NB3RL02
Low Phase-Noise
Two-Channel Clock Fanout
Buffer
The NB3RL02 is a low−skew, low jitter 1:2 clock fan−out buffer,
ideal for use in portable end−equipment, such as mobile phones. With
integrated LDO and output control circuitry.
The MCLK_IN pin has an AC coupling capacitor and will directly
accept a square or sine wave clock input, such as a temperature
compensated crystal oscillator (TCXO). The minimum acceptable
input amplitude of the sine wave is 300 mV peak−to−peak.
The two clock outputs are enabled by control inputs CLK_REQ1
and CLK_REQ2.
The NB3RL02 has an integrated Low−Drop−Out (LDO) voltage
regulator which accepts input voltages from 2.3 V to 5.5 V and outputs
1.8 V at Iout = 50 mA. This 1.8 V supply is externally available to
provide regulated power to peripheral devices, such as a TCXO.
The adaptive clock output buffers offer controlled slew−rate over a
wide capacitive loading range which minimizes EMI emissions,
maintains signal integrity, and minimizes ringing caused by signal
reflections on the clock distribution lines.
The NB3RL02 is offered in a 0.4 mm pitch wafer−level−chip−scale
(WLCS) package and is optimized for very low standby current
consumption.
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MARKING
DIAGRAMS
WLCSP8
CASE 499BQ
RL
YY
WW
G
RLYYWW
G
= Specific Device Code
= Year
= Work Week
= Pb−Free Package
LOGIC DIAGRAM
Features
• Low Additive Noise:
−149 dBc/Hz at 10 kHz Offset Phase Noise
0.37 ps (rms) Output Jitter
Limited Output Slew Rate for EMI Reduction
(1 ns to 5 ns/Rise/Fall Time for 10−50 pF Loads)
Regulated 1.8 V Output Supply Available for External Clock Source,
ie. TCX0
Operation to 80 MHz
Ultra−Small Package:
♦ 8−ball: 0.4 mm Pitch WLCS
ESD Performance Exceeds JESD 22
♦ 2000 V Human−Body Model (A114−A)
♦ 200 V Machine Model (A115−A)
♦ 1000 V Charged−Device Model (JESD22−C101−A Level III)
These are Pb−Free Devices
♦
•
•
•
•
•
•
♦
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Applications
• Cellular Phones
• Global Positioning Systems (GPS)
© Semiconductor Components Industries, LLC, 2015
August, 2019 − Rev. 6
1
Publication Order Number:
NB3RL02/D
NB3RL02
1
2
A
A1
A2
B
B1
B2
C
C1
C2
D
D1
D2
(Package − Flip Chip)
Die Pads Face Down on PCB
Figure 1. Pinout (Top View)
Table 1. PIN DESCRIPTION
Ball No.
Name
I/O
Description
A1
VBATT
I
Input to internal LDO
A2
CLK_OUT1
O
Clock output 1
B1
VLDO
O
1.8 V supply for NB3RL02 and external TCXO
B2
CLK_REQ1
I
Clock request from peripheral 1
C1
MCLK_IN
I
Master clock input
C2
CLK_REQ2
I
Clock request from peripheral 2
D1
GND
−
Ground
D2
CLK_OUT2
O
Clock output 2
Table 2. FUNCTION TABLE
Inputs
CLK_REQ1
CLK_REQ2
Outputs
MCLK_IN
CLK_OUT1
CLK_OUT2
VLDO
L
L
X
L
L
0V
L
H
CLK
L
CLK
1.8 V
H
L
CLK
CLK
L
1.8 V
H
H
CLK
CLK
CLK
1.8 V
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2
NB3RL02
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
VBATT
Parameter
Condition
Min
Max
Unit
−0.3
7
V
CLK_REQ_1/2, MCLK_IN
−0.3
VBATT + 0.3
V
VLDO, CLK_OUT_1/2
(Note 1)
−0.3
VBATT + 0.3
VBATT Voltage Range (Note 1)
Voltage range (Note 2)
IIK
Input clamp current at VBATT, CLK_REQ_1/2,
and MCLK_IN
IO
Continuous output current
Continuous current through GND, VBATT, VLDO
VI < 0
−50
mA
CLK_OUT1/2
$20
mA
Continuous current through
GND, VBATT, VLDO
$50
mA
V
ESD Rating
Human−Body Model
2000
Charged−Device Model
1000
Machine Model
200
TJ
Operating virtual junction temperature
−40
150
°C
TA
Operating ambient temperature range
−40
85
°C
Tstg
Storage temperature range
−55
150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. The input negative−voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. All voltage values are with respect to network ground terminal.
