N04L63W2AT27I

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N04L63W2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview Features The N04L63W2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N04L63W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 16 SRAMs • Single Wide Power Supply Range 2.3 to 3.6 Volts • Very low standby current 4.0µA at 3.0V (Typical) • Very low operating current 2.0mA at 3.0V and 1µs (Typical) • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.8V • Very fast output enable access time 25ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Compact space saving BGA package available Product Family Operating Temperature Part Number Package Type N04L63W2AB 48 - BGA N04L63W2AT 44 - TSOP II N04L63W2AB2 48 - BGA Green N04L63W2AT2 44 - TSOP II Green PIN ONE N04L63W2A TSOP-II 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 CE2 A8 A9 A10 A11 A17 ©2008 SCILLC. All rights reserved. July 2008 - Rev. 10 Speed Options 70ns @ 2.7V -40oC to +85oC 2.3V - 3.6V 55ns @ 2.7V Pin Configuration A4 A3 A2 A1 A0 CE1 I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 Power Supply (Vcc) Standby Operating Current (ISB), Current (Icc), Typical Typical 4 µA 2 mA @ 1MHz Pin Descriptions 1 2 3 4 5 6 A LB OE A0 A1 A2 CE2 Pin Name Pin Function B I/O8 UB A3 A4 CE1 I/O0 A0-A17 Address Inputs C I/O9 I/O10 A5 A6 I/O1 I/O2 WE CE1, CE2 OE LB UB I/O0-I/O15 Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input VCC Power D VSS I/O11 A17 A7 I/O3 VCC E VCC I/O12 NC A16 I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H NC A8 A9 A10 A11 NC 48 Pin BGA (top) 6 x 8 mm Data Inputs/Outputs VSS Ground NC Not Connected Publication Order Number: N04L63W2A/D N04L63W2A Functional Block Diagram Word Address Decode Logic Address Inputs A4 - A17 Page Address Decode Logic 16K Page x 16 word x 16 bit RAM Array Input/ Output Mux and Buffers Word Mux Address Inputs A0 - A3 I/O0 - I/O7 I/O8 - I/O15 CE1 CE2 WE OE UB LB Control Logic Functional Description CE1 CE2 WE OE UB LB I/O0 - I/O151 MODE POWER H X X X X X High Z Standby2 Standby Standby X L X X X X High Z Standby2 L H X X H H High Z Standby Standby L X3 1 L L 1 Data In Write3 Active L L1 L1 Data Out Read Active H L1 1 High Z Active Active L L L H H H H H L 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Symbol Test Condition Input Capacitance CIN VIN = 0V, f = 1 MHz, TA = 25oC I/O Capacitance CI/O Min o VIN = 0V, f = 1 MHz, TA = 25 C 1. These parameters are verified in device characterization and are not 100% tested Rev. 10 | Page 2 of 10 | www.onsemi.com Max Unit 8 pF 8 pF N04L63W2A Absolute Maximum Ratings1 Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 4.5 V Power Dissipation PD 500 mW Storage Temperature TSTG –40 to 125 oC Operating Temperature TA -40 to +85 oC Soldering Temperature and Time TSOLDER 260oC, 10sec oC 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Characteristics (Over Specified Temperature Range) Min. Typ1 Max Unit 2.3 3.0 3.6 V 1.8 3.6 V VIH 1.8 VCC+0.3 V Input Low Voltage VIL –0.3 0.6 V Output High Voltage VOH IOH = 0.2mA Output Low Voltage VOL IOL = -0.2mA 0.2 V Input Leakage Current ILI VIN = 0 to VCC 0.5 µA Output Leakage Current ILO OE = VIH or Chip Disabled 0.5 µA Read/Write Operating Supply Current @ 1 µs Cycle Time2 ICC1 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 2.0 3.0 mA Read/Write Operating Supply Current @ 70 ns Cycle Time2 ICC2 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 10.0 16.0 mA Page Mode Operating Supply Current @ 70ns Cycle Time2 (Refer to Power Savings with Page Mode Operation diagram) ICC3 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 4.0 Read/Write Quiescent Operating Supply Current3 ICC4 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0, f=0 Maximum Standby Current3 ISB1 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 3.6 V Maximum Data Retention Current3 IDR Item Symbol Supply Voltage VCC Data Retention Voltage VDR Input High Voltage Test Conditions Chip Disabled 3 Vcc = 1.8V, VIN = VCC or 0 Chip Disabled, tA= 85oC VCC–0.2 V 4.0 mA 2.0 mA 20.0 µA 10 µA 1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. 