MURHS160T3G

DATA SHEET www.onsemi.com 600 V, 1.0 A Ultrafast Rectifier MURHS160T3, NRVUHS160V, SURHS8160 ULTRAFAST RECTIFIER 1.0 AMPERES 600 VOLTS Features and Benefits • • • • • • Ultrafast 35 Nanosecond Recovery Times 175°C Operating Junction Temperature High Temperature Glass Passivated Junction High Voltage Capability to 600 V NRVUHS and SURHS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant SMB CASE 403A PLASTIC MARKING DIAGRAM Applications ALYWW UH16G G • Power Supplies • Inverters • Free Wheeling Diodes Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TL = 145°C) IF(AV) 1.0 A Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 15 A TJ, Tstg −65 to +175 °C Operating Junction and Storage Temperature Range ESD Ratings: Charged Device Model Human Body Model = 3B 2 1 UH16 = Specific Device Code AL = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package SMB MURHS160T3G (Pb−Free) NRVUHS160VT3G NRVUHS160VT3G−GA01 SURHS8160T3G SURHS8160T3G−GA01 Shipping† 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. V > 1000 > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 April, 2023 − Rev. 5 1 Publication Order Number: MURHS160/D MURHS160T3, NRVUHS160V, SURHS8160 THERMAL CHARACTERISTICS Symbol Value Unit Maximum Thermal Resistance, Junction−to−Lead (Note 1) Rating RqJL 24 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 3) (IF = 1.0 A, TC = 25°C) (IF = 1.0 A, TC = 125°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C) IR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A) trr Typ Max 1.5 1.2 2.4 1.7 0.18 5.0 20 200 25 16 35 30 Unit V mA ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MURHS160T3, NRVUHS160V, SURHS8160 TJ = 150°C 1 TJ = 125°C TJ = 25°C 0.5 1 1.5 2 2.5 3 10 TJ = 150°C 1 TJ = 125°C TJ = 25°C 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−03 IR, REVERSE CURRENT (A) 0.1 0 IF, INSTANTANEOUS FORWARD CURRENT (A) 10 1.0E−04 TJ = 150°C 1.0E−05 1.0E−06 TJ = 125°C 1.0E−07 1.0E−08 TJ = 25°C 1.0E−09 1.0E−10 0 100 200 300 400 500 600 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IR, MAXIMUM REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 1.0E−03 TJ = 150°C 1.0E−04 1.0E−05 TJ = 125°C 1.0E−06 TJ = 25°C 1.0E−07 1.0E−08 1.0E−09 1.0E−10 0 100 200 300 400 VR, REVERSE VOLTAGE (V) 500 Figure 4. Maximum Reverse Current www.onsemi.com 3 600 4 MURHS160T3, NRVUHS160V, SURHS8160 2 dc SQUARE WAVE 1 0 50 60 70 80 90 100 110 120 130 140 150 160 170 180 PFO, AVERAGE POWER DISSIPATION (W) IF, AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 10 9 8 7 6 SQUARE 5 4 DC 3 2 1 0 0 1 2 3 4 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 7. Forward Power Dissipation 5 100 C, CAPACITANCE (pF) TJ = 25°C 10 1 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) R(t), TRANSIENT THERMAL RESISTANCE Figure 6. Capacitance 100 D = 0.6 10 D = 0.2 D = 0.1 D = 0.05 1 D = 0.01 0.1 P(pk) SINGLE PULSE t1 t2 0.01 0.000001 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 8. Thermal Response Junction−to−Ambient www.onsemi.com 4 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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