MURS260T3G

MURS260T3G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SMB

  • 描述:

    快恢复二极管 VRRM=600V If=2A VF=1.45V trr=75ns SMB

  • 数据手册
  • 价格&库存
MURS260T3G 数据手册
MURS260T3G, SURS8260T3G Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • Pb−Free Package is Available Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (1.20 Volts Max @ 2.0 A, TJ = 150°C) SURS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com ULTRAFAST RECTIFIERS 2 AMPERES 600 VOLTS SMB CASE 403A Mechanical Characteristics MARKING DIAGRAM • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8 kV) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current IF(AV) 2.0 @ TL = 125°C A Non−Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 35 A TJ *65 to +175 °C Operating Junction Temperature = Specific Device Code = Assembly Location* = Year = Work Week = Pb-Free Package © Semiconductor Components Industries, LLC, 2012 *The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. April, 2017 − Rev. 4 U2J A Y WW G (Note: Microdot may be in either location) MAXIMUM RATINGS Rating AYWW U2JG G 1 Package Shipping† MURS260T3G SMB (Pb−Free) 2,500 / Tape & Reel SURS8260T3G SMB (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MURS260T3/D MURS260T3G, SURS8260T3G THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Lead (TL = 25°C) Value RqJL Unit °C/W 13 ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) (iF = 2.0 A, TJ = 25°C) (iF = 2.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Value Unit V 1.45 1.20 mA 5.0 150 ns 75 50 Maximum Forward Recovery Time tfr ns 50 (iF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 10 10 7.0 7.0 175°C 5.0 TC = 175°C 5.0 TC = 100°C 100°C 3.0 3.0 TC = 25°C TC = 25°C 2.0 IF , INSTANTANEOUS FORWARD CURRENT ( m A) I , INSTANTANEOUS FORWARD CURRENT (AMPS) F 2.0 1.0 0.7 0.5 0.3 0.2 0.1 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.07 0.05 0.05 0.03 0.03 0.02 0.02 0.01 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 2.1 2.3 MURS260T3G, SURS8260T3G 100 100 TJ = 175°C IR, REVERSE CURRENT (m A) IR, REVERSE CURRENT (m A) TJ = 175°C 10 TJ = 100°C 1.0 TJ = 25°C 0.1 0.01 10 TJ = 100°C 1.0 TJ = 25°C 0.1 0.01 0 100 300 200 400 500 600 700 0 100 VR, REVERSE VOLTAGE (VOLTS) 200 300 400 500 600 700 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. NOTE: TYPICAL CAPACITANCE AT 0 V = 24 pF 20 15 10 5.0 0 0 4.0 8.0 12 16 20 24 28 32 36 40 10 RATED VOLTAGE APPLIED RqJL = 13°C/W TJ = 175°C 9.0 8.0 7.0 6.0 5.0 4.0 DC 3.0 2.0 SQUARE WAVE 1.0 0 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating, Case PF(AV) , AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 25 5.0 SQUARE WAVE 4.0 3.0 DC TJ = 175°C 2.0 1.0 0 0 0.5 1.0 1.5 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Power Dissipation www.onsemi.com 3 2.5 180 200 MURS260T3G, SURS8260T3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MURHD560/D
MURS260T3G 价格&库存

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MURS260T3G
  •  国内价格 香港价格
  • 1+1.945801+0.25030
  • 100+1.49770100+0.19270
  • 1250+1.297301250+0.16690
  • 2500+1.226502500+0.15780

库存:5000

MURS260T3G
  •  国内价格
  • 1+0.83820
  • 100+0.55990
  • 1250+0.50820
  • 2500+0.46640

库存:10131

MURS260T3G
  •  国内价格
  • 2500+0.59360

库存:165000

MURS260T3G
  •  国内价格
  • 5+1.03449
  • 50+0.82751
  • 500+0.62818
  • 1000+0.61876

库存:554

MURS260T3G
  •  国内价格
  • 1+2.06490
  • 10+1.86004
  • 50+1.58964
  • 100+1.53228

库存:1623