MURS320T3G, SURS8320T3G,
MURS340T3G, SURS8340T3G,
MURS360T3G, SURS8360T3G
Surface Mount
Ultrafast Power Rectifiers
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This series employs the state−of−the−art epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for high
voltage, high frequency rectification, or as free wheeling and
protection diodes, in surface mount applications where compact size
and weight are critical to the system.
ULTRAFAST
RECTIFIERS
3.0 AMPERES
200−600 VOLTS
Features
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop
(0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150°C)
SURS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
•
•
•
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 217 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 16 mm Tape and Reel, 2500 units per reel
Polarity: Polarity Band on Plastic Body Indicates Cathode Lead
Device Meets MSL1 Requirements
ESD Ratings:
♦ Machine Model, C (> 400 V)
♦ Human Body Model, 3B (> 8 kV)
SMC 2−LEAD
CASE 403AC
MARKING DIAGRAM
AYWW
U3xG
G
U3 = Specific Device Code
x = D (320T3)
= G (340T3)
= J (360T3)
A = Assembly Location**
Y = Year
WW= Work Week
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly code
may be blank.
ORDERING INFORMATION
Package
Shipping†
MURS320T3G
SMC
(Pb−Free)
2,500 /
Tape & Reel
MURS340T3G
SMC
(Pb−Free)
2,500 /
Tape & Reel
MURS360T3G
SMC
(Pb−Free)
2,500 /
Tape & Reel
SURS8340T3G*
SMC
(Pb−Free)
2,500 /
Tape & Reel
SURS8320T3G*
SMC
(Pb−Free)
2,500 /
Tape & Reel
SURS8360T3G*
SMC
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
June, 2017 − Rev. 16
1
Publication Order Number:
MURS320T3/D
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G,
SURS8360T3G
MAXIMUM RATINGS
Rating
Symbol
MURS320T3G/
SURS8320T3G
MURS340T3G/
SURS8340T3G
MURS360T3G/
SURS8360T3G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
400
600
V
Average Rectified Forward Current
IF(AV)
3.0 @ TL = 140°C
4.0 @ TL = 130°C
3.0 @ TL = 130°C
4.0 @ TL = 115°C
3.0 @ TL = 130°C
4.0 @ TL = 115°C
A
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM
Operating Junction Temperature
A
100
TJ
*65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead
11
RqJL
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 3.0 A, TJ = 25°C)
(iF = 4.0 A, TJ = 25°C)
(iF = 3.0 A, TJ = 150°C)
vF
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
iR
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms)
(iF = 0.5 A, iR = 1.0 A, IREC to 0.25 A)
trr
Maximum Forward Recovery Time
(iF = 1.0 A, di/dt = 100 A/ms, Recovery to 1.0 V)
tfr
Typical Peak Reverse Recovery Current
(IF = 1.0 A, di/dt = 50 A/ms)
V
0.875
0.89
0.71
1.25
1.28
1.05
1.25
1.28
1.05
5.0
150
10
250
10
250
35
25
75
50
75
50
25
50
50
mA
ns
ns
IRM
0.8
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G,
SURS8360T3G
MURS320T3G/SURS8320T3G
IR, REVERSE CURRENT (m A)
5.0
3.0
TJ = 175°C
2.0
25°C
TJ = 175°C
TJ = 100°C
0.08
0.04
0.02
0.008
0.004
0.002
TJ = 25°C
0
20
40
60
1.0
80
100
120
160
140
180 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
0.7
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR is sufficiently below
rated VR.
0.5
10
PF(AV) , AVERAGE POWER DISSIPATION (W))
i F , INSTANTANEOUS FORWARD CURRENT (A)
100°C
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
0.3
0.2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
9.0
8.0
I
(CAPACITIVELOAD) PK + 20
I
7.0
5.0
AV
10
6.0
5.0
4.0
dc
3.0
SQUARE WAVE
2.0
1.0
0
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.5
Figure 1. Typical Forward Voltage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
90
100
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Power Dissipation
200
RATED VOLTAGE APPLIED
RqJL = 11°C/W
TJ = 175°C
8.0
TYPICAL CAPACITANCE AT 0 V = 135 pF
7.0
C, CAPACITANCE (pF)
IF(AV) , AVERAGE FORWARD CURRENT (A)
10
9.0
6.0
5.0
4.0
3.0
dc
2.0
100
80
60
40
30
20
SQUARE WAVE
1.0
10
0
90
100
110
120
130
140
150
160
170
180
190
0
10
20
30
40
50
60
70
80
TC, CASE TEMPERATURE (°C)
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Current Derating, Case
Figure 5. Typical Capacitance
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3
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G,
SURS8360T3G
TYPICAL CHARACTERISTICS
400
200
5.0
IR, REVERSE CURRENT (m A)
3.0
100°C
TJ = 175°C
25°C
1.0
TJ = 100°C
0.08
0.04
0.02
TJ = 25°C
0.008
0.004
0.7
0
200
100
0.5
300
400
600
500
700
VR, REVERSE VOLTAGE (V)
Figure 7. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR is sufficiently below
rated VR.
0.3
0.2
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
i F , INSTANTANEOUS FORWARD CURRENT (A)
2.0
TJ = 175°C
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
0.1
0.07
0.05
0.03
0.02
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
10
9.0
8.0
7.0
SQUARE WAVE
6.0
dc
(CAPACITIVE LOADS)
5.0
I
4.0
I
3.0
PK + 20
10
5.0
AV
2.0
1.0
0
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.5
Figure 6. Typical Forward Voltage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
90
100
IF(AV), AVERAGE FORWARD CURRENT (A)
10
100
9.0
90
8.0
80
C, CAPACITANCE (pF)
IF(AV) , AVERAGE FORWARD CURRENT (A)
Figure 8. Power Dissipation
7.0
6.0
5.0
4.0
dc
3.0
SQUARE WAVE
2.0
TYPICAL CAPACITANCE AT 0 V = 75 pF
70
60
50
40
30
20
1.0
10
0
0
70
80
90
100
110
120
130
140
150
160
170
0
10
20
30
40
50
60
70
80
TC, CASE TEMPERATURE (°C)
VR, REVERSE VOLTAGE (V)
Figure 9. Current Derating, Case
Figure 10. Typical Capacitance
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4
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G,
SURS8360T3G
MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G
IFSM, NON−REPETITIVE SURGE
CURRENT (A)
10000
1000
100
10
10
100
1,000
tp, SQUARE WAVE PULSE DURATION (ms)
10,000
Figure 11. Typical Non−Repetitive Surge Current
*Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table.
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5
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G,
SURS8360T3G
PACKAGE DIMENSIONS
SMC 2−LEAD
CASE 403AC
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD
FLASH SHALL NOT EXCEED 0.254mm PER SIDE.
4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H.
5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA
DETERMINED BY DIMENSION L.
HE
E
D
A1
c
DETAIL A
TOP VIEW
DETAIL A
A2
L
MILLIMETERS
MIN
MAX
1.95
2.61
0.05
0.20
1.90
2.41
2.90
3.20
0.15
0.41
5.55
6.25
6.60
7.15
7.75
8.15
0.75
1.60
DIM
A
A1
A2
b
c
D
E
HE
L
A
INCHES
MIN
MAX
0.077
0.103
0.002
0.008
0.075
0.095
0.114
0.126
0.060
0.016
0.219
0.246
0.260
0.281
0.305
0.321
0.030
0.063
b
END VIEW
SIDE VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
8.750
0.344
2X
3.790
0.149
2X
2.250
0.089
mm Ǔ
ǒinches
SCALE 4:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
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MURS320T3/D