − − − 60 100 140 140 250 250 5.0 15 27 140 130 150 140 250 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Vdc 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) (IC = 10 mA, IB = 5.0 mA) (IC = 10 mA, IB = 1.0 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL MUN2111T1 MUN2112T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2113T1 MUN2140T1 MUN2136T1 MUN2137T1 − − − − − − − − − − − − − − (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 MUN2111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic ON CHARACTERISTICS (Note 4) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2130T1 MUN2115T1 MUN2116T1 MUN2131T1 MUN2132T1 MUN2140T1 MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 MUN2111T1/MUN2112T1/MUN2113T1/ MUN2136T1 MUN2114T1 MUN2115T1/MUN2116T1/MUN2140T1 MUN2130T1/MUN2131T1/MUN2132T1 MUN2133T1 MUN2134T1 MUN2137T1 R1 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 32.9 0.8 0.17 − 0.8 0.055 0.38 1.7 − − − − − − − − − − − − − − 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 47 1.0 0.21 − 1.0 0.1 0.47 2.1 − − − − − − − − − − − − − − 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 61.1 1.2 0.25 − 1.2 0.185 0.56 2.6 kW Vdc Symbol Min Typ Max Unit (VCC = 5.0 V, (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) VB = 0.25 V, RL = 1.0 kW) Input Resistor Resistor Ratio R1/R2 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. 350 PD, POWER DISSIPATION (mW) 300 250 200 150 RqJA= 370°C/W 100 50 0 −50 0 50 100 150 +12 V Typical Application for PNP BRTs LOAD TA, AMBIENT TEMPERATURE (5°C) Figure 1. Derating Curve Figure 2. Inexpensive, Unregulated Current Source http://onsemi.com 4 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = −2°5C 75°C 0.1 hFE, DC CURRENT GAIN 1000 VCE = 10 V 25°C TA = 75°C 100 −25°C 25°C 0.01 0 40 60 IC, COLLECTOR CURRENT (mA) 20 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. VCE(sat) vs. IC Figure 4. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 100 75°C 25°C TA = −25°C Cob, CAPACITANCE (pF) 3 10 1 2 0.1 VO = 5 V 1 0.01 0.001 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 1 6 7 8 2 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 5. Output Capacitance Figure 6. Output Current vs. Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) 10 TA = −25°C 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 7. Input Voltage vs. Output Current http://onsemi.com 5 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN2112T1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 25°C 1 75°C TA = −25°C 1000 VCE = 10 V hFE, DC CURRENT GAIN TA = 75°C 100 25°C −25°C 0.1 0.01 10 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 10 IC, COLLECTOR CURRENT (mA) 10 0 Figure 8. VCE(sat) vs. IC Figure 9. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C 10 25°C TA = −25°C Cob, CAPACITANCE (pF) 3 1 2 0.1 1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 10. Output Capacitance Figure 11. Output Current vs. Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 12. Input Voltage vs. Output Current http://onsemi.com 6 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN2113T1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = −25°C 75°C hFE, DC CURRENT GAIN TA = 75°C 25°C 100 −25°C 1000 25°C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 13. VCE(sat) vs. IC Figure 14. DC Current Gain 1 f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 TA = 75°C 25°C −25°C Cob, CAPACITANCE (pF) 0.8 10 1 0.6 0.4 0.1 0.2 0.01 VO = 5 V 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 Figure 15. Output Capacitance Figure 16. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 17. Input Voltage vs. Output Current http://onsemi.com 7 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN2114T1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = −25°C 25°C 180 160 hFE, DC CURRENT GAIN 140 120 100 80 60 40 20 20 40 60 IC, COLLECTOR CURRENT (mA) 80 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) VCE = 10 V 25°C −25°C TA = 75°C 0.1 75°C 0.01 0.00 0 1 Figure 18. VCE(sat) vs. IC Figure 19. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 IC, COLLECTOR CURRENT (mA) TA = 75°C 25°C −25°C 10 VO = 5 V 1 0 2 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 20. Output Capacitance 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C Figure 21. Output Current vs. Input Voltage 25°C 75°C 1 VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 22. Input Voltage vs. Output Current http://onsemi.com 8 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN2131T1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 1 IC/IB =10 hFE, DC CURRENT GAIN 1000 IC/IB = 10 100 25°C 75°C 10 −25°C 0.1 75°C −25°C 25°C 0.01 0 5 10 15 20 25 30 35 IC, COLLECTOR CURRENT (mA) 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 23. VCE(sat) vs. IC 12 IC, COLLECTOR CURRENT (mA) 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 VR, REVERSE BIAS VOLTAGE (V) 100 75°C 10 Figure 24. DC Current Gain Cob, CAPACITANCE (pF) f = 1 MHz IE = 0 A TA = 25°C −25°C 1 TA = 25°C 0.01 VO = 5 V 0.01 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (V) Figure 25. Output Capacitance 10 Vin, INPUT VOLTAGE (VOLTS) Figure 26. Output Current vs. Input Voltage TA = −25°C 75°C 1 25°C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 27. Input Voltage vs. Output Current http://onsemi.com 9 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2133T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C 0.1 −25°C 25°C hFE, DC CURRENT GAIN 1000 VCE = 10 V 75°C 100 TA = −25°C 25°C 0.01 10 0.001 0 30 20 40 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 28. VCE(sat) versus IC Figure 29. DC Current Gain 8 7 Cob, CAPACITANCE (pF) 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 100 75°C 10 25°C 1 0.1 TA = −25°C 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 32. Input Voltage versus Output Current http://onsemi.com 10 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1000 75°C hFE, DC CURRENT GAIN 100 TA = −25°C 25°C 0.1 −25°C 25°C 75°C 10 IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 1 1 VCE = 10 V 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 33. Maximum Collector Voltage vs. Collector Current Figure 34. DC Current Gain 1.2 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 1.0 0.8 0.6 0.4 0.2 0 f = 1 MHz IE = 0 V TA = 25°C 100 25°C 10 TA = −25°C 75°C 1 VO = 5 V 0.1 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 Vin, INPUT VOLTAGE (VOLTS) Figure 35. Output Capacitance Figure 36. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 25°C 10 TA = −25°C 1 75°C 0 2 VO = 0.2 V 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 20 Figure 37. Input Voltage vs. Output Current http://onsemi.com 11 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1000 hFE, DC CURRENT GAIN 75°C TA = −25°C 25°C TA = −25°C 0.1 75°C 100 25°C IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 38. Maximum Collector Voltage vs. Collector Current Figure 39. DC Current Gain 1.4 Cob, CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 100 75°C TA = −25°C 25°C 10 1 0.1 0.01 VO = 5 V 0.001 0 1 2 3 4 5 6 7 8 9 10 11 Vin, INPUT VOLTAGE (VOLTS) Figure 40. Output Capacitance Figure 41. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 TA = −25°C 75°C 1 25°C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 42. Input Voltage vs. Output Current http://onsemi.com 12 MUN2111T1 Series PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 2 1 E b e DIM A A1 b c D E e L HE MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 A A1 L C STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 mm inches SCALE 10:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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