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MUR2020R

MUR2020R

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO220-2

  • 描述:

    DIODE GEN PURP 200V 20A TO220AC

  • 数据手册
  • 价格&库存
MUR2020R 数据手册
MUR2020R SWITCHMODE Ultrafast Power Rectifier Features and Benefits • • • • • • Reverse Polarity Rectifier Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature These are Pb−Free Devices* http://onsemi.com ULTRAFAST RECTIFIER 20 AMPERES, 200 VOLTS trr = 95 ns Applications 1 • Power Supply – Output Rectification • Power Management • Instrumentation 4 3 4 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94, V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C TO−220AC CASE 221B STYLE 2 1 3 MARKING DIAGRAM *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. AY WWG U2020R AK A Y WW G AK = Assembly Location = Year = Work Week = Pb−Free Package = Diode Polarity ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2013 July, 2013 − Rev. 5 1 Device Package Shipping MUR2020RG TO−220AC (Pb−Free) 50 Units / Rail Publication Order Number: MUR2020R/D MUR2020R MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 200 V Average Rectified Forward Voltage, (Rated VR), TC = 125°C IF(AV) 20 A Peak Repetitive Forward Current (Rated VR), TC = 125°C IFRM 40 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 250 A TJ, Tstg −65 to +175 °C Operating Junction Temperature and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit °C/W Maximum Thermal Resistance, Junction−to−Case Min. Pad RqJC 2.0 Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 70 Min Typical Max − − 0.97 0.79 1.1 1.0 − − 0.1 0.225 50 1.0 − − − − 95 75 ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 1) (iF = 20 Amps, Tj = 25°C) (iF = 20 Amps, Tj = 150°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, Tj = 25°C) (Rated dc Voltage, Tj = 150°C) iR Maximum Reverse Recovery Time (IF = 1.0 Amps, di/dt = 50 A/ms) (IF = 1.0 Amps, di/dt = 100 A/ms) trr 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. http://onsemi.com 2 Unit V mA mA ns MUR2020R TYPICAL CHARACTERISTICS PF(AV), AVERAGE POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD 40 dc 30 TJ = 175°C 20 Square Wave 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 0 0 100 50 150 200 dc 10 5 0 0 5 10 15 20 Figure 1. Current Derating Figure 2. Power Dissipation 25 1000.00 IR, REVERSE CURRENT (mA) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) Square Wave 15 IF(AV), AVERAGE FORWARD CURRENT (AMPS) VF @ 175°C 1 0.5 0.7 0.9 1.1 Ir @ 175°C Ir @ 100°C 100.00 VF @ 25°C VF @ 100°C 1.3 Ir @ 25°C 10.00 1.00 1.5 0 50 100 150 VF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Maximum Forward Voltage Figure 4. Maximum Reverse Current 200 1000.000 100 IR, REVERSE CURRENT (mA) VF @ 175°C VF @ 25°C 1 VF @ 100°C 0.5 0.7 Ir @ 175°C 100.000 10 0.1 0.3 TJ = 175°C TC, CASE TEMPERATURE (°C) 100 0.1 0.3 20 0.9 1.1 1.3 1.000 Ir @ 25°C 0.100 0.010 0.001 1.5 Ir @ 100°C 10.00 0 50 100 150 VF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Forward Voltage Figure 6. Typical Reverse Current http://onsemi.com 3 200 MUR2020R TYPICAL CHARACTERISTICS 10000 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 TJ = 25°C 1000 100 0.1 1 10 1000 TJ = 25°C 100 0.1 100 1 VR, REVERSE VOLTAGE (VOLTS) 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Maximum Capacitance Rjc(t), TRANSIENT THERMAL RESISTANCE (°C/W) 10 Figure 8. Typical Capacitance 10 1 D = 0.5 0.1 0.1 0.05 ZqJC(t) = r(t) RqJC P(pk) 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) − TC = P(pk) ZqJC(t) t1 t2 0.01 DUTY CYCLE, D = t1/t2 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (s) Figure 9. Thermal Response http://onsemi.com 4 0.1 1 10 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220, 2−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q SCALE 1:1 F S T DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G STYLE 1: PIN 1. 2. 3. 4. DOCUMENT NUMBER: DESCRIPTION: 98ASB42149B TO−220, 2−LEAD CATHODE N/A ANODE CATHODE DATE 12 APR 2013 STYLE 2: PIN 1. 2. 3. 4. INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 ANODE N/A CATHODE ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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