MUR805G, MUR810G,
MUR815G, MUR820G,
MUR840G, MUR860G,
MURF860G, SUR8820G,
SUR8840G
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Switch-mode Power
Rectifiers
This series is designed for use in switching power supplies,
inverters and as free wheeling diodes.
ULTRAFAST RECTIFIERS
8.0 AMPERES, 50−600 VOLTS
Features
•
•
•
•
•
•
•
•
•
1
Ultrafast 25 and 50 Nanosecond Recovery Time
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Low Forward Voltage
Low Leakage Current
Reverse Voltage to 600 V
ESD Ratings:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 16,000 V)
SUR8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
4
3
TO−220AC
CASE 221B
STYLE 1
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds
TO−220 FULLPAK
CASE 221AG
STYLE 1
MARKING DIAGRAMS
AY
WWG
U8xx
KA
A
Y
WW
U8XX
G
KA
AYWWG
MURF860
KA
=
=
=
=
Assembly Location
Year
Work Week
Device Code
xx = 05, 10, 15, 20, 40, or 60
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 13
1
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Publication Order Number:
MUR820/D
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MAXIMUM RATINGS
MUR/SUR8
Symbol
805
810
815
820
840
860
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
150
200
400
600
V
Average Rectified Forward Current
Total Device, (Rated VR), TC = 150°C
IF(AV)
8.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 150°C
IFM
16
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
100
A
TJ, Tstg
−65 to +175
°C
Rating
Operating Junction Temperature and Storage Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
MUR/SUR8
Characteristic
Symbol
Maximum Thermal Resistance, Junction−to−Case
RqJC
Thermal Resistance, Junction−to−Case
MURF860
RqJC
Thermal Resistance, Junction−to−Ambient
RqJA
Thermal Resistance, Junction−to−Ambiente
MURF860
RqJA
805
810
815
820
840
860
3.0
2.0
Unit
°C/W
°C/W
4.75
73
°C/W
°C/W
75
ELECTRICAL CHARACTERISTICS
MUR/SUR8
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ = 150°C)
(Rated DC Voltage, TJ = 25°C)
iR
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
trr
805
810
815
0.895
0.975
820
840
860
1.00
1.30
1.20
1.50
250
5.0
500
10
35
25
60
50
Unit
V
mA
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MUR805G, MUR810G, MUR815G, MUR820G, SUR8820G
1000
100
IR, REVERSE CURRENT (m A)
70
50
20
10
100°C
1.0
25°C
0.1
10
0.01
7.0
0
20
60
80 100 120 140 160
VR, REVERSE VOLTAGE (VOLTS)
40
5.0
Figure 2. Typical Reverse Current*
3.0
2.0
TJ = 175°C
100°C
25°C
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
10
9.0
RATED VR APPLIED
8.0
dc
7.0
6.0
SQUARE WAVE
5.0
4.0
3.0
2.0
1.0
0
140
vF, INSTANTANEOUS VOLTAGE (VOLTS)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
10
SQUARE WAVE
8.0
6.0
4.0
dc
2.0
SQUARE WAVE
0
0
20
40
60
80
100
120
140
180
TC, CASE TEMPERATURE (°C)
RqJA = 16°C/W
RqJA = 60°C/W
(NO HEAT SINK)
dc
170
Figure 3. Current Derating, Case
14
12
160
150
Figure 1. Typical Forward Voltage
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
180 200
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
30
TJ = 175°C
100
160
180
200
10
9.0
TJ = 175°C
8.0
7.0
SQUARE WAVE
6.0
dc
5.0
4.0
3.0
2.0
1.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, Ambient
Figure 5. Power Dissipation
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3
9.0
10
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MUR840G, SUR8840G
100
1000
IR, REVERSE CURRENT (m A)
70
50
20
10
100°C
25°C
1.0
0.1
10
0.01
7.0
0
50
100
150 200 250 300 350 400
VR, REVERSE VOLTAGE (VOLTS)
5.0
TJ = 175°C
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
3.0
100°C
2.0
1.0
0.5
0.3
0.2
0.1
0.8
0.6
1.2
1.0
1.4
8.0
SQUARE WAVE
dc
SQUARE WAVE
0
0
20
6.0
SQUARE WAVE
5.0
4.0
3.0
2.0
1.0
0
140
150
160
40
60
80
100
120
140
160
180
200
10
9.0
TJ = 175°C
8.0
SQUARE WAVE
7.0
dc
6.0
5.0
4.0
3.0
2.0
1.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Current Derating, Ambient
Figure 10. Power Dissipation
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4
180
170
Figure 8. Current Derating, Case
dc
2.0
dc
7.0
Figure 6. Typical Forward Voltage
12
4.0
RATED VR APPLIED
8.0
TC, CASE TEMPERATURE (°C)
RqJA = 16°C/W
RqJA = 60°C/W
(NO HEAT SINK)
6.0
9.0
1.6
14
10
10
vF, INSTANTANEOUS VOLTAGE (VOLTS)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
0.4
450 500
Figure 7. Typical Reverse Current*
25°C
0.7
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
150°C
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
30
TJ = 175°C
100
9.0
10
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
1000
100
TJ = 150°C
IR, REVERSE CURRENT (m A)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
MUR860G, MURF860G
100°C
25°C
10
1
10
100°C
1.0
0.6
0.8
1.0
1.4
1.2
1.6
25°C
0.1
0.01
100
0.1
0.4
TJ = 150°C
100
1.8
200
vF, INSTANTANEOUS VOLTAGE (VOLTS)
300
500
400
VR, REVERSE VOLTAGE (VOLTS)
600
Figure 12. Typical Reverse Current*
Figure 11. Typical Forward Voltage
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
10
9.0
RATED VR APPLIED
8.0
dc
7.0
6.0
SQUARE WAVE
5.0
4.0
3.0
2.0
1.0
0
140
160
150
170
10
9.0
RqJA = 16°C/W
RqJA = 60°C/W
(NO HEAT SINK)
dc
8.0
7.0
6.0
SQUARE WAVE
5.0
4.0
dc
3.0
2.0
SQUARE WAVE
1.0
0
180
0
20
40
60
80
100
120
140
160
180 200
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 13. Current Derating, Case
Figure 14. Current Derating, Ambient
10,000
14
13
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
I FSM , NON-REPETITIVE SURGE CURRENT (A)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
SQUARE
WAVE
dc
TJ = 175°C
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
1,000
100
10
100
1,000
10,000
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
tp, SQUARE WAVE PULSE DURATION (ms)
Figure 15. Power Dissipation
Figure 16. Typical Non−Repetitive Surge
Current
* Typical performance based on a limited sample size. ON Semiconductor
does not guarantee ratings not listed in the Maximum Ratings table.
