MURH840CTG

MURH840CTG Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 8 A Total (4 A Per Diode Leg) These are Pb−Free Devices* www.onsemi.com ULTRAFAST RECTIFIER 8.0 AMPERES, 400 VOLTS trr = 28 ns Applications • Power Supply − Output Rectification • Power Management • Instrumentation 1 2, 4 3 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C 4 TO−220AB CASE 221A 1 2 3 MARKING DIAGRAM AYWW UH840G AKA A = Assembly Location Y = Year WW = Work Week UH840 = Device Code G = Pb−Free Package AKA = Diode Polarity ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 7 1 Device Package Shipping MURH840CTG TO−220 (Pb−Free) 50 Units/Rail Publication Order Number: MURH840CT/D MURH840CTG MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 400 V Average Rectified Forward Current (TC = 155°C) Per Leg Total Device IF(AV) A 4.0 8.0 Peak Repetitive Forward Current per Diode Leg (Square Wave, 20 kHz, TC = 149°C) IFM 8.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Controlled Avalanche Energy WAVAL 20 mJ Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Conditions Symbol Max Unit Maximum Thermal Resistance, Junction−to−Case Characteristic Min. Pad RqJC 3.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 60 Min Typical Max − − 1.12 1.45 1.9 2.2 − − 300 4.0 500 10 − − 28 ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) (iF = 4.0 A, Tj = 150°C) (iF = 4.0 A, Tj = 25°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, Tj = 150°C) (Rated dc Voltage, Tj = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) trr Unit V mA ns 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 175°C 150°C 10 25°C 100°C 1.0 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 3.2 Figure 1. Typical Forward Voltage 100 150°C 10 25°C 100°C 1.0 0.1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) www.onsemi.com 2 175°C Figure 2. Maximum Forward Voltage I F(AV) , AVERAGE FORWARD CURRENT (AMPS) MURH840CTG IR, REVERSE CURRENT (A) μ 1000 500 TJ = 150°C 200 100 50 20 10 100°C 5 25°C 2 1 0.5 0.2 0.1 0 50 100 150 200 250 300 350 400 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current, Per Leg 7.0 6.0 DC 5.0 4.0 RqJA = 16°C/W SQUARE WAVE 3.0 2.0 DC 1.0 SQUARE WAVE RqJA = 60°C/W, NO HEATSINK 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) 150 175 Figure 4. Forward Current Derating, Ambient, Per Leg 1000 8.0 DC C, CAPACITANCE (pF) 6.0 SQUARE WAVE 4.0 2.0 0 120 130 140 150 160 TC, CASE TEMPERATURE (°C) 170 100 10 1 0.01 180 Figure 5. Current Derating, Case, Per Leg PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD CURRENT (A) 8.0 60 56 52 48 44 40 36 32 28 24 20 16 12 8.0 4.0 0 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance, Per Leg TJ = 175°C SQUARE WAVE DC 0 2.0 4.0 6.0 8.0 10 12 14 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Power Dissipation, Per Leg www.onsemi.com 3 16 100 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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