NB3U23CMNTAG

NB3U23C 1.2 V Dual Channel CMOS Buffer / Translator Description The NB3U23C is a 2−input, 2−output buffer/voltage translator for UFS (Universal Flash Storage) in portable consumer applications such as mobile phones, tablets, cameras, etc. This dual channel CMOS buffer accepts 1.8 V CMOS input and translates it to 1.2 V CMOS output. The device is powered using single supply of 1.2 V ±5%. The NB3U23C is packaged in 2 ultra−small 6−pin packages: the 6 pin SC70 and a 6 pin thin UDFN package. Features • • • • • • • • • http://onsemi.com MARKING DIAGRAMS 6 SC−70 SQ SUFFIX CASE 419B 1 Operating Frequency: 52 MHz (Max) Propagation Delay: 5 ns (Max) Low Standby Current: < 10 mA at 1.2 V VDD Low Phase Noise Floor: −150 dBc/Hz (Typ) Rise/Fall Times (tr/tf): 2 ns (Max) ESD Protection Exceeds JEDEC Standards ♦ 2000 V Human−Body Model (JS−001−2012) ♦ 200 V Machine Model (JESD22−A115C) ♦ 1000 V Charged−Device Model (JESDC101E) Operating Supply Voltage Range (VDD): 1.2 V ±5% Operating Temperature Range (Industrial): −40°C to 85°C These are Pb−Free Devices 23CMG G 1 23C = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. UDFN6 MN SUFFIX CASE 517CW C M CM = Device Code = Date Code VDD 5 IN1 1 IN2 3 1 2 6 OUT1 4 OUT2 2 GND Figure 1. Simplified Logic Diagram ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2014 April, 2014 − Rev. 6 1 Publication Order Number: NB3U23C/D NB3U23C IN1 GND IN2 1 2 3 1 6 OUT1 GND 2 5 VDD IN2 3 4 OUT2 VDD 5 SC70−6 Package IN1 OUT1 6 OUT2 4 UDFN6 Package Figure 2. Pinout Diagram (Top Views) Table 1. PIN DESCRIPTION Number Name Description 1 IN1 2 GND 3 IN2 4 OUT2 Output − Channel 2 5 VDD Power Supply Voltage 6 OUT1 Output − Channel 1 Input Clock Signal − Channel 1 Power Supply Ground (0 V) Input Clock Signal − Channel 2 Table 2. ATTRIBUTES Characteristic ESD Protection Value Human Body Model Machine Model Charge Device Model Moisture Sensitivity (Note 1) Flammability Rating 2 kV min 200 V min 1 kV min Level 1 Oxygen Index: 28 to 34 Transistor Count UL 94 V−0 @ 0.125 in 120 Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test II 1. For additional information, see Application Note AND8003/D. http://onsemi.com 2 NB3U23C Table 3. MAXIMUM RATINGS (Note 2) Symbol Parameter Rating Unit 3.6 V –0.5 ≤ VI ≤ 2.5 V 25 mA Operating Temperature Range, Industrial −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 210 126 245 172 °C/W 100 150 °C/W 260 °C VDD Supply Voltage Vin Input Voltage ID Output Current TA qJC Thermal Resistance (Junction−to−Case) Tsol Wave Solder Condition 1 0 lfpm 500 lfpm (Note 3) 0 lfpm 500 lfpm (Note 3) (Note 3) Condition 2 SC70−6 UDFN−6 SC70−6 UDFN−6 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected. 3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power). Table 4. ELECTRICAL CHARACTERISTICS (VDD = 1.2 ±5% V, GND = 0 V, TA = −40°C to +85°C) Symbol Characteristic Conditions DIDD Power Supply Current (Single Channel Switching @ 52 MHz) CL = 20 pF CL = 5 pF CL = 1 pF 2.5 1.5 1 Power Supply Current (Both Channels Switching @ 52 MHz) CL = 20 pF CL = 5 pF CL = 1 pF 5 3 2 Ioff Standby Current VIH Input High Voltage VIL Input Low Voltage VOH Output High Voltage VOL Output Low Voltage Cin Input Capacitance Fclk Operating Frequency Range tPD Propagation Delay Min Typ Max Unit mA mA 10 mA 0.65 * VDD 1.98 V 0 0.35 * VDD V CL = 20 pF RL = 100 kW 0.75 * VDD VDD V CL = 20 pF RL = 100 kW 0 0.25 * VDD V 5 pF 52 MHz 5 ns Vi = VIH Max or GND; VDD = 1.2 V, No Output Load 0 INx to OUTx CL = 20 pF, RL = 100 kW Phase Noise Floor Density (Notes 4 and 5) CL = 20 pF RL = 100 kW −150 Additive RMS Phase Jitter (Notes 5 and 6) CL = 20 pF RL = 100 kW Offset Frequency Range: 50 kHz to 10 MHz 0.15 DC Output Duty Cycle (Note 7) Input Duty Cycle = 50%, Min Input Slew Rate = 1 V/ns tr/tf Output Rise/Fall Times 0.2 * VDD to 0.8 * VDD CL = 20 pF RL = 100 kW 45 dBc/Hz 0.25 ps 55 % 2 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. White noise floor. 