3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS. Rev. 10 | Page 3 of 10 | www.onsemi.com N04L63W2A Power Savings with Page Mode Operation (WE = VIH) Page Address (A4 - A17) Word Address (A0 - A3) Open page Word 1 Word 2 ... Word 16 CE1 CE2 OE LB, UB Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Rev. 10 | Page 4 of 10 | www.onsemi.com N04L63W2A Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 30pF Operating Temperature -40 to +85 oC Timing -70 Item Symbol 2.3 - 2.65 V Min. Max. -55 2.7 - 3.6 V Min. Max. 2.7 - 3.6 V Min. Units Max. Read Cycle Time tRC Address Access Time tAA 85 70 55 ns Chip Enable to Valid Output tCO 85 70 55 ns Output Enable to Valid Output tOE 30 25 25 ns Byte Select to Valid Output tLB, tUB 85 70 55 ns Chip Enable to Low-Z output tLZ 10 10 10 ns Output Enable to Low-Z Output tOLZ 5 5 5 ns Byte Select to Low-Z Output tBZ 10 10 10 ns Chip Disable to High-Z Output tHZ 0 20 0 20 0 20 ns 0 20 0 20 ns 0 20 0 20 85 70 55 ns Output Disable to High-Z Output tOHZ 0 20 Byte Select Disable to High-Z Output tBHZ 0 20 Output Hold from Address Change tOH 10 10 10 ns Write Cycle Time tWC 85 70 55 ns Chip Enable to End of Write tCW 50 50 45 ns Address Valid to End of Write tAW 50 50 45 ns Byte Select to End of Write tBW 50 50 45 ns Write Pulse Width tWP 40 40 40 ns Address Setup Time tAS 0 0 0 ns Write Recovery Time tWR 0 0 0 ns Write to High-Z Output tWHZ Data to Write Time Overlap tDW 40 40 40 ns Data Hold from Write Time tDH 0 0 0 ns End Write to Low-Z Output tOW 5 5 5 ns 20 20 Rev. 10 | Page 5 of 10 | www.onsemi.com 20 ns ns N04L63W2A Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) tRC Address tAA tOH Data Out Previous Data Valid Data Valid Timing Waveform of Read Cycle (WE=VIH) tRC Address tAA tHZ CE1 tCO CE2 tLZ tOHZ tOE OE tOLZ tLB, tUB LB, UB tBLZ Data Out High-Z tBHZ Data Valid Rev. 10 | Page 6 of 10 | www.onsemi.com N04L63W2A Timing Waveform of Write Cycle (WE control) tWC Address tWR tAW CE1 tCW CE2 tBW LB, UB tAS tWP WE tDW High-Z tDH Data Valid Data In tWHZ tOW High-Z Data Out Timing Waveform of Write Cycle (CE1 Control) tWC Address tAW CE1 (for CE2 Control, use inverted signal) tWR tCW tAS tBW LB, UB tWP WE tDW Data Valid Data In tLZ Data Out tDH tWHZ High-Z Rev. 10 | Page 7 of 10 | www.onsemi.com N04L63W2A 44-Lead TSOP II Package (T44) 18.41±0.13 11.76±0.20 10.16±0.13 0.80mm REF 0.45 0.30 DETAIL B SEE DETAIL B 1.10±0.15 0o-8o 0.20 0.00 0.80mm REF Note: 1. All dimensions in inches (Millimeters) 2. Package dimensions exclude molding flash Rev. 10 | Page 8 of 10 | www.onsemi.com N04L63W2A Ball Grid Array Package 0.28±0.05 1.24±0.10 D A1 BALL PAD CORNER (3) 1. 0.35±0.05 DIA. E 2. SEATING PLANE - Z 0.15 Z 0.05 TOP VIEW SIDE VIEW 1. DIMENSION IS MEASURED AT THE A1 BALL PAD MAXIMUM SOLDER BALL DIAMETER. CORNER PARALLEL TO PRIMARY Z. SD e SE 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. K TYP J TYP e BOTTOM VIEW Dimensions (mm) e = 0.75 D 6±0.10 SD SE J K BALL MATRIX TYPE 0.375 0.375 1.125 1.375 FULL E 8±0.10 Rev. 10 | Page 9 of 10 | www.onsemi.com Z N04L63W2A Ordering Information Part Number Package Shipping Method N04L63W2AT7I Leaded 44-TSOP II Tray N04L63W2AT27I Green 44-TSOP II (RoHS Compliant) Tray N04L63W2AB7I Leaded 48-BGA Tray N04L63W2AB27I Green 48-BGA (RoHS Compliant) Tray N04L63W2AT7IT Leaded 44-TSOP II Tape & Reel N04L63W2AT27IT Green 44-TSOP II (RoHS Compliant) Tape & Reel N04L63W2AB7IT Leaded 48-BGA Tape & Reel N04L63W2AB27IT Green 48-BGA (RoHS Compliant) Tape & Reel Please contact factory for 55ns speed grade Revision History Revision Date Change Description A Jan. 2001 Initial Preliminary Release B Dec. 2001 Part number change from EM256J16, modified Overview and Features, added Page Mode Operation diagram, revised Operating Characteristics table, Package diagram, Functional Description table and Ordering Information diagram C Nov. 2002 Replaced Isb and Icc on Product Family table with typical values D February 2003 E August 2004 Added 55ns sort Removed 55ns sort F Oct 2004 Added Pb-Free and Green Package Option G Nov. 2005 Removed Pb-Free Pkg., added Green Pkg and RoHS Compliant was added H September 2006 I October 2007 10 July 2008 Converted to AMI Semiconductor Added 55ns performance sort Converted to ON Semiconductor and new part numbers ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor PO Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East & Africa Technical Support: Phone 421-33-790-2910 Japan Customer Focus Center: Phone 81-3-5773-3850 Rev. 10 | Page 10 of 10 | www.onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative