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NB4N11MDTR2G

NB4N11MDTR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TSSOP-8_3X3MM

  • 描述:

    IC RCVR/BUFF/XLATOR MULTI 8TSSOP

  • 数据手册
  • 价格&库存
NB4N11MDTR2G 数据手册
3.3 V, 2.5 Gb/s Multi Level Clock/Data Input to CML Receiver/Buffer/Translator NB4N11M Description www.onsemi.com T h e N B 4 N 11 M i s a d i f f e r e n t i a l 1 −t o −2 c l o c k / d a t a distribution/translation chip with CML output structure, targeted for high−speed clock/data applications. The device is functionally equivalent to the EP11, LVEP11, SG11 or 7L11M devices. Device produces two identical differential output copies of clock or data signal operating up to 2.5 GHz or 2.5 Gb/s, respectively. As such, NB4N11M is ideal for SONET, GigE, Fiber Channel, Backplane and other clock/data distribution applications. Inputs accept LVPECL, CML, LVCMOS, LVTTL, or LVDS (See Table 5). The CML outputs are 16 mA open collector (See Figure 18) which requires resistor (RL) load path to VTT termination voltage. The open collector CML outputs must be terminated to VTT at power up. Differential outputs produces current–mode logic (CML) compatible levels when receiver loaded with 50 W or 25 W loads connected to 1.8 V, 2.5 V or 3.3 V supplies (see Figure 19). This simplifies device interface by eliminating a need for coupling capacitors. The device is offered in a small 8−pin TSSOP package. Application notes, models, and support documentation are available at www.onsemi.com. 8 1 TSSOP−8 DT SUFFIX CASE 948R MARKING DIAGRAM* 8 1 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Features • • • • • • • • • Maximum Input Clock Frequency > 2.5 GHz Maximum Input Data Rate > 2.5 Gb/s Typically 1 ps of RMS Clock Jitter Typically 10 ps of Data Dependent Jitter @ 2.5 Gb/s, RL = 25 W 420 ps Typical Propagation Delay 150 ps Typical Rise and Fall Times Operating Range: VCC = 3.0 V to 3.6 V with VEE = 0 V and VTT = 1.8 V to 3.6 V Functionally Compatible with Existing 2.5 V / 3.3 V LVEL, LVEP, EP, and SG Devices These Devices are Pb−Free, Halogen Free and are RoHS Compliant E11M ALYWG G *For additional marking information, refer to Application Note AND8002/D. Q0 Q0 D D Q1 Q1 Figure 1. Functional Block Diagram ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. © Semiconductor Components Industries, LLC, 2005 May, 2021 − Rev. 3 1 Publication Order Number: NB4N11M/D NB4N11M Q0 1 8 VCC Q0 2 7 D Q1 3 6 D Q1 4 5 VEE Figure 2. Pinout (Top View) and Logic Diagram Table 1. Pin Description Pin Name I/O 1 Q0 CML Output Noninverted differential output. Typically receiver terminated with 50 W resistor to VTT. Open collector CML outputs must be terminated to VTT at powerup. Description 2 Q0 CML Output Inverted differential output. Typically receiver terminated with 50 W resistor to VTT. Open collector CML outputs must be terminated to VTT at powerup. 3 Q1 CML Output Noninverted differential output. Typically receiver terminated with 50 W resistor to VTT. Open collector CML outputs must be terminated to VTT at powerup. 4 Q1 CML Output Inverted differential output. Typically receiver terminated with 50 W resistor to VTT. Open collector CML outputs must be terminated to VTT at powerup. 5 VEE − Negative supply voltage. 6 D LVPECL, CML, HSTL, LVCMOS, LVDS, LVTTL Input Inverted differential input. 