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MZP4729ARLG

MZP4729ARLG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    DO41

  • 描述:

    DIODE ZENER 3.6V 3W AXIAL

  • 数据手册
  • 价格&库存
MZP4729ARLG 数据手册
3 Watt DO-41 Surmetic 30 Zener Voltage Regulators MZP4729A Series This is a complete series of 3 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial−lead, transfer−molded plastic package that offers protection in all common environmental conditions. www.onsemi.com Cathode Anode Specification Features: • • • • • • Zener Voltage Range − 3.6 V to 30 V ESD Rating of Class 3 (>16 KV) per Human Body Model Surge Rating of 98 Watt @ 1 ms Maximum Limits Guaranteed on up to Six Electrical Parameters Package No Larger than the Conventional 1 Watt Package These are Pb−Free Devices* AXIAL LEAD CASE 59 PLASTIC Mechanical Characteristics: CASE: Void free, transfer−molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 260°C, 1/16″ from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Max. Steady State Power Dissipation @ TL = 75°C, Lead Length = 3/8″ Derate above 75°C PD 3 W 24 mW/°C Steady State Power Dissipation @ TA = 50°C Derate above 50°C PD 1 W 6.67 mW/°C −65 to +200 °C Operating and Storage Temperature Range TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A MZP 47xxA YYWWG G A MZP47xxA YY WW G = Assembly Location = Device Number = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping† MZP47xxARLG Axial Lead (Pb−Free) 6000/Tape & Reel MZP47xxATAG Axial Lead (Pb−Free) 4000/Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 December, 2019 − Rev. 5 1 Publication Order Number: MZP4729A/D MZP4729A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Breakdown Voltage IF Forward Current VF Forward Voltage @ IF IR Surge Current @ TA = 25°C VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mA for all types) Zener Voltage (Note 2) VZ (Volts) Zener Impedance (Note 3) @ IZT ZZT @ IZT Leakage Current ZZK @ IZK IR @ VR IR (Note 4) Device Marking Min Nom Max mA W W mA mA Max Volts mA MZP4729A, G MZP4729A 3.42 3.6 3.78 69 10 400 1 100 1 1260 MZP4735A, G MZP4735A 5.89 6.2 6.51 41 2 700 1 10 3 730 MZP4746A, G MZP4746A 17.10 18 18.90 14 20 750 0.25 5 13.7 250 MZP4749A, G MZP4749A 22.80 24 25.20 10.5 25 750 0.25 5 18.2 190 MZP4750A, G MZP4750A 25.65 27 28.35 9.5 35 750 0.25 5 20.6 170 Device† (Note 1) †The “G’’ suffix indicates Pb−Free package. 1. TOLERANCE AND TYPE NUMBER DESIGNATION The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 2. ZENER VOLTAGE (VZ) MEASUREMENT ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C, 3/8″ from the diode body. 3. ZENER IMPEDANCE (ZZ) DERIVATION The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK. 4. SURGE CURRENT (IR) NON−REPETITIVE The rating listed in the electrical characteristics table is maximum peak, non−repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards. However, actual device capability is as described in Figure 3 of the General Data sheet for Surmetic 30s. www.onsemi.com 2 MZP4729A Series PD, MAXIMUM STEADY STATE POWER DISSIPATION (WATTS) 5 L = LEAD LENGTH TO HEAT SINK L = 1/8″ 4 L = 3/8″ 3 2 L = 1″ 1 0 0 20 40 60 80 100 120 140 160 TL, LEAD TEMPERATURE (°C) 180 200 Figure 1. Power Temperature Derating Curve θJL(t, D) TRANSIENT THERMAL RESISTANCE JUNCTION‐TO‐LEAD ( °C/W) 30 20 10 7 5 3 2 1 0.7 0.5 D =0.5 0.2 0.1 t2 DUTY CYCLE, D =t1/t2 0.02 0.01 NOTE: BELOW 0.1 SECOND, THERMAL RESPONSE CURVE IS APPLICABLE TO ANY LEAD LENGTH (L). D=0 0.3 0.0001 0.0002 t1 PPK 0.05 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 t, TIME (SECONDS) 0.1 0.2 SINGLE PULSE DTJL = qJL (t)PPK REPETITIVE PULSES DTJL = qJL (t,D)PPK 0.5 1 2 5 10 PPK , PEAK SURGE POWER (WATTS) 1K RECTANGULAR NONREPETITIVE WAVEFORM TJ=25°C PRIOR TO INITIAL PULSE 500 300 200 100 50 30 3 2 1 0.5 0.2 0.3 0.5 1 2 3 5 10 PW, PULSE WIDTH (ms) 20 30 50 100 TA = 125°C 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0005 0.0003 20 10 0.1 IR , REVERSE LEAKAGE (μ Adc) @ VR AS SPECIFIED IN ELEC. CHAR. TABLE Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch TA = 125°C 1 Figure 3. Maximum Surge Power 2 5 10 20 50 100 NOMINAL VZ (VOLTS) 200 400 Figure 4. Typical Reverse Leakage www.onsemi.com 3 1000 MZP4729A Series APPLICATION NOTE DTJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses (L = 3/8 inch) or from Figure 10 for dc power. Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: DTJL = qJL PD For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ (DTJ) may be estimated. Changes in voltage, VZ, can then be found from: TL = qLA PD + TA qLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for qLA will vary and depends on the device mounting method. qLA is generally 30−40°C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: DV = qVZ DTJ qVZ, the zener voltage temperature coefficient, is found from Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capability. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded. TJ = TL + DTJL TEMPERATURE COEFFICIENT RANGES 10 8 6 4 RANGE 2 0 -2 -4 3 4 5 6 7 8 9 10 VZ, ZENER VOLTAGE @ IZT (VOLTS) 11 12 θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT (90% of the Units are in the Ranges Indicated) 1000 500 200 100 50 20 10 10 Figure 5. Units to 12 Volts 20 50 100 200 400 VZ, ZENER VOLTAGE @ IZT (VOLTS) Figure 6. Units 10 to 400 Volts www.onsemi.com 4 1000 MZP4729A Series ZENER VOLTAGE versus ZENER CURRENT 100 50 30 20 50 30 20 IZ , ZENER CURRENT (mA) 100 10 5 3 2 1 0.5 0.3 0.2 0 1 2 3 4 5 6 7 VZ, ZENER VOLTAGE (VOLTS) 8 9 10 5 3 2 1 0.5 0.3 0.2 0.1 10 0 10 20 Figure 7. VZ = 3.3 to 10 Volts 30 40 50 60 70 VZ, ZENER VOLTAGE (VOLTS) 5 2 1 0.5 0.2 0.1 100 150 200 250 300 350 VZ, ZENER VOLTAGE (VOLTS) 400 Figure 9. VZ = 100 to 400 Volts 80 70 60 50 L 40 L 30 TL 20 PRIMARY PATH OF CONDUCTION IS THROUGH THE CATHODE LEAD 10 0 0 1/8 80 Figure 8. VZ = 12 to 82 Volts 10 IZ , ZENER CURRENT (mA) 0.1 θJL, JUNCTION‐TO‐LEAD THERMAL RESISTANCE (° C/W) IZ, ZENER CURRENT (mA) (Figures 7, 8 and 9) 1/4 3/8 1/2 5/8 3/4 L, LEAD LENGTH TO HEAT SINK (INCH) 7/8 Figure 10. Typical Thermal Resistance www.onsemi.com 5 1 90 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U DATE 15 FEB 2005 B K STYLE 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. D STYLE 2 F A SCALE 1:1 POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F K DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY A xxx xxx YYWW STYLE 1 xxx A YY WW A xxx xxx YYWW STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98ASB42045B AXIAL LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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