MUN5111DW1T1G Series
Preferred Devices
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1G series, two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium.
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(3) R1 Q1 R2 (4) (2) R2 Q2 R1 (5) (6) (1)
• • • •
Simplifies Circuit Design Reduces Board Space Reduces Component Count These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
1
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value − 50 −50 −100 Unit Vdc Vdc mAdc
SC−88 / SOT−363 CASE 419B STYLE 1
MARKING DIAGRAM
6 xx M G G
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 670 (Note 1) 490 (Note 2) Max 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) 493 (Note 1) 325 (Note 2) 188 (Note 1) 208 (Note 2) − 55 to +150 Unit mW mW/°C °C/W xx M G 1
= Device Code (Refer to page 2) = Date Code = Pb−Free Package
RqJA
(Note: Microdot may be in either location)
ORDERING INFORMATION
Unit mW mW/°C °C/W °C/W °C
Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the table on page 2 of this data sheet.
Symbol PD
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet.
RqJA RqJL TJ, Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad 1 Publication Order Number: MUN5111DW1T1/D
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 8
MUN5111DW1T1G Series
ORDERING INFORMATION, DEVICE MARKINGS AND RESISTOR VALUES
Device MUN5111DW1T1G MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G Package SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) Marking 0A 0B 0C 0D 0E 0F 0G 0H 0J 0K 0L 0M 0N 0P R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 47 100 22 Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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MUN5111DW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = −50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = −50 V, IB = 0) Emitter-Base Cutoff Current (VEB = −6.0 V, IC = 0) MUN5111DW1T1G MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G ICBO ICEO IEBO − − − − − − − − − − − − − − − − −50 −50 − − − − − − − − − − − − − − − − − − −100 −500 −0.5 −0.2 −0.1 −0.2 −0.9 −1.9 −4.3 −2.3 −1.5 −0.18 −0.13 −0.2 −0.05 −0.13 − − nAdc nAdc mAdc Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage (IC = −10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = −2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) Collector-Emitter Saturation Voltage (IC = −10 mA, IB = −0.3 mA) MUN5111DW1T1G MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5137DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5111DW1T1G MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G
V(BR)CBO V(BR)CEO
Vdc Vdc
VCE(sat)
Vdc − − − − − − − − − − − − − − 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 − − − − − − − − − − − − − − 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 −0.25 −0.25 −0.25 −0.25 −0.25 −0.25 −0.25 −0.25 −0.25 −0.25 −0.25 −0.25 −0.25 −0.25 − − − − − − − − − − − − − −
(IC = −10 mA, IB = −5 mA) (IC = −10 mA, IB = −1 mA)
DC Current Gain (VCE = −10 V, IC = −5.0 mA)
hFE
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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MUN5111DW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic ON CHARACTERISTICS (Note 4) (Continued) Output Voltage (on) (VCC = −5.0 V, VB = −2.5 V, RL = 1.0 kW) MUN5111DW1T1G MUN5112DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5113DW1T1G MUN5136DW1T1G MUN5137DW1T1G MUN5111DW1T1G MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5130DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5137DW1T1G MUN5111DW1T1G MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G MUN5111DW1T1G MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G MUN5132DW1T1G MUN5133DW1T1G MUN5134DW1T1G MUN5135DW1T1G MUN5136DW1T1G MUN5137DW1T1G VOL Vdc − − − − − − − − − − − − − − −4.9 −4.9 −4.9 −4.9 −4.9 −4.9 −4.9 −4.9 −4.9 −4.9 −4.9 −4.9 −4.9 −4.9 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.8 0.8 0.17 − − 0.8 0.8 0.8 0.055 0.38 0.038 0.8 1.7 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 1.0 1.0 0.21 − − 1.0 1.0 1.0 0.12 0.47 0.047 1.0 2.15 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 Vdc − − − − − − − − − − − − − − 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 1.2 1.2 0.25 − − 1.2 1.2 1.2 0.185 0.56 0.056 1.2 2.6 kW Symbol Min Typ Max Unit
(VCC = −5.0 V, VB = −3.5 V, RL = 1.0 kW) (VCC = −5.0 V, VB = −5.5 V, RL = 1.0 kW) (VCC = −5.0 V, VB = −4.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = −5.0 V, VB = −0.5 V, RL = 1.0 kW)
VOH
(VCC = −5.0 V, VB = −0.05 V, RL = 1.0 kW) (VCC = −5.0 V, VB = − 0.25 V, RL = 1.0 kW)
Input Resistor
R1
Resistor Ratio
R1/R2
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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MUN5111DW1T1G Series
ALL MUN5111DW1T1G SERIES DEVICES
