MV209RLRA

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package Pb−Free Packages are Available http://onsemi.com 26−32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 3 Cathode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Forward Power Dissipation MMBV109LT1 @ TA = 25°C Derate above 25°C MV209 @ TA = 25°C Derate above 25°C PD Junction Temperature Storage Temperature Range 200 2.0 mW mW/°C 200 1.6 mW mW/°C TJ +125 °C Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Symbol Min Typ Max Unit V(BR)R 30 − − Vdc IR − − 0.1 mAdc TCC − 300 − ppm/°C Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) 2 Cathode SOT−23 TO−92 1 Anode 1 Anode MARKING DIAGRAMS 3 1 2 SOT−23 (TO−236) CASE 318−08 STYLE 8 M4A M G G 1 M4A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1 2 TO−92 (TO−226AC) CASE 182 STYLE 1 MV 209 AYWW G G MV209 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 5 1 Publication Order Number: MMBV109LT1/D MMBV109LT1, MV209 Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Package Shipping† SOT−23 3,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 10,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel TO−92 1,000 Units / Bag TO−92 (Pb−Free) 1,000 Units / Bag Device MMBV109LT1 MMBV109LT1G MMBV109LT3 MMBV109LT3G MV209 MV209G Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz CR, Capacitance Ratio C3/C25 f = 1.0 MHz (Note 1) Min Nom Max Min Min Max 26 29 32 200 5.0 6.5 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. 40 1000 36 Q, FIGURE OF MERIT CT , CAPACITANCE − pF 32 28 24 20 16 12 VR = 3 Vdc TA = 25°C 100 f = 1.0 MHz TA = 25°C 8 4 0 1 3 10 30 10 100 Figure 2. FIGURE OF MERIT C t , DIODE CAPACITANCE (NORMALIZED) I R , REVERSE CURRENT (nA) 1000 Figure 1. DIODE CAPACITANCE 20 10 6.0 VR = 20 Vdc 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 −40 100 f, FREQUENCY (MHz) 100 60 0.002 0.001 −60 10 VR, REVERSE VOLTAGE (VOLTS) −20 0 +20 +40 +60 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 −75 +80 +100 +120 +140 VR = 3.0 Vdc f = 1.0 MHz Ct [ Cc + Cj −50 −25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE TA, AMBIENT TEMPERATURE Figure 3. LEAKAGE CURRENT Figure 4. DIODE CAPACITANCE NOTES ON TESTING AND SPECIFICATIONS http://onsemi.com 2 +100 +125 MMBV109LT1, MV209 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 MMBV109LT1, MV209 PACKAGE DIMENSIONS TO−92 (TO−226AC) CASE 182−06 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE ÉÉ ÉÉ D L P J K SECTION X−X X X D G H V 1 2 C DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.050 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 −−− 6.35 −−− 2.03 2.66 −−− 1.27 2.93 −−− 3.43 −−− STYLE 1: PIN 1. ANODE 2. CATHODE N N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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