Table 4. RECOMMENDED OPERATING CONDITIONS (Note 3)
Symbol
VBATT
Parameter
Input voltage
VBATT
Min
Max
Unit
2.3
5.5
V
VI
Input voltage Amplitude
MCLK_IN, CLK_REQ1/2
0
1.89
V
VO
Output voltage
CLK_OUT1/2
0
1.8
V
VIH
High−level input voltage
CLK_REQ1/2
1.3
1.89
V
VIL
Low−level input voltage
CLK_REQ1/2
0
0.5
V
IOH
High−level output current, DC current
IOL
Low−level output current, DC current
−8
mA
8
3. All unused inputs of the device must be held at VCC or GND to ensure proper device operation.
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3
mA
NB3RL02
Table 5. ELECTRICAL CHARACTERISTICS (TA = −40°C to +85°C)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IOUT = 50 mA
1.71
1.8
1.89
V
10
mF
LDO
VOUT
LDO output voltage
CLDO
External load capacitance
IOUT(SC)
Short circuit output current
IOUT(PK)
PSR
tsu
1
RL = 0 W
100
Peak output current
VBATT = 2.3 V, VLDO = VOUT − 5%
55
Power supply rejection
VBATT = 2.3V,
IOUT = 2 mA
LDO start−up time
fIN = 217 Hz
and 1 kHz
60
fIN = 3.25 MHz
40
mA
100
mA
dB
0.2
VBATT = 2.3 V , CLDO = 1 mF, CLK_REQ_n
to VLDO = 1.71 V
VBATT = 5.5 V , CLDO = 10 mF, CLK_REQ_n
to VLDO = 1.71 V
ms
1
ms
POWER CONSUMPTION
ISB
Standby current
ICCS
Static current consumption
IOB
Output buffer average
current
CPD
Output power dissipation
capacitance
Device in standby (all VCLK_REQ_n = 0 V)
0.2
1
mA
Device active but not switching,
VCLK_REQn = H
0.4
1
mA
fIN = 26 MHz, CLOAD = 50 pF
fIN = 52 MHz, CLOAD = 50 pF
4.2
6.0
mA
fIN = 26 MHz
44
pF
VI = VLDO or GND
1
mA
MCLK_IN INPUT
II
MCLK_IN, CLK_REQ_1/2
leakage current
CI
MCLK_IN capacitance
fIN = 26 MHz
3.75
pF
RI
MCLK_IN impedance
fIN = 26 MHz
5
kW
fIN
MCLK_IN frequency range
9
26/52
80
MHz
MCLK_IN LVCMOS SOURCE
Phase noise
Additive jitter
tDL
MCLK_IN to CLK_OUT_n
propagation delay
DCL
Output duty cycle
fIN = 26 MHz/52 MHz,
tr/tf v 1 ns
1 kHz offset
−140/−133
10 kHz offset
−149/−144
100 kHz offset
−153/−146
1 MHz offset
−151/−151
fIN = 26 MHz, VPP = 0.8 V,
fIN = 52 MHz, VPP = 0.8 V,
BW = 10 kHz − 5 MHz
fIN = 26 MHz, DCIN = 50%
fIN = 52 MHz, DCIN = 50%
45
45
dBc/Hz
0.37
0.24
ps
(rms)
10
ns
50
50
55
55
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed
circuit board with maintained transverse airflow greater than 500 lfpm.
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4
%
NB3RL02
Table 5. ELECTRICAL CHARACTERISTICS (TA = −40°C to +85°C)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
1.8
V
MCLK_IN SINUSOIDAL SOURCE
VMA
Input amplitude
Phase noise
0.3
fIN = 26 Mhz/52 MHz,
VMA = 1.8 VPP
fIN = 26 Mhz/52 MHz,
VMA = 0.8 VPP
Additive jitter
tDS
MCLK_IN to
CLK_OUT_1/2
propagation delay
DC
Output duty cycle
1 kHz offset
−138/−137
10 kHz offset
−146/−147
100 kHz offset
−151/−149
1 MHz offset
−149/−154
1 kHz offset
−138/−135
10 kHz offset
−146/−144
100 kHz offset
−150/−145
1 MHz offset
−148/−149
fIN = 26 MHz, VMA = 1.8 VPP,
fIN = 52 MHz, VMA = 1.8 VPP,
BW = 10 kHz − 5 MHz
fIN = 26 MHz, VMA > 1.8 VPP
fIN = 52 MHz, VMA > 1.8 VPP
45
45
dBc/Hz
0.37
0.16
ps
(rms)
12
ns
50
50
55
55
%
CLK_OUT_N OUTPUTS
tr
20% to 80% rise time
CL = 10 pF to 50 pF
1
5
ns
tf
20% to 80% fall time
CL = 10 pF to 50 pF
1
5
ns
tsk
Channel−to−channel skew
CL = 10 pF to 50 pF, (CL1 = CL2)
up to 52 MHz
−0.5
0.5
ns
VOH
High−level output voltage
IOH = −100 mA, reference to VLDO
−0.1
IOH = −8 mA
1.2
VOL
Low−level output voltage
V
IOL = 20 mA
0.2
IOL = 8 mA
0.55
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed
circuit board with maintained transverse airflow greater than 500 lfpm.
