MUR1510

MUR1510G, MUR1515G, MUR1520G, MUR1540G, MUR1560G, MURF1560G, SUR81520G, SUR81560G Switch-mode Power Rectifiers http://onsemi.com These state−of−the−art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • • • • • • Ultrafast 35 and 60 Nanosecond Recovery Time 175°C Operating Junction Temperature High Voltage Capability to 600 V ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B Low Forward Drop Low Leakage Specified @ 150°C Case Temperature Current Derating Specified @ Both Case and Ambient Temperatures SUR8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable All Packages are Pb−Free* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • ULTRAFAST RECTIFIERS 15 AMPERES, 100−600 VOLTS 1 4 3 4 1 1 3 TO−220AC CASE 221B STYLE 1 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds A Y WW G U15xx KA © Semiconductor Components Industries, LLC, 2014 February, 2014 − Rev. 10 1 3 TO−220 FULLPAK CASE 221AG STYLE 1 MARKING DIAGRAMS AY WWG U15xx KA *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 4 AYWWG MURF1560 KA = = = = = Assembly Location Year Work Week Pb−Free Package Device Code xx = 10, 15, 20, 40 or 60 = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Publication Order Number: MUR1520/D MUR1510G, MUR1515G, MUR1520G, MUR1540G, MUR1560G, MURF1560G, SUR81520G, SUR81560G MAXIMUM RATINGS MUR/SUR8 Symbol 1510 1515 1520 1540 1560 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 150 200 400 600 V Average Rectified Forward Current (Rated VR) IF(AV) 15 @ TC = 150°C 15 @ TC = 145°C A Peak Rectified Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 30 @ TC = 150°C 30 @ TC = 145°C A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Rating Operating Junction Temperature and Storage Temperature Range 200 150 TJ, Tstg A −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value MUR1510 Series: Thermal Resistance Junction−to−Case Junction−to−Ambient RqJC RqJA 1.5 73 MURF1560: Thermal Resistance Junction−to−Case Junction−to−Ambient RqJC RqJA 4.25 75 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) (iF = 15 A, TC = 150°C) (iF = 15 A, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TC = 150°C) (Rated DC Voltage, TC = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) trr 1510 1515 1540 1560 0.85 1.05 1.12 1.25 1.20 1.50 500 10 500 10 1000 10 35 1520 60 Unit V mA ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MUR1510G, MUR1515G, MUR1520G, MUR1540G, MUR1560G, MURF1560G, SUR81520G, SUR81560G MUR1510G, MUR1515G, MUR1520G, SUR81520G 100 100°C 70 25°C 50 30 TJ = 150°C 20 10 100°C 5 2 1 0.5 25°C 0.2 0.1 0.05 7.0 0.02 0.01 0 40 20 5.0 60 100 80 120 160 140 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RqJA = 16°C/W As Obtained From A Small TO-220 Heatsink Square Wave 6.0 dc Square Wave RqJA = 60°C/W As Obtained in Free Air, No Heat Sink 2.0 0 0 20 10 Square Wave 8.0 6.0 4.0 Rated Voltage Applied 2.0 0 140 160 150 170 Figure 3. Current Derating, Case 10 4.0 dc 12 Figure 1. Typical Forward Voltage dc 8.0 14 TC, CASE TEMPERATURE (°C) 14 12 16 vF, INSTANTANEOUS VOLTAGE (VOLTS) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 0.2 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 50 10 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 20 IR, REVERSE CURRENT (m A) 100 TJ = 150°C 40 60 80 100 120 140 160 180 200 180 16 I (Resistive Load) PK = π IAV 14 I (Capacitive Load) PK =5.0 IAV 12 dc 10 10 8.0 20 6.0 Square Wave 4.0 TJ = 125°C 2.0 0 0 2.0 4.0 6.0 8.0 10 12 14 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Ambient Figure 5. Power Dissipation http://onsemi.com 3 16 MUR1510G, MUR1515G, MUR1520G, MUR1540G, MUR1560G, MURF1560G, SUR81520G, SUR81560G MUR1540G 100 100 TJ = 150°C 50 IR, REVERSE CURRENT (m A) 70 50 100°C TJ = 150°C 25°C 30 5 25°C 2 1 0.5 10 7.0 0.02 0.01 0 100 50 5.0 150 200 250 300 400 350 450 500 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Reverse Current 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 Square Wave 8.0 6.0 4.0 Rated Voltage Applied 2.0 0 140 160 150 170 Figure 8. Current Derating, Case dc 10 RqJA = 16°C/W As Obtained From A Small TO-220 Heatsink 8.0 Square Wave 6.0 4.0 dc Square Wave RqJA = 60°C/W As Obtained in Free Air, No Heat Sink 0 20 dc 12 Figure 6. Typical Forward Voltage 12 0 14 TC, CASE TEMPERATURE (°C) 14 2.0 16 vF, INSTANTANEOUS VOLTAGE (VOLTS) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 0.2 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 100°C 0.2 0.1 0.05 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 20 20 10 40 60 80 100 120 140 160 180 200 16 (Resistive Load) 14 IPK =π IAV dc I (Capacitive Load) PK =5.0 IAV 12 180 10 10 Square Wave 20 8.0 6.0 TJ = 125°C 4.0 2.0 0 0 2.0 4.0 6.0 