MUN5215DW1T1G

MUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1G series, two BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium. Features http://onsemi.com (3) R1 Q1 Q2 R2 (4) R1 (5) (6) (2) R2 (1) • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 SOT−363 CASE 419B STYLE 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc MARKING DIAGRAM 6 xx M G G 1 xx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Symbol PD Max 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 670 (Note 1) 490 (Note 2) Max 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) 493 (Note 1) 325 (Note 2) 188 (Note 1) 208 (Note 2) − 55 to +150 Unit mW mW/°C °C/W RqJA Symbol PD Unit mW mW/°C °C/W °C/W °C DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. RqJA RqJL TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 8 1 Publication Order Number: MUN5211DW1T1/D MUN5211DW1T1G Series DEVICE MARKING AND RESISTOR VALUES Device MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G MUN5236DW1T1G MUN5237DW1T1G Package SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) Marking 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M 7N 7P R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 47 100 22 Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MUN5211DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G MUN5236DW1T1G MUN5237DW1T1G ICBO ICEO IEBO − − − − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 − − nAdc nAdc mAdc Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc http://onsemi.com 3 MUN5211DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Characteristic ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G MUN5236DW1T1G MUN5237DW1T1G MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5214DW1T1G MUN5235DW1T1G MUN5236DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5237DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5211DW1T1G MUN5212DW1T1G MUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G MUN5213DW1T1G MUN5236DW1T1G MUN5237DW1T1G hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Vdc 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 4 MUN5211DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic ON CHARACTERISTICS (Note 5) (Continued) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5214DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G MUN5230DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5231DW1T1G MUN5232DW1T1G MUN5236DW1T1G MUN5237DW1T1G MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G MUN5236DW1T1G MUN5237DW1T1G VOH Vdc 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 − − − − − − − − − − − − − − 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 − − − − − − − − − − − − − − 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 kW Symbol Min Typ Max Unit (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor R1 Resistor Ratio MUN5211DW1T1G/MUN5212DW1T1G/ MUN5213DW1T1G/MUN5236DW1T1G MUN5214DW1T1G MUN5215DW1T1G/MUN5216DW1T1G MUN5230DW1T1G/MUN5231DW1T1G/MUN5232DW1T1G MUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G MUN5237DW1T1G 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% R1/R2 ALL MUN5211DW1T1G SERIES DEVICES 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 − 50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 5 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1G 1 IC/IB = 10 TA = -25°C 25°C 0.1 75°C 1000 h FE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C -25°C 100 VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = -25°C C ob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 6 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212DW1T1G 1 IC/IB = 10 25°C 75°C h FE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75°C 25°C -25°C 100 VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 0.1 TA = -25°C 0.01 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 IC, COLLECTOR CURRENT (mA) 75°C 25°C TA = -25°C 3 C ob , CAPACITANCE (pF) 10 1 2 0.1 1 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 7 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1G 10 IC/IB = 10 1000 h FE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C -25°C 100 VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 TA = -25°C 0.1 25°C 75°C 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 f = 1 MHz IE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = -25°C 0.8 C ob , CAPACITANCE (pF) 0.6 1 0.4 0.1 0.2 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 8 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5214DW1T1G 1 VCE(sat) , COLLECTOR VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25°C 25°C 75°C 300 VCE = 10 250 25°C 200 -25°C 150 100 50 0 TA = 75°C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C IC, COLLECTOR CURRENT (mA) 25°C -25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 9 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215DW1T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01 TA = −25°C 25°C 1000 75°C VCE = 10 V 0.1 25°C 100 10 0.001 0 30 20 40 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C 10 1 0.1 0.01 TA = −25°C 25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 26. Input Voltage versus Output Current http://onsemi.com 10 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5216DW1T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = −25°C 100 25°C 1000 75°C VCE = 10 V 0.1 −25°C 0.01 75°C 25°C 10 0.001 0 30 20 40 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 10 1 0.1 0.01 75°C 25°C TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 1 TA = −25°C 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 11 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230DW1T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN 100 0.1 25°C 10 75°C 25°C TA = −25°C VCE = 10 V 0.001 0 30 10 20 40 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 10 1 0.1 0.01 75°C 25°C TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 12 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5231DW1T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN 100 0.1 25°C 10 75°C 25°C TA = −25°C VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.001 0 30 10 20 40 IC, COLLECTOR CURRENT (mA) 50 Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C 100 75°C 10 1 0.1 0.01 TA = −25°C 25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 13 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232DW1T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01 75°C 1000 VCE = 10 V 0.1 25°C 100 10 TA = −25°C 25°C 0.001 0 30 10 20 40 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 42. VCE(sat) versus IC Figure 43. DC Current Gain 6 5 4 3 2 1 0 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 10 1 0.1 0.01 TA = −25°C 75°C 25°C Cob, CAPACITANCE (pF) VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 46. Input Voltage versus Output Current http://onsemi.com 14 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233DW1T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V 75°C 100 TA = −25°C 0.1 −25°C 0.01 75°C 25°C 25°C 10 0.001 0 5 20 10 15 25 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 47. VCE(sat) versus IC Figure 48. DC Current Gain 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 10 1 75°C 25°C TA = −25°C 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 49. Output Capacitance Figure 50. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 51. Input Voltage versus Output Current http://onsemi.com 15 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5234DW1T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C 100 TA = −25°C 1000 VCE = 10 V 0.1 75°C −25°C 25°C 0.01 25°C 10 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 52. VCE(sat) versus IC Figure 53. DC Current Gain TBD IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) TBD VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) TBD IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage versus Output Current http://onsemi.com 16 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235DW1T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN 1000 75°C 100 VCE = 10 V 0.1 25°C TA = −25°C 25°C 10 0.001 0 30 10 20 40 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 57. VCE(sat) versus IC Figure 58. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 10 1 0.1 0.01 25°C 75°C TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 59. Output Capacitance Figure 60. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 75°C 1 25°C TA = −25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 61. Input Voltage versus Output Current http://onsemi.com 17 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5236DW1T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 −25°C hFE, DC CURRENT GAIN 75°C 0.1 25°C 1000 75°C 100 TA = −25°C VCE = 10 V 25°C 0.01 10 0.001 0 30 10 20 40 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 62. VCE(sat) versus IC Figure 63. DC Current Gain 5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4.5 Cob, CAPACITANCE (pF) 100 10 1 0.1 0.01 TA = −25°C 75°C 25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 64. Output Capacitance Figure 65. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 10 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 66. Input Voltage versus Output Current http://onsemi.com 18 MUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5237DW1T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 −25°C 75°C 25°C 1000 VCE = 10 V hFE, DC CURRENT GAIN 75°C 100 TA = −25°C 0.1 25°C 0.01 10 0.001 0 30 10 20 40 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 67. VCE(sat) versus IC Figure 68. DC Current Gain 5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4.5 Cob, CAPACITANCE (pF) 100 10 1 0.1 0.01 75°C 25°C TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 69. Output Capacitance Figure 70. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 10 TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 71. Input Voltage versus Output Current http://onsemi.com 19 MUN5211DW1T1G Series PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. DIM A A1 A3 b C D E e L HE MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 6 5 4 HE 1 2 3 −E− b 6 PL 0.2 (0.008) M E M A3 C A STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 SOLDERING FOOTPRINT* L 0.50 0.0197 A1 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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