N02L6181AB27I

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Other names and brands may be claimed as the property of others. N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Features Overview • Single Wide Power Supply Range 1.65 to 2.2 Volts The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as ON Semiconductor’s N02L63W3A, which is processed to operate at higher voltages. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N02L6181A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 128Kb x 16 SRAMs. • Very low standby current 0.5µA at 1.8V (Typical) • Very low operating current 1.4mA at 1.8V and 1µs (Typical) • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical) • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.2V • Very fast output enable access time 30ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Compact space saving BGA package Product Family Part Number Package Type N02L6181AB 48 - BGA N02L6181AB2 Green 48-BGA ©2008 SCILLC. All rights reserved. July 2008 - Rev. 4 Operating Temperature Power Supply (Vcc) -40oC to +85oC 1.65V - 2.2V Speed 70 and 85ns @ 1.65V Standby Operating Current (ISB), Current (Icc), Max Max 10 µA 3 mA @ 1MHz Publication Order Number: N02L6181A/D N02L6181A Pin Configurations 1 2 3 4 5 6 A LB OE A0 A1 A2 NC B I/O8 UB A3 A4 CE I/O0 C I/O9 I/O10 A5 A6 I/O1 I/O2 D VSS I/O11 NC A7 I/O3 VCC E VCC I/O12 NC A16 I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H NC A8 A9 A10 A11 NC 48 Pin BGA (top) 6 x 8 mm Pin Descriptions Pin Name Pin Function A0-A16 Address Inputs WE CE OE LB UB I/O0-I/O15 Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input NC VCC Not Connected VSS Ground Data Inputs/Outputs Power Rev. 4 | Page 2 of 11 | www.onsemi.com N02L6181A Functional Block Diagram Address Inputs A0 - A3 Page Address Word Mux Address Inputs A4 - A16 Word Address Decode Logic 8K Page x 16 word x 16 bit RAM Array Decode Logic Input/ Output Mux and Buffers I/O0 - I/O7 I/O8 - I/O15 CE WE OE UB LB Control Logic Functional Description CE WE OE UB LB I/O0 - I/O151 MODE POWER H X X X X High Z Standby2 Standby L X X H H High Z Standby2 Standby L 3 1 1 Active L L L H H X L L Data In Write3 L L1 L1 Data Out Read Active H L1 L1 High Z Active Active 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Symbol Test Condition Input Capacitance CIN VIN = 0V, f = 1 MHz, TA = 25oC I/O Capacitance CI/O Min o VIN = 0V, f = 1 MHz, TA = 25 C 1. These parameters are verified in device characterization and are not 100% tested Rev. 4 | Page 3 of 11 | www.onsemi.com Max Unit 8 pF 8 pF N02L6181A Absolute Maximum Ratings1 Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 3.0 V Power Dissipation PD 500 mW Storage Temperature TSTG –40 to 125 oC Operating Temperature TA -40 to +85 o Soldering Temperature and Time TSOLDER 240oC, 10sec(Lead only) o C C 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Characteristics (Over Specified Temperature Range) Min. Typ1 Max Unit 1.65 1.8 2.2 V 1.2 2.2 V VIH 0.7Vcc VCC+0.3 V Input Low Voltage VIL –0.3 0.3Vcc V Output High Voltage VOH IOH = 0.2mA Output Low Voltage VOL IOL = -0.2mA 0.3 V Input Leakage Current ILI VIN = 0 to VCC 0.5 µA Output Leakage Current ILO OE = VIH or Chip Disabled 0.5 µA Read/Write Operating Supply Current @ 1 µs Cycle Time2 ICC1 VCC=2.2 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 1.4 3.0 mA Read/Write Operating Supply Current @ 70 ns Cycle Time2 ICC2 VCC=2.2 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 8.0 17.0 mA Page Mode Operating Supply Current @ 70ns Cycle Time2 (Refer to Power Savings with Page Mode Operation diagram) ICC3 VCC=2.2V, VIN=VIH or VIL Chip Enabled, IOUT = 0 2.0 4.0 mA Read/Write Quiescent Operating Supply Current3 ICC4 VCC=2.2V, VIN=VIH or VIL Chip Enabled, IOUT = 0, f=0 0.1 mA ISB1 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 2.2 V 10.0 µA 5.0 µA Item Symbol Supply Voltage VCC Data Retention Voltage VDR Input High Voltage Maximum Standby Current3 Maximum Data Retention Current3 IDR Test Conditions Chip Disabled2 VCC = 1.2V, VIN = VCC or 0 Chip Disabled, tA= 85oC VCC–0.2 V 0.5 1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. 