300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 − 50 RqJA = 490°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150
Figure 1. Derating Curve − ALL DEVICES
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1G
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 1000 VCE = 10 V
TA = -25°C 0.1 75°C 25°C
TA = 75°C 25°C 100 -25°C
0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4 f = 1 MHz lE = 0 V TA = 25°C
100
75°C
25°C TA = -25°C
Cob , CAPACITANCE (pF)
3
IC, COLLECTOR CURRENT (mA)
10
1
2
0.1
1
0.01 0 1 2
VO = 5 V 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS)
10
TA = -25°C 25°C 75°C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1G
10 IC/IB = 10 h FE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
1 TA = -25°C
25°C
TA = 75°C 100
25°C
-25°C
75°C 0.1
0.01
10 0 20 IC, COLLECTOR CURRENT (mA) 40 50 1 10 IC, COLLECTOR CURRENT (mA) 100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4 f = 1 MHz lE = 0 V TA = 25°C
100 75°C IC, COLLECTOR CURRENT (mA) 10
25°C TA = -25°C
C ob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01 0.001 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8
VO = 5 V 9 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 75°C 25°C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1G
1 IC/IB = 10 1000 h FE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C 100 -25°C
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TA = -25°C 75°C 0.1
25°C
0.01
0
10 20 30 IC, COLLECTOR CURRENT (mA)
40
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1 f = 1 MHz lE = 0 V TA = 25°C
100
TA = 75°C
25°C -25°C
IC, COLLECTOR CURRENT (mA)
0.8 C ob , CAPACITANCE (pF)
10 1
0.6
0.4
0.1
0.2
0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 25°C 75°C
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1G
1 IC/IB = 10 h FE , DC CURRENT GAIN (NORMALIZED) TA = -25°C 25°C 75°C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25°C -25°C TA = 75°C
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
0.1
0.01
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25°C
100 TA = 75°C IC, COLLECTOR CURRENT (mA) 25°C
-25°C 10
VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25°C TA = -25°C
75°C 1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5115DW1T1G
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01
1000 75°C TA = −25°C 100 25°C
VCE = 10 V
0.1 25°C
10
0.001
0
30 20 40 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
12 10 8 6 4 2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C
100 75°C 10 25°C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = −25°C
Cob, CAPACITANCE (pF)
0
5
10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V
TA = −25°C 1 75°C 25°C
0.1
0
10 20 30 40 IC, COLLECTOR CURRENT (mA)
50
Figure 26. Input Voltage versus Output Current http://onsemi.com
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1G
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01
1000 75°C TA = −25°C 25°C
VCE = 10 V
0.1 25°C
100
10
0.001
0
30 20 40 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
12 10 8 6 4 2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C
100 75°C 10 25°C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = −25°C
Cob, CAPACITANCE (pF)
0
5
10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
1
TA = −25°C 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 31. Input Voltage versus Output Current http://onsemi.com
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1G
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 75°C −25°C 25°C 0.01 hFE, DC CURRENT GAIN
1000 VCE = 10 V
0.1
100 75°C 10 25°C TA = −25°C 1 1 10 IC, COLLECTOR CURRENT (mA) 100
0.001
0
5
10 15 20 25 IC, COLLECTOR CURRENT (mA)
30
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
100 IC, COLLECTOR CURRENT (mA) 75°C 10 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = −25°C 25°C
Cob, CAPACITANCE (pF)
TBD
0.001 VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25
Figure 36. Input Voltage versus Output Current http://onsemi.com
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5131DW1T1G
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN
1000 VCE = 10 V
0.1 25°C
100 75°C 10 TA = −25°C 25°C
0.001
0
5
10 15 20 25 IC, COLLECTOR CURRENT (mA)
30
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 37. VCE(sat) versus IC
Figure 38. DC Current Gain
12 10 8 6 4 2 0 f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10 75°C 25°C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = −25°C
Cob, CAPACITANCE (pF)
0
5
10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C
25°C
VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25
Figure 41. Input Voltage versus Output Current http://onsemi.com
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132DW1T1G
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 75°C −25°C hFE, DC CURRENT GAIN