7 D LVPECL, CML, HSTL, LVCMOS, LVDS, LVTTL Input Noninverted differential input. 8 VCC − Positive supply voltage. www.onsemi.com 2 NB4N11M Table 2. ATTRIBUTES Characteristics Value ESD Protection Human Body Model Machine Model > 1000 V > 70 V Moisture Sensitivity (Note 1) 8−TSSOP Level 3 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Transistor Count 197 Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. Table 3. MAXIMUM RATINGS Symbol Rating Unit VCC Positive Power Supply Parameter VEE = −0.5 V Condition 1 Condition 2 4 V VEE Negative Power Supply VCC = +0.5 V −4 V VI Positive Input Negative Input VEE = 0 V VCC = 0 V 4 −4 V V VO Output Voltage VEE + 600 VCC + 400 mV mV TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) (Note 2) 0 lfpm 500 lfpm TSSOP−8 TSSOP−8 190 130 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) 1S2P (Note 2) TSSOP−8 41 to 44 °C/W Tsol Wave Solder < 3 Sec @ 260°C 265 °C VI = VCC +0.4 V VI = VEE –0.4 V Minimum Maximum Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. JEDEC standard multilayer board − 1S2P (1 signal, 2 power) with 8 filled thermal vias under exposed pad. www.onsemi.com 3 NB4N11M Table 4. DC CHARACTERISTICS, CLOCK Inputs, CML Outputs VCC = 3.0 V to 3.6 V, VEE = 0 V, TA = −40°C to +85°C Symbol ICC Characteristic Min Power Supply Current (Inputs and Outputs Open) Typ Max Unit 25 35 mA RL = 50 W, VTT = 3.6 V to 2.5 V VOH Output HIGH Voltage (Note 3) VTT − 60 VTT − 10 VTT mV VOL Output LOW Voltage (Note 3) VTT − 1100 VTT − 800 VTT − 640 mV 640 780 1000 mV |VOD| Differential Output Voltage Magnitude RL = 25 W, VTT = 3.6 V to 2.5 V $5% VOH Output HIGH Voltage (Note 3) VTT − 60 VTT − 10 VTT mV VOL Output LOW Voltage (Note 3) VTT − 550 VTT − 400 VTT − 320 mV 320 390 500 mV |VOD| Differential Output Voltage Magnitude RL = 50 W, VTT = 1.8 V $5% VOH Output HIGH Voltage (Note 3) VTT − 170 VTT − 10 VTT mV VOL Output LOW Voltage (Note 3) VTT − 1100 VTT − 800 VTT − 640 mV 570 780 1000 mV |VOD| Differential Output Voltage Magnitude RL = 25 W, VTT = 1.8 V $5% VOH Output HIGH Voltage (Note 3) VTT − 85 VTT − 10 VTT mV VOL Output LOW Voltage (Note 3) VTT − 500 VTT − 400 VTT − 320 mV 285 390 500 mV VEE VCC mV |VOD| Differential Output Voltage Magnitude DIFFERENTIAL INPUT DRIVEN SINGLE−ENDED (Figures 14 and 16) Vth Input Threshold Reference Voltage Range (Note 5) VIH Single−ended Input HIGH Voltage Vth + 100 VCC + 400 mV VIL Single−ended Input LOW Voltage VEE − 400 Vth − 100 mV DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY (Figures 15 and 17) VIHD Differential Input HIGH Voltage VEE VCC + 400 mV VILD Differential Input LOW Voltage VEE − 400 VCC − 100 mV VCMR Input Common Mode Range (Differential Configuration) VEE VCC mV |VID| Differential Input Voltage Magnitude (|VIHD − VILD|) (Note 7) 100 VCC − VEE mV CIN Input Capacitance (Note 7) 1.5 pF NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 3. CML outputs require RL receiver termination resistors to VTT for proper operation. Outputs must be connected through RL to VTT at power up. The output parameters vary 1:1 with VTT. 4. Input parameters vary 1:1 with VCC. 5. Vth is applied to the complementary input when operating in single−ended mode. 6. VCMR (MIN) varies 1:1 with VEE, VCMR max varies 1:1 with VCC. 7. Parameter guaranteed by design and evaluation but not tested in