8.0 10 12 14 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Current Derating, Ambient Figure 10. Power Dissipation http://onsemi.com 4 16 MUR1510G, MUR1515G, MUR1520G, MUR1540G, MUR1560G, MURF1560G, SUR81520G, SUR81560G 200 100 100 25°C 10 1 TJ = 150°C 50 IR, REVERSE CURRENT (m A) TJ = 150°C 100°C 20 10 100°C 5 2 1 0.5 25°C 0.2 0.1 0.05 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.02 150 1.6 300 350 400 450 500 550 Figure 11. Typical Forward Voltage Figure 12. Typical Reverse Current 14 dc 12 Square Wave 10 8.0 6.0 4.0 Rated Voltage Applied 2.0 0 140 160 150 170 180 dc 9.0 8.0 6.0 5.0 dc 4.0 3.0 Square Wave RqJA = 60°C/W 1.0 As Obtained in Free Air, No Heat Sink 0 0 20 40 60 80 100 120 2.0 I FSM , NON-REPETITIVE SURGE CURRENT (A) Square Wave 8.0 I (Resistive-Inductive Load) PK = π IAV 6.0 4.0 TJ = 125°C 2.0 0 2.0 4.0 6.0 8.0 180 200 10,000 dc 20 10 160 Figure 14. Current Derating, Ambient 10 12 140 TA, AMBIENT TEMPERATURE (°C) I (Capacitive Load) PK =5.0 IAV 14 RqJA = 16°C/W As Obtained From A Small TO-220 Heatsink Square Wave 7.0 Figure 13. Current Derating, Case 16 600 650 10 TC, CASE TEMPERATURE (°C) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 250 VR, REVERSE VOLTAGE (VOLTS) 16 0 200 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) MUR1560G, MURF1560G, SUR81560G 10 12 14 1,000 100 10 16 100 1,000 10,000 tp, SQUARE WAVE PULSE DURATION (ms) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 16. Typical Non−Repetitive Surge Current Figure 15. Power Dissipation * Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table. http://onsemi.com 5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MUR1510G, MUR1515G, MUR1520G, MUR1540G, MUR1560G, MURF1560G, SUR81520G, SUR81560G 1.0 D = 0.5 0.5 0.2 0.1 0.1 0.05 0.01 ZqJC(t) = r(t) RqJC RqJC = 1.5°C/W MAX P(pk) 0.05 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) - TC = P(pk) ZqJC(t) t1 t2 SINGLE PULSE 0.02 DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 t, TIME (ms) Figure 17. Thermal Response r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) (°C/W) 10 D = 0.5 1.0 0.1 0.2 0.1 0.05 0.02 P(pk) 0.01 0.01 t1 SINGLE PULSE 0.001 0.000001 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 t, TIME (s) 1.0 0.1 ZqJC(t) = r(t) RqJC RqJC = 1.6°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 100 1000 Figure 18. Thermal Response, (MURF1560G) Junction−to−Case (RqJC) r(t), TRANSIENT THERMAL RESPONSE (NORMALIZED) (°C/W) 100 10 D = 0.5 0.2 0.1 0.05 0.02 1.0 0.01 P(pk) 0.1 0.01 0.001 0.000001 t1 SINGLE PULSE 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 t, TIME (s) 0.1 1.0 ZqJC(t) = r(t) RqJC RqJC = 1.6°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 Figure 19. Thermal Response, (MURF1560G) Junction−to−Ambient (RqJA) http://onsemi.com 6 100 1000 MUR1510G, MUR1515G, MUR1520G, MUR1540G, MUR1560G, MURF1560G, SUR81520G, SUR81560G 1000 C, CAPACITANCE (pF) 500 TJ = 25°C 200 100 50 20 10 1.0 2.0 10 5.0 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 20. Typical Capacitance ORDERING INFORMATION Package Shipping† MUR1510G TO−220AC (Pb−Free) 50 Units / Rail MUR1515G TO−220AC (Pb−Free) 50 Units / Rail MUR1520G TO−220AC (Pb−Free) 50 Units / Rail SUR81520G TO−220AC (Pb−Free) 50 Units / Rail MUR1540G TO−220AC (Pb−Free) 50 Units / Rail MUR1560G TO−220AC (Pb−Free) 50 Units / Rail SUR81560G TO−220AC (Pb−Free) 50 Units / Rail MURF1560G TO−220FP (Pb−Free) 50 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPACK, 2−LEAD CASE 221AG ISSUE B A E B P E/2 0.14 SCALE 1:1 M B A A H1 M SEATING PLANE A1 4 Q D C NOTE 3 1 2 3 L L1 3X 3X b2 c b 0.25 M B A M C A2 e SIDE VIEW e1 TOP VIEW A NOTE 6 NOTE 6 D DATE 27 AUG 2015 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. MILLIMETERS DIM MIN MAX A 4.30 4.70 A1 2.50 2.90 A2 2.50 2.90 b 0.54 0.84 b2 1.10 1.40 c 0.49 0.79 D 14.22 15.88 E 9.65 10.67 e 2.54 BSC e1 5.08 BSC H1 6.40 6.90 L 12.70 14.73 L1 --2.80 P 3.00 3.40 Q 2.80 3.20 GENERIC MARKING DIAGRAM* H1 D XX XXXXXXXXX AWLYWWG SECTION A−A A ALTERNATE CONSTRUCTION SECTION D−D 1 A WL Y WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON52563E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−220 FULLPACK, 2−LEAD PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220, 2−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q SCALE 1:1 F S T DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G STYLE 1: PIN 1. 2. 3. 4. DOCUMENT NUMBER: DESCRIPTION: 98ASB42149B TO−220, 2−LEAD CATHODE N/A ANODE CATHODE DATE 12 APR 2013 STYLE 2: PIN 1. 2. 3. 4. INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 ANODE N/A CATHODE ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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