3. This device assumes a standby mode if the chip is disabled (CE high). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS Rev. 4 | Page 4 of 11 | www.onsemi.com N02L6181A Power Savings with Page Mode Operation (WE = VIH) Page Address (A4 - A16 ) Word Address (A0 - A3) Open page Word 1 Word 2 ... Word 16 CE OE LB, UB Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Rev. 4 | Page 5 of 11 | www.onsemi.com N02L6181A Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 30pF Power Supply Voltage 1.65 - 2.2V Operating Temperature -40 to +85 oC Timing 85ns 70ns Item Symbol Read Cycle Time tRC Address Access Time tAA 85 70 ns Chip Enable to Valid Output tCO 85 70 ns Output Enable to Valid Output tOE 30 25 ns Byte Select to Valid Output tLB, tUB 85 70 ns Chip Enable to Low-Z output tLZ 10 10 ns Output Enable to Low-Z Output tOLZ 5 5 ns Byte Select to Low-Z Output tLBZ, tUBZ 10 10 ns Chip Disable to High-Z Output tHZ 30 25 ns Output Disable to High-Z Output tOHZ 30 25 ns Byte Select Disable to High-Z Output tLBHZ, tUBHZ 25 ns Output Hold from Address Change tOH 5 5 ns Write Cycle Time tWC 85 70 ns Chip Enable to End of Write tCW 50 40 ns Address Valid to End of Write tAW 50 40 ns Byte Select to End of Write tLBW, tUBW 50 40 ns Write Pulse Width tWP 50 40 ns Address Setup Time tAS 0 0 ns Write Recovery Time tWR 0 0 ns Write to High-Z Output tWHZ Data to Write Time Overlap tDW 40 40 ns Data Hold from Write Time tDH 0 0 ns End Write to Low-Z Output tOW 10 10 ns Min. Max. 85 Min. 70 30 25 Rev. 4 | Page 6 of 11 | www.onsemi.com Max. Units ns 20 ns N02L6181A Timing of Read Cycle (CE = OE = VIL, WE = VIH) tRC Address tAA tOH Data Out Previous Data Valid Data Valid Timing Waveform of Read Cycle (WE= VIH) tRC Address tAA tHZ tCO CE tLZ tOHZ tOE OE tOLZ tLB, tUB LB, UB tLBLZ, tUBLZ Data Out High-Z tLBHZ, tUBHZ Data Valid Rev. 4 | Page 7 of 11 | www.onsemi.com N02L6181A Timing Waveform of Write Cycle (WE control) tWC Address tWR tAW tCW CE tLBW, tUBW LB, UB tWP tAS WE tDW High-Z tDH Data Valid Data In tWHZ tOW High-Z Data Out Timing Waveform of Write Cycle (CE Control) tWC Address tAW tWR tCW CE tAS tLBW, tUBW LB, UB tWP WE tDW Data Valid Data In tLZ Data Out tDH tWHZ High-Z Rev. 4 | Page 8 of 11 | www.onsemi.com N02L6181A 44-Lead TSOP II Package (T44) 18.41±0.13 11.76±0.20 10.16±0.13 0.80mm REF 0.45 0.30 DETAIL B SEE DETAIL B 1.10±0.15 0o-8o 0.20 0.00 0.80mm REF Note: 1. All dimensions in inches (Millimeters) 2. Package dimensions exclude molding flash Rev. 4 | Page 9 of 11 | www.onsemi.com N02L6181A Ball Grid Array Package 0.28±0.05 1.24±0.10 D A1 BALL PAD CORNER (3) 1. 0.35±0.05 DIA. E 2. SEATING PLANE - Z 0.15 Z 0.05 TOP VIEW SIDE VIEW 1. DIMENSION IS MEASURED AT THE A1 BALL PAD MAXIMUM SOLDER BALL DIAMETER. CORNER PARALLEL TO PRIMARY Z. SD e SE 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. K TYP J TYP e BOTTOM VIEW Dimensions (mm) e = 0.75 D 6±0.10 SD SE J K BALL MATRIX TYPE 0.375 0.375 1.125 1.375 FULL E 8±0.10 Rev. 4 | Page 10 of 11 | www.onsemi.com Z N02L6181A Ordering Information Part Number Package Shipping Method Speed N02L6181AB7I Leaded 48-BGA Tray 70ns N02L6181AB27I Green 48-BGA (RoHS Compliant) Tray 70ns N02L6181AB8I Leaded 48-BGA Tray 85ns N02L6181AB28I Green 48-BGA (RoHS Compliant) Tray 85ns N02L6181AB7IT Leaded 48-BGA Tape & Reel 70ns N02L6181AB27IT Green 48-BGA (RoHS Compliant) Tape & Reel 70ns N02L6181AB8IT Leaded 48-BGA Tape & Reel 85ns N02L6181AB28IT Green 48-BGA (RoHS Compliant) Tape & Reel 85ns Revision History Revision # Date A Apr. 2003 Initial Release Nov. 2005 Added TSOP II Green Pkg. , Green Pkg. Part # and RoHS Compliant B C 4 Change Description September 2006 Converted to AMI Semiconductor July 2008 Converted to ON Semiconductor and new part numbers ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor PO Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East & Africa Technical Support: Phone 421-33-790-2910 Japan Customer Focus Center: Phone 81-3-5773-3850 Rev. 4 | Page 11 of 11 | www.onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative