MUN5113T3

MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. Features http://onsemi.com PNP SILICON BIAS RESISTOR TRANSISTORS PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC−70/SOT−323 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel − Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. Pb−Free Packages are Available PIN 1 BASE (INPUT) R1 R2 3 1 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SC−70/SOT−323 CASE 419 STYLE 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 6x M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad Symbol PD Max 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) 618 (Note 1) 403 (Note 2) 280 (Note 1) 332 (Note 2) −55 to +150 Unit mW °C/W °C/W °C/W °C 6x = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. RqJA RqJL TJ, Tstg ORDERING INFORMATION See specific ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 8 Publication Order Number: MUN5111T1/D MUN5111T1 Series ORDERING INFORMATION AND RESISTOR VALUES Device MUN5111T1 MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G MUN5113T1G MUN5114T1 MUN5114T1G MUN5115T1 (Note 3) MUN5115T1G (Note 3) MUN5116T1 (Note 3) MUN5116T1G (Note 3) MUN5130T1 (Note 3) MUN5130T1G (Note 3) MUN5131T1 (Note 3) MUN5131T1G (Note 3) MUN5132T1 (Note 3) MUN5132T1G (Note 3) MUN5133T1 (Note 3) MUN5133T1G (Note 3) MUN5134T1 (Note 3) MUN5134T1G (Note 3) MUN5135T1 (Note 3) MUN5135T1G (Note 3) MUN5136T1 MUN5136T1G MUN5137T1 MUN5137T1G Package SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) SC−70/SOT−323 SC−70/SOT−323 (Pb−Free) Marking 6A 6A 6B 6B 6C 6C 6C 6C 6C 6D 6D 6E 6E 6F 6F 6G 6G 6H 6H 6J 6J 6K 6K 6L 6L 6M 6M 6N 6N 6P 6P R1 (K) 10 10 22 22 47 47 47 47 47 10 10 10 10 4.7 4.7 1.0 1.0 2.2 2.2 4.7 4.7 4.7 4.7 22 22 2.2 2.2 100 100 47 47 R2 (K) 10 10 22 22 47 47 47 47 47 47 47 ∞ ∞ ∞ ∞ 1.0 1.0 2.2 2.2 4.7 4.7 47 47 47 47 47 47 100 100 22 22 Shipping † 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 ICBO ICEO IEBO − − − − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 − − nAdc nAdc mAdc Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 V(BR)CBO V(BR)CEO Vdc Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 − 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 − − − − − − − − − − − − − − − 0.25 Vdc Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/ MUN5132T1/MUN5133T1/MUN5134T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5113T1 MUN5136T1 MUN5137T1 VCE(sat) VOL − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 MUN5111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN5130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN5115T1 MUN5116T1 MUN5131T1 MUN5132T1 Input Resistor MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 Resistor Ratio MUN5111T1/MUN5112T1/MUN5113T1/MUN5136T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5137T1 R1/R2 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 Symbol VOH Min 4.9 Typ − Max − Unit Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 kW 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 50 0 −50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 4 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 1000 VCE = 10 V TA = −25°C 0.1 75°C 25°C TA = 75°C 100 25°C −25°C 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25°C 100 75°C 25°C TA = −25°C C ob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = −25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V 1 TA = −25°C 25°C TA = 75°C 100 25°C −25°C 75°C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 100 75°C 10 25°C TA = −25°C C ob , CAPACITANCE (pF) 3 2 1 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75°C 25°C 100 −25°C TA = −25°C 0.1 75°C 25°C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 0.8 C ob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25°C 100 10 1 0.1 0.01 VO = 5 V 0 1 2 TA = 75°C 25°C −25°C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) 0.001 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) TA = −25°C 25°C 75°C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25°C −25°C TA = 75°C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C IC, COLLECTOR CURRENT (mA) 25°C −25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25°C TA = −25°C +12 V 75°C 1 Typical Application for PNP BRTs LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 8 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1000 hFE, DC CURRENT GAIN 75°C 100 −25°C 25°C 10 0.1 75°C −25°C 25°C 0.01 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 35 1 0 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) 120 Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain 10 9 Cob, CAPACITANCE (pF) 8 7 6 5 4 3 2 1 0 IC, COLLECTOR CURRENT (mA) 100 75°C 10 −25°C 25°C 1 0.1 0.01 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) −25°C 75°C 1 25°C 0.1 0 5 10 15 20 25 30 35 40 IC, OUTPUT CURRENT (mA) 45 50 Figure 27. Input Voltage versus Output Current http://onsemi.com 9 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000 75°C 100 TA = −25°C 25°C 0.1 −25°C 25°C 75°C 10 IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 28. Maximum Collector Voltage versus Collector Current Figure 29. DC Current Gain 1.2 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 1.0 0.8 0.6 0.4 0.2 0 f = 1 MHz IE = 0 V TA = 25°C 100 25°C 10 TA = −25°C 75°C 1 VO = 5 V 0.1 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 Vin, INPUT VOLTAGE (VOLTS) Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 25°C 10 TA = −25°C 1 75°C 0 2 VO = 0.2 V 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 20 Figure 32. Input Voltage versus Output Current http://onsemi.com 10 MUN5111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000 75°C TA = −25°C 25°C TA = −25°C 0.1 75°C 100 25°C IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0.01 Figure 33. Maximum Collector Voltage versus Collector Current Figure 34. DC Current Gain 1.4 Cob, CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 100 75°C TA = −25°C 25°C 10 1 0.1 0.01 VO = 5 V 0.001 0 1 2 3 4 5 6 7 8 9 10 11 Vin, INPUT VOLTAGE (VOLTS) Figure 35. Output Capacitance Figure 36. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 TA = −25°C 75°C 1 25°C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 37. Input Voltage versus Output Current http://onsemi.com 11 MUN5111T1 Series PACKAGE DIMENSIONS SC−70/SOT−323 CASE 419−04 ISSUE M D e1 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. HE 1 2 E b e A 0.05 (0.002) A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 A1 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 12 MUN5111T1/D