1000 VCE = 10 V 75°C
0.1 25°C
100
25°C 10 TA = −25°C
0.01
0.001
0
30 20 40 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 42. VCE(sat) versus IC
Figure 43. DC Current Gain
12 10 8 6 4 2 0 f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10
75°C 25°C
Cob, CAPACITANCE (pF)
1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = −25°C
0
5
10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 44. Output Capacitance
Figure 45. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 46. Input Voltage versus Output Current http://onsemi.com
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133DW1T1G
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 75°C 0.1 −25°C 0.01 25°C hFE, DC CURRENT GAIN
1000 VCE = 10 V 75°C 100 TA = −25°C
25°C
10
0.001
0
30 20 40 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 47. VCE(sat) versus IC
Figure 48. DC Current Gain
8 7 Cob, CAPACITANCE (pF) 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 75°C 10 25°C 1 0.1 0.01 TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 49. Output Capacitance
Figure 50. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 51. Input Voltage versus Output Current http://onsemi.com
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5134DW1T1G
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 75°C −25°C 25°C hFE, DC CURRENT GAIN
1000 VCE = 10 V 75°C 100 TA = −25°C
0.1
25°C
0.01
10
0.001
0
30 20 40 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 52. VCE(sat) versus IC
Figure 53. DC Current Gain
3.5 3 Cob, CAPACITANCE (pF) 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10 1 0.1 0.01 TA = −25°C VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 75°C 25°C
0.001
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
100 Vin, INPUT VOLTAGE (VOLTS)
10 TA = −25°C
1 75°C
25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 56. Input Voltage versus Output Current http://onsemi.com
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135DW1T1G
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN
1000 VCE = 10 V 75°C 100 TA = −25°C
0.1 25°C
25°C
10
0.001
0
30 20 40 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 57. VCE(sat) versus IC
Figure 58. DC Current Gain
12 10 8 6 4 2 0 f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10 1 0.1 0.01
75°C 25°C
Cob, CAPACITANCE (pF)
TA = −25°C
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0
5
10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 59. Output Capacitance
Figure 60. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
1
TA = −25°C 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 61. Input Voltage versus Output Current http://onsemi.com
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1G
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1
1000 75°C 100 TA = −25°C
25°C
0.1 −25°C 25°C 75°C
10
0.01
IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7
VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
1.2 Cob, CAPACITANCE (pF) 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 25°C 10 75°C
TA = −25°C
1 VO = 5 V VO = 5 V 0.1 0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 64. Output Capacitance
Figure 65. Output Current versus Input Voltage
100 Vin, INPUT VOLTAGE (VOLTS)
10
25°C
TA = −25°C
1
75°C 0 2
VO = 0.2 V 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 20
Figure 66. Input Voltage versus Output Current http://onsemi.com
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MUN5111DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137DW1T1G
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1
1000
75°C TA = −25°C 25°C
TA = −25°C 0.1 75°C
100
25°C 0.01 IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50
VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100
Figure 67. VCE(sat) versus IC
Figure 68. DC Current Gain
1.4 Cob, CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C
100 10 1 0.1 0.01 25°C
75°C TA = −25°C
VO = 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
11
Vin, INPUT VOLTAGE (VOLTS)
Figure 69. Output Capacitance
Figure 70. Output Current versus Input Voltage
100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V
10
TA = −25°C
75°C
1
25°C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25
Figure 71. Input Voltage versus Output Current http://onsemi.com
19
MUN5111DW1T1G Series
PACKAGE DIMENSIONS
SC−88 (SOT−363) CASE 419B−02 ISSUE W
D e
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. DIM A A1 A3 b C D E e L HE MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000
6
5
4
HE
1 2 3
−E−
b 6 PL 0.2 (0.008)
M
E
M
A3 C A
STYLE 1: PIN 1. 2. 3. 4. 5. 6.
A1
L
SOLDERING FOOTPRINT*
0.50 0.0197
0.65 0.025 0.65 0.025
0.40 0.0157 1.9 0.0748
SCALE 20:1
mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MUN5111DW1T1/D