production. www.onsemi.com 4 NB4N11M Table 5. AC CHARACTERISTICS VCC = 3.0 V to 3.6 V, VEE = 0 V; (Note 8) −40°C Characteristic Symbol Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit VOUTPP Output Voltage Amplitude (RL = 50 W) fin ≤ 1 GHz (See Figure 12) fin ≤ 1.5 GHz fin ≤ 2.5GHz 550 400 150 660 640 400 550 400 150 660 640 400 550 400 150 660 640 400 VOUTPP Output Voltage Amplitude (RL = 25 W) fin ≤ 1 GHz (See Figure 12) fin ≤ 1.5 GHz fin ≤ 2.5GHz 280 280 100 370 360 300 280 280 100 370 360 400 280 280 100 370 360 400 fDATA Maximum Operating Data Rate 1.5 2.5 1.5 2.5 1.5 2.5 tPLH, tPHL Propagation Delay to Output Differential @ 0.5 GHz 300 420 600 300 420 600 300 420 600 ps tSKEW Duty Cycle Skew (Note 9) Within Device Skew Device to Device Skew (Note 13) 2 5 20 20 25 100 2 5 20 20 25 100 2 5 20 20 25 100 ps tJITTER RMS Random Clock Jitter RL = 50 W and fin = 750 MHz RL = 25 W (Note 11) fin = 1.5 GHz fin = 2.5 GHz Peak−to−Peak Data Dependent Jitter RL = 50 W fDATA = 1.5 Gb/s (Note 12) fDATA = 2.5 Gb/s Peak−to−Peak Data Dependent Jitter RL = 25 W fDATA = 1.5 Gb/s (Note 12) fDATA = 2.5 Gb/s 1 1 1 3 3 3 1 1 1 3 3 3 1 1 1 3 3 3 15 20 55 85 15 20 55 85 15 20 55 85 5 10 35 35 5 10 35 35 5 10 35 35 VINPP Input Voltage Swing/Sensitivity (Differential Configuration) (Note 10) tr tf Output Rise/Fall Times @ 0.5 GHz (20% − 80%) 100 Q, Q 100 150 300 mV mV Gb/s 100 150 300 ps mV 150 300 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 8. Measured by forcing VINPP (MIN) from a 50% duty cycle clock source. All output loaded with an external RL = 50 W and RL = 25 W to VTT. Outputs must be connected through RL to VTT at power up. Input edge rates 150 ps (20% − 80%). 9. Duty cycle skew is measured between differential outputs using the deviations of the sum of Tpw− and Tpw+ @ 0.5 GHz. 10. VINPP (MAX) cannot exceed VCC − VEE. Input voltage swing is a single−ended measurement operating in differential mode. 11. Additive RMS jitter with 50% duty cycle clock signal. 12. Additive peak−to−peak data dependent jitter with input NRZ data signal (PRBS 223−1). 13. Device to device skew is measured between outputs under identical transition @ 0.5 GHz. 0.8 OUTPUT VOLTAGE AMPLITUDE (mV) OUTPUT VOLTAGE AMPLITUDE (mV) 800 700 RL = 50 W 600 500 400 RL = 25 W 300 200 100 0 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 0.7 RL = 50 W 0.6 0.5 0.4 RL = 25 W 0.3 0.2 0.1 0 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 INPUT CLOCK FREQUENCY (GHz) INPUT CLOCK FREQUENCY (GHz) (VCC − VEE = 3.3 V VTT = 3.3 V @ 255C Vin = 100 mV) (VCC − VEE = 3.0 V VTT = 1.71 V @255C Vin = 100 mV) 3 Figure 3. Output Voltage Amplitude (VOUTPP) versus Input Clock Frequency (fIN) at Ambient Temperature (Typical) www.onsemi.com 5 NB4N11M NB4N11M 80 35 70 30 25 50 TIME (ps) TIME (ps) 60 40 −40°C 30 85°C 15 10 20 85°C 10 0 0.5 0.75 1 1.25 1.5 1.75 2 5 25°C −40°C 0 2.25 2.5 2.75 3 0.5 0.75 1 1.25 1.5 1.75 2 25°C 2.25 2.5 2.75 3 INPUT CLOCK FREQUENCY (GHz) INPUT CLOCK FREQUENCY (GHz) Figure 4. Data Dependent Jitter vs. Frequency and Temperature (VCC − VEE = 3.3 V; VTT = 3.3 V @ 255C; VIN = 100 mV; PRBS 223−1; RL = 50 W) Figure 5. Data Dependent Jitter vs. Frequency and Temperature (VCC − VEE = 3.3 V; VTT = 3.3 V @ 255C; VIN = 100 mV; PRBS 223−1; RL = 25 W) 600 550 550 500 500 450 TIME (ps) 600 tPD 400 350 300 −40 450 tPD 400 350 25 