5. This parameter refers to the random jitter only. 6. The output RMS phase jitter can be calculated using the following equation: (Output RMS Phase Jitter)2 = (Input RMS Phase Jitter)2 + (Additive RMS Phase Jitter)2 7. Measured with input voltage swing from 0 V to 1.8 V. http://onsemi.com 3 NB3U23C INx CL = 20 pF RL = 100 kW OUTx GND Figure 3. Typical Test Setup for Evaluation 0 −20 POWER (dBc/Hz) −40 −60 −80 −100 −120 −140 −160 −180 1.00E+02 1.00E+03 1.00E+04 1.00E+05 1.00E+06 1.00E+07 OFFSET FREQUENCY (Hz) Figure 4. Typical Phase Noise Plot at 50 MHz Carrier Frequency ORDERING INFORMATION Package Shipping† NB3U23CSQTCG SC−70−6 (Pb−Free) 3000 / Tape & Reel NB3U23CMNTAG UDFN6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 1 SCALE 2:1 DATE 11 DEC 2012 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 GENERIC MARKING DIAGRAM* 6 XXXMG G 6X 0.30 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 1 2.50 0.65 PITCH XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Date Code orientation and/or position may vary depending upon manufacturing location. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y DATE 11 DEC 2012 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 2: CANCELLED STYLE 3: CANCELLED STYLE 4: PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 STYLE 7: PIN 1. SOURCE 2 2. DRAIN 2 3. GATE 1 4. SOURCE 1 5. DRAIN 1 6. GATE 2 STYLE 8: CANCELLED STYLE 9: PIN 1. EMITTER 2 2. EMITTER 1 3. COLLECTOR 1 4. BASE 1 5. BASE 2 6. COLLECTOR 2 STYLE 10: PIN 1. SOURCE 2 2. SOURCE 1 3. GATE 1 4. DRAIN 1 5. DRAIN 2 6. GATE 2 STYLE 11: PIN 1. CATHODE 2 2. CATHODE 2 3. ANODE 1 4. CATHODE 1 5. CATHODE 1 6. ANODE 2 STYLE 12: PIN 1. ANODE 2 2. ANODE 2 3. CATHODE 1 4. ANODE 1 5. ANODE 1 6. CATHODE 2 STYLE 13: PIN 1. ANODE 2. N/C 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 14: PIN 1. VREF 2. GND 3. GND 4. IOUT 5. VEN 6. VCC STYLE 15: PIN 1. ANODE 1 2. ANODE 2 3. ANODE 3 4. CATHODE 3 5. CATHODE 2 6. CATHODE 1 STYLE 16: PIN 1. BASE 1 2. EMITTER 2 3. COLLECTOR 2 4. BASE 2 5. EMITTER 1 6. COLLECTOR 1 STYLE 17: PIN 1. BASE 1 2. EMITTER 1 3. COLLECTOR 2 4. BASE 2 5. EMITTER 2 6. COLLECTOR 1 STYLE 18: PIN 1. VIN1 2. VCC 3. VOUT2 4. VIN2 5. GND 6. VOUT1 STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 STYLE 22: PIN 1. D1 (i) 2. GND 3. D2 (i) 4. D2 (c) 5. VBUS 6. D1 (c) STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 25: PIN 1. BASE 1 2. CATHODE 3. COLLECTOR 2 4. BASE 2 5. EMITTER 6. COLLECTOR 1 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 29: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE/ANODE 6. CATHODE STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN6 1.2x1.4, 0.4P CASE 517CW ISSUE O SCALE 4:1 A B D PIN ONE REFERENCE 2X 0.05 C 2X 0.05 C ÍÍ ÍÍ ÍÍ L1 E DETAIL A DIM A A1 A3 b D E e L L1 OPTIONAL TERMINAL CONSTRUCTIONS TOP VIEW ÉÉÉ ÇÇÇ ÇÇÇ EXPOSED Cu 0.10 C A 0.08 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25MM FROM THE TERMINAL TIP. L L DETAIL B DETAIL A 1 MOLD CMPD DETAIL B A1 A3 SIDE VIEW NOTE 4 DATE 09 JAN 2014 C SEATING PLANE MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.15 0.25 1.20 BSC 1.40 BSC 0.40 BSC 0.50 0.60 --0.15 GENERIC MARKING DIAGRAM* OPTIONAL CONSTRUCTION XM 6X X M L 3 = Specific Device Code = Month Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 6 4 6X e b 0.10 M C A B 0.05 M C BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 6X 0.65 PACKAGE OUTLINE 1.50 1 0.40 PITCH 6X 0.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON81510F UDFN6 1.2X1.4, 0.4P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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