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5
V
NB3RL02
APPLICATION INFORMATION
Typical Application
buffered to drive a mobile GPS receiver and WLAN
transceiver. Each peripheral can independently request an
active clock by asserting a clock request line (CLK_REQ1
or CLK_REQ2).
A typical mobile application for the NB3RL02 is shown
in Figure 2. An external low noise TCXO clock source is
powered by the NB3RL02’s 1.8 V regulated LDO and is
Figure 2. Mobile Application
Typical input sinusoidal signal amplitude is 0.8 VPP for
specified performance, but amplitudes as low as 0.3 VPP are
acceptable, but with reduced phase noise and jitter
performance.
When both clock request lines are logic LOW, the
NB3RL02 enters a current-saving shutdown mode. In this
mode, the LDO output goes to 0 V and turns off the TCXO.
Also, the unpowered CLK_OUT1 and CLK_OUT2 outputs
are pulled to GND.
When the NB3RL02 receives a HIGH from either
peripheral CLK_REQn, the 1.8 V LDO output is enabled
and will power the TCXO. The output of the TCXO can be
a square wave, sine wave, or clipped sine wave and is
converted to a buffered square wave.
CLK_OUT1 and CLK_OUT2 Outputs
The CLK_OUT1 and CLK_OUT2 outputs drive 1.8 V
LVCMOS levels with rise/fall times within 1 ns to 5 ns with
load capacitors between 10 pF and 50 pF. These relatively
slow edge rates will minimize EMI radiation into the system.
When not requested, each output is set to Low to avoid false
clocking of the load device.
Input Clock to Output Square Wave Generator
Figure 3 shows the MCLK_IN input having an internal
AC coupling capacitor. This allows either a square or sine
wave signal to be directly connected from a TCXO.
Therefore, an external series capacitor is not required.
LDO
The integrated low noise 1.8 V LDO provides power
internal to the NB3RL02 as well as a power source for an
external clock such as a TCX0. The input range of the LDO
allows the device to be powered directly from a single cell
Li battery. The LDO is enabled when either of the
CLK_REQn signals is High.
When disabled, the device turns off the LDO and enters a
low power shutdown mode consuming less than 1 mA from
the battery.
The LDO requires an output decoupling capacitor in the
range of 1 mF to 10 mF for compensation and high frequency
PSR. An input bypass capacitor of 1 mF or larger is
recommended.
MCLK _IN
C MCLK
Figure 3. Input Stage
The clock frequency band of the NB3RL02 is 9 MHz to
80 MHz with all performance metrics specified at 26 Mhz
and 52 MHz.
ORDERING INFORMATION
Device
NB3RL02FCT2G
Temperature Range
Package
Shipping†
−40°C to 85°C
WLCSP8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP8, 1.57x0.77
CASE 499BQ
ISSUE A
SCALE 4:1
È
È
D
PIN A1
REFERENCE
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO SPHERICAL
CROWNS OF SOLDER BALLS.
E
A3
DIE COAT
2X
0.10 C
TOP VIEW
DETAIL A
A
0.10 C
A1
8X
DIM
A
A1
A2
A3
b
D
E
e
A2
0.10 C
2X
DATE 01 SEP 2015
MILLIMETERS
MIN
MAX
0.50
−−−
0.13
0.17
0.30 REF
0.025 BSC
0.21
0.25
0.77 BSC
1.57 BSC
0.40 BSC
GENERIC
MARKING DIAGRAM*
0.05 C
NOTE 3
8X
SIDE VIEW
0.03 C
SEATING
PLANE
e
D
e
C
B
A
1
XXYYWW
XX = Specific Device Code
YY = Year
WW = Work Week
e/2
b
0.05 C A B
C
2
BOTTOM VIEW
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
RECOMMENDED
SOLDERING FOOTPRINT*
PACKAGE
OUTLINE
0.40
PITCH
8X
0.40
PITCH
0.23
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON56424E
WLCSP8, 1.57X0.77
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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