MUR880E

MUR8100E, MUR880E MUR8100E is a Preferred Device SWITCHMODEt Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability The MUR8100 and MUR880E diodes are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • 20 mJ Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching • • • • • • • • • Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Popular TO−220 Package Epoxy Meets UL 94 V−0 @ 0.125 in. Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 V Pb−Free Packages are Available* http://onsemi.com ULTRAFAST RECTIFIERS 8.0 A, 800 V − 1000 V 1 4 3 4 TO−220AC CASE 221B 1 3 Mechanical Characteristics: MARKING DIAGRAM • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds AY WWG U8xxxE KA A Y WW G U8xxxE KA = = = = = Assembly Location Year Work Week Pb−Free Package Device Code xxx = 100 or 80 = Diode Polarity ORDERING INFORMATION Device Package Shipping MUR8100E TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail MUR8100EG MUR880E MUR880EG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 June, 2008 − Rev. 4 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MUR8100E/D MUR8100E, MUR880E MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR880E MUR8100E Average Rectified Forward Current (Rated VR, TC = 150°C) Total Device VRRM VRWM VR Value Unit V 800 1000 IF(AV) 8.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFM 16 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A TJ, Tstg −65 to +175 °C Operating Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction−to−Case Symbol Value Unit RqJC 2.0 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 8.0 A, TC = 150°C) (iF = 8.0 A, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TC = 100°C) (Rated DC Voltage, TC = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A) trr Controlled Avalanche Energy (See Test Circuit in Figure 6) WAVAL 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 1.5 1.8 500 25 100 75 20 V mA ns mJ MUR8100E, MUR880E 100 10,000 70 IR, REVERSE CURRENT ( mA) 1000 50 30 10 100 175°C 150°C 10 100°C 1.0 0.1 TJ = 25°C 0.01 TJ = 175°C 7.0 0 100°C 5.0 200 400 25°C 600 800 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* 3.0 2.0 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 20 1.0 0.7 0.5 0.3 0.2 0.1 0.6 0.8 1.0 1.2 1.4 1.6 dc 6.0 SQUARE WAVE 5.0 4.0 3.0 2.0 1.0 0 160 150 170 Figure 1. Typical Forward Voltage Figure 3. Current Derating, Case 8.0 7.0 dc 6.0 SQUARE WAVE 4.0 3.0 dc 2.0 SQUARE WAVE 0 20 7.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) RqJA = 16°C/W RqJA = 60°C/W (No Heat Sink) 0 8.0 TC, CASE TEMPERATURE (°C) 9.0 1.0 RATED VR APPLIED 9.0 140 10 5.0 10 1.8 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 0.4 I F(AV) , AVERAGE FORWARD CURRENT (AMPS) * The curves shown are typical for the highest voltage device in the voltage * grouping. Typical reverse current for lower voltage selections can be * estimated from these same curves if VR is sufficiently below rated VR. 40 60 80 100 120 140 160 180 200 180 14 TJ = 175°C 12 SQUARE WAVE 10 dc 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Ambient Figure 5. Power Dissipation http://onsemi.com 3 9.0 10 MUR8100E, MUR880E +VDD IL 40 mH COIL BVDUT VD ID MERCURY SWITCH ID IL DUT S1 VDD t0 Figure 6. Test Circuit ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 V BV DUT DD Ǔ t2 t Figure 7. Current−Voltage Waveforms The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in EQUATION (1): t1 breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the MUR8100E in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. 500V 50mV CH1 CH2 A 20ms 953 V VERT CHANNEL 2: IL 0.5 AMPS/DIV. CHANNEL 1: VDUT 500 VOLTS/DIV. EQUATION (2): 2 W [ 1 LI LPK AVAL 2 TIME BASE: 20 ms/DIV. 1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF Figure 8. Current−Voltage Waveforms http://onsemi.com 4 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MUR8100E, MUR880E 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.1 0.1 0.07 0.05 P(pk) 0.05 0.01 t1 0.03 0.02 0.01 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) Figure 9. Thermal Response 1000 C, CAPACITANCE (pF) TJ = 25°C 300 100 30 10 1.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 10. Typical Capacitance SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. http://onsemi.com 5 ZqJC(t) = r(t) RqJC RqJC = 1.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 100 100 200 500 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220, 2−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q SCALE 1:1 F S T DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G STYLE 1: PIN 1. 2. 3. 4. DOCUMENT NUMBER: DESCRIPTION: 98ASB42149B TO−220, 2−LEAD CATHODE N/A ANODE CATHODE DATE 12 APR 2013 STYLE 2: PIN 1. 2. 3. 4. INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 ANODE N/A CATHODE ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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