http://onsemi.com
5
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
1.0
D = 0.5
0.5
0.2
0.1
0.1
0.05
0.01
ZqJC(t) = r(t) RqJC
RqJC = 1.5°C/W MAX
P(pk)
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T1
TJ(pk) - TC = P(pk) ZqJC(t)
t1
t2
SINGLE PULSE
0.02
DUTY CYCLE, D = t1/t2
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1000
t, TIME (ms)
Figure 17. Thermal Response
r(t), TRANSIENT THERMAL RESPONSE
(NORMALIZED) (°C/W)
10
D = 0.5
1.0
0.1
0.2
0.1
0.05
0.02
P(pk)
0.01
0.01
t1
SINGLE PULSE
0.001
0.000001
0.00001
t2
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.01
t, TIME (s)
1.0
0.1
ZqJC(t) = r(t) RqJC
RqJC = 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
10
100
1000
r(t), TRANSIENT THERMAL RESPONSE
(NORMALIZED) (°C/W)
Figure 18. Thermal Response, (MURF860G) Junction−to−Case (RqJC)
100
10
D = 0.5
0.2
0.1
0.05
0.02
1.0
0.01
P(pk)
0.1
0.01
0.001
0.000001
t1
SINGLE PULSE
0.00001
t2
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.01
t, TIME (s)
0.1
1.0
ZqJC(t) = r(t) RqJC
RqJC = 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
10
Figure 19. Thermal Response, (MURF860G) Junction−to−Ambient (RqJA)
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6
100
1000
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
1000
C, CAPACITANCE (pF)
500
TJ = 25°C
200
100
50
20
10
1.0
2.0
10
5.0
20
VR, REVERSE VOLTAGE (V)
50
100
Figure 20. Typical Capacitance
ORDERING INFORMATION
Device
Package
Shipping
MUR805G
TO−220AC
(Pb−Free)
50 Units / Rail
MUR810G
TO−220AC
(Pb−Free)
50 Units / Rail
MUR815G
TO−220AC
(Pb−Free)
50 Units / Rail
MUR820G
TO−220AC
(Pb−Free)
50 Units / Rail
SUR8820G
TO−220AC
(Pb−Free)
50 Units / Rail
MUR840G
TO−220AC
(Pb−Free)
50 Units / Rail
SUR8840G
TO−220AC
(Pb−Free)
50 Units / Rail
MUR860G
TO−220AC
(Pb−Free)
50 Units / Rail
MURF860G
TO−220FP
(Pb−Free)
50 Units / Rail
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPACK, 2−LEAD
CASE 221AG
ISSUE B
A
E
B
P
E/2
0.14
SCALE 1:1
M
B A
A
H1
M
SEATING
PLANE
A1
4
Q
D
C
NOTE 3
1 2 3
L
L1
3X
3X
b2
c
b
0.25
M
B A
M
C
A2
e
SIDE VIEW
e1
TOP VIEW
A
NOTE 6
NOTE 6
D
DATE 27 AUG 2015
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
MILLIMETERS
DIM MIN
MAX
A
4.30
4.70
A1
2.50
2.90
A2
2.50
2.90
b
0.54
0.84
b2
1.10
1.40
c
0.49
0.79
D
14.22
15.88
E
9.65
10.67
e
2.54 BSC
e1
5.08 BSC
H1
6.40
6.90
L
12.70
14.73
L1
--2.80
P
3.00
3.40
Q
2.80
3.20
GENERIC
MARKING DIAGRAM*
H1
D
XX
XXXXXXXXX
AWLYWWG
SECTION A−A
A
ALTERNATE
CONSTRUCTION
SECTION D−D
1
A
WL
Y
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98AON52563E
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−220 FULLPACK, 2−LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220, 2−LEAD
CASE 221B−04
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
Q
SCALE 1:1
F
S
T
DIM
A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
4
A
1
U
3
H
K
L
R
D
J
G
STYLE 1:
PIN 1.
2.
3.
4.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42149B
TO−220, 2−LEAD
CATHODE
N/A
ANODE
CATHODE
DATE 12 APR 2013
STYLE 2:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.595
0.620
0.380
0.405
0.160
0.190
0.025
0.039
0.142
0.161
0.190
0.210
0.110
0.130
0.014
0.025
0.500
0.562
0.045
0.060
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
MILLIMETERS
MIN
MAX
15.11
15.75
9.65
10.29
4.06
4.82
0.64
1.00
3.61
4.09
4.83
5.33
2.79
3.30
0.36
0.64
12.70
14.27
1.14
1.52
2.54
3.04
2.04
2.79
1.14
1.39
5.97
6.48
0.000
1.27
ANODE
N/A
CATHODE
ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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