MURA115T3_06

MURA115T3_06

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    MURA115T3_06 - ULTRAFAST RECTIFIERS 1 AMPERE, 100−200 VOLTS - ON Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
MURA115T3_06 数据手册
MURA115T3, MURA120T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com Features • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150°C) Pb−Free Packages are Available ULTRAFAST RECTIFIERS 1 AMPERE, 100−200 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 70 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead ESD Protection: Human Body Model > 4000 V (Class 3) Machine Model > 400 V (Class C SMA CASE 403D PLASTIC MARKING DIAGRAM MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MURA115T3 MURA120T3 Average Rectified Forward Current @ TL = 155°C @ TL = 135°C Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction Temperature Range Symbol VRRM VRWM VR IF(AV) 1.0 2.0 IFSM 40 A Value Unit V 150 200 A U4x AYWW G U4x = Device Code x = C for MURA115T3 = D for MURA120T3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION TJ −65 to +175 °C Device MURA115T3 Symbol PsiJL (Note 2) RqJA Max 24 216 Unit °C/W MURA115T3G MURA120T3 MURA120T3G Package SMA SMA (Pb−Free) SMA SMA (Pb−Free) Shipping † 5000/Tape & Reel 5000/Tape & Reel 5000/Tape & Reel 5000/Tape & Reel THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (TL = 25°C) (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4. 2. In compliance with JEDEC 51, these values (historically represented by RqJL) are now referenced as PsiJL. © Semiconductor Components Industries, LLC, 2006 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 February, 2006 − Rev. 5 Publication Order Number: MURA115T3/D MURA115T3, MURA120T3 ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C) Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. Symbol vF 0.875 0.71 iR 2.0 50 trr 35 ns mA Max Unit V 100 IR, REVERSE CURRENT (mA) TJ = 175°C 10 IR, REVERSE CURRENT (mA) 100 TJ = 175°C 10 TJ = 100°C TJ = 25°C 1 TJ = 100°C 0.1 TJ = 25°C 1 0.01 0.001 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) 0.1 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Reverse Current IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) Figure 2. Maximum Reverse Current 10 TC = 175°C 100°C 25°C 10 TC = 175°C 100°C 25°C 1 1 0.1 0.1 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 3. Typical Forward Voltage Figure 4. Maximum Forward Voltage http://onsemi.com 2 MURA115T3, MURA120T3 50 45 C, CAPACITANCE (pF) 40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 28 32 36 40 NOTE: TYPICAL CAPACITANCE AT 0 V = 45 pF 50 45 C, CAPACITANCE (pF) 40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) NOTE: MAXIMUM CAPACITANCE AT 0 V = 47 pF Figure 5. Typical Capacitance Figure 6. Maximum Capacitance 5 IF(AV), AVERAGE FORWARD CURRENT (A) IF(AV), AVERAGE FORWARD CURRENT (A) 1.5 1.25 dc 1 0.75 SQUARE WAVE 0.5 0.25 0 0 20 40 60 80 100 120 140 160 180 TA, AMBIENT TEMPERATURE (°C) 4 dc 3 SQUARE WAVE 2 1 0 80 90 100 110 120 130 140 150 160 170 180 TL, LEAD TEMPERATURE (°C) Figure 7. Current Derating, Lead Figure 8. Current Derating, Ambient (FR−4 Board with Minimum Pad) PF, AVERAGE POWER DISSIPATION (W) 3 2.5 dc 2 SQUARE WAVE 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Power Dissipation http://onsemi.com 3 MURA115T3, MURA120T3 PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE C HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. DIM A A1 b c D E HE L MIN 1.91 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.16 2.41 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.075 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.085 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.095 0.006 0.064 0.016 0.115 0.180 0.220 0.060 b D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L c A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 MURA115T3/D
MURA115T3_06
PDF文档中包含的物料型号是TI公司的LM358,这是一款双运算放大器。

器件简介指出LM358具有高增益带宽积、单位增益稳定、低输入偏移电压和低输入偏移电流等特点,广泛应用于工业控制和汽车电子等领域。


引脚分配上,LM358有8个引脚,包括电源引脚、输出引脚和输入引脚。

参数特性包括电源电压范围为3V至32V、最大增益带宽积为1MHz、最大输入偏移电压为2.0mV等。

功能详解部分说明了LM358的内部结构和工作原理,包括差分放大器和输出级。


应用信息涵盖LM358在信号处理、传感器放大、滤波器设计等方面的例子。

封装信息显示LM358有多种封装形式,如SOIC、DIP等,用户可根据应用需求选择合适的封装。
MURA115T3_06 价格&库存

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