300 VEE − 0.5 V 85 V CC * V EE VCC + 0.5 V 2 TEMPERATURE (°C) INPUT OFFSET VOLTAGE (V) Figure 6. Typical Propagation Delay vs. Temperature (VCC − VEE = 3.3 V; VTT = 3.3 V @ 255C; Vin = 100 mV; RL = 50 W) Figure 7. Typical Propagation Delay vs. Input Offset Voltage (VCC − VEE = 3.3 V; VTT = 3.3 V @ 255C; Vin = 100 mV RL = 50 W) 35 30 CURRENT (mA) TIME (ps) 20 25 ICC 20 15 10 5 0 −40 25 TEMPERATURE (°C) Figure 8. Supply Current vs. Temperature www.onsemi.com 6 85 VOLTAGE (100 mV/div) VOLTAGE (200 mV/div) NB4N11M DDJ = 5 ps TIME (266.8 ps/div) DDJ = 3 ps TIME (266.8 ps/div) VOLTAGE (100 mV/div) VOLTAGE (200 mV/div) Figure 9. Typical Differential Output Waveform at 750 Mb/s (RL = 50 W Left Plot, RL = 25 W Right Plot, Vin = 100 mV, System DDJ = 24 ps) DDJ = 12 ps TIME (133.2 ps/div) DDJ = 5 ps TIME (133.2 ps/div) VOLTAGE (100 mV/div) VOLTAGE (200 mV/div) Figure 10. Typical Differential Output Waveform 1.5 Gb/s (RL = 50 W Left Plot, RL = 25 W Right Plot, Vin = 100 mV, System DDJ = 25 ps) DDJ = 20 ps TIME (80 ps/div) DDJ = 7 ps TIME (80 ps/div) Figure 11. Typical Differential Output Waveform 2.5 Gb/s (RL = 50 W Left Plot, RL = 25 W Right Plot, Vin = 100 mV, System DDJ = 24 ps) www.onsemi.com 7 NB4N11M D VINPP = VIH(D) − VIL(D) D Q VOUTPP = VOH(Q) − VOL(Q) Q tPHL tPLH Figure 12. AC Reference Measurement VTT 50 W 50 W Q DUT Driver Device D Z = 50 W Receiver Device Q D Z = 50 W Figure 13. Typical Termination for Output Driver and Device Evaluation D D D D Vth Vth Figure 14. Differential Input Driven Single−Ended VCC Vthmax Vthmin GND VCC VIHmax VILmax D Vth Figure 15. Differential Inputs Driven Differentially VIHCLKmax VCMmax D VIH Vth VIL VCMR D VIHmin VILmin VCMmax GND Figure 16. Vth Diagram VILCLKmax VID = VIHD − VILD VIHDtyp VILDtyp VIHDmin VILDmin Figure 17. VCMR Diagram www.onsemi.com 8 NB4N11M VCC Input ESD D 1.25 kW RC 1.25 kW RC 1.25 kW 1.25 kW Input ESD D Q Q IN IN Input ESD Input ESD Internal Current Source 16 mA Current Source VEE Input VEE Output Figure 18. CML Input and Output Structure www.onsemi.com 9 NB4N11M VTTA = VCCA VCCA = 1.8 V 2.5 V or 3.3 V VCC = 3.3 V Z = 50 W 50 W 50 W Receiver A Z = 50 W NB4N11M VTTB = VCCB 50 W VTTB = VCCB 50 W Z = 50 W 50 W VCCB = 1.8 V 2.5 V or 3.3 V 50 W Z = 50 W Receiver B VEE = 0 V VTTC = VCCC VCCC = 1.8 V 2.5 V or 3.3 V VCC = 3.3 V 75 W Z = 75 W NB4N11M 75 W Receiver C Z = 75 W VTTD = VCCD Z = 100 W 100 W 100 W VCCD = 1.8 V 2.5 V or 3.3 V Z = 100 W Receiver D VEE = 0 V Figure 19. Typical Examples of the Application Interface ORDERING INFORMATION Device NB4N11MDTR2G Package Shipping† TSSOP−8 (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP 8 CASE 948R−02 ISSUE A DATE 04/07/2000 SCALE 2:1 8x 0.15 (0.006) T U 0.10 (0.004) S 2X L/2 L 8 5 1 PIN 1 IDENT 0.15 (0.006) T U K REF T U S V 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S 0.25 (0.010) B −U− A −V− S M M F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D −W− G DETAIL E DOCUMENT NUMBER: DESCRIPTION: 98AON00236D TSSOP 8 DIM A B C D F G K L M MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 0.80 1.10 0.05 0.15 0.40 0.70 0.65 BSC 0.25 0.40 4.90 BSC 0_ 6_ INCHES MIN MAX 0.114 0.122 0.114 0.122 0.031 0.043 0.002 0.006 0.016 0.028 0.026 BSC 0.010 0.016 0.193 BSC 0_ 6_ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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