NBA3N011SSNT1G

NBA3N011S 3.3 V Automotive Grade LVDS Driver Description The NBA3N011S is a Low Voltage Differential Signaling (LVDS) driver for low power and high data rate applications. The device accepts LVCMOS/TTL input and translates it to LVDS and is designed to support data rates higher than 400 Mbps (200 MHz). The driver provides low EMI with a typical output swing of 350 mV. The device can be paired with its companion single line receiver NBA3N012C or with any other LVDS receiver for high speed LVDS interface. The LVDS output is designed as a 3.5 mA (typical) current mode driver allowing low power dissipation even at the high frequency. NBA3N011S is offered in a 5 lead SOT23 package, shipping in 3000 pcs tape & reel. Features • • • • • • • • • • • • Compatible with TIA/EIA−644A Standard Automotive Grade AECQ−100 Grade 1 > 400 Mbps (200 MHz) Data Rate Operating Range: VDD = 3.3 V ± 0.3 V Maximum 700 ps Differential Skew Maximum Propagation Delay of 1.5 ns Low Power Dissipation (Typical 23 mW @ 3.3 V) SOT23−5 Lead Package with Pinout optimized for easy PCB Layout ±350 mV Differential Signaling Power Off Protection (Outputs in Tri−state) Temperature Operating Range −40°C to +125°C These are Pb−Free Devices Typical Applications: • Automotive: Head Lamp Lighting for Cars • Telecom: Wireless, Microwave and Optical Table 1. PIN DESCRIPTION Pin Number Pin Name I/O Type www.onsemi.com MARKING DIAGRAM 5 SOT23−5 DT SUFFIX CASE 527AH 011AYWG G 1 011 A Y W G = Specific Device Code = Assembly Code = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) LOGIC DIAGRAM Q IN Q PINOUT DIAGRAM VDD 1 GND 2 Q 3 5 IN 4 Q Description 1 VDD Power Supply Pin 2 GND 3 Q Output Inverting Output Pin 4 Q Output Non−Inverting Output 5 IN Input Input Pin Ground Pin ORDERING INFORMATION Device Package Shipping† NBA3N011SSNT1G SOT23−5 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 December, 2016 − Rev. 0 1 Publication Order Number: NBA3N011S/D NBA3N011S Table 2. ATTRIBUTES (Note 1) Characteristics ESD Protection Value Human Body Model (JEDEC Standard 22, Method A114−E) All Pins ≥ 8 kV Charge Device Model (JEDEC Standard 22, Method C101D) All Pins ≥ 1.25 kV Moisture Sensitivity (Note 1) Flammability Rating Level 1 Oxygen Index: 28 to 34 UL 94 Code V−0 A 0.125 in 28 to 34 1. For additional information, see Application Note AND8003/D Table 3. MAXIMUM RATINGS Symbol Parameter Rating Unit −0.30 ≤ VDD ≤ 4.0 V Input Voltage (IN) LVCMOS −0.30 to (VDD + 0.30) V Output Voltage (Q/Q) LVDS −0.30 to +3.90 V 24 mA VDD Supply voltage VIN VQ IOS Output Short Circuit Current LVDS Tj Tstg 135 °C −65 to +150 °C Maximum Junction Temperature Storage Temperature Range 107 °C/W 138.5 °C/W Lead Temperature Soldering (4 Seconds) – SOLDERRM/D 260 °C Package Power Dissipation @ 25°C − Derating of 7.22 mW/°C above 25°C 794 mW qJC Thermal resistance (Junction−to−Case) – (Note 3) qJA Thermal resistance (Junction−to−Ambient) – (Note 3) Tsol PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. The maximum ratings applied are individual stress limit values and not valid simultaneously. 3. JEDEC standard multilayer board −2S2P (2 signal 2 power) Table 4. DC CHARACTERISTICS VDD = 3.3 V ± 0.3 V, GND = 0 V, TA −40°C to +125°C Symbol Parameter IDD Power Supply Current Test Conditions Min Typ Max Unit No−Load (Pin: VDD; VIN = VDD or GND) 5 8 mA RL = 100 W (Pin: VDD; VIN = VDD or GND) 7 10 mA VIH Input High Voltage Pin: IN 2.0 VDD V VIL Input Low Voltage Pin: IN GND 0.8 V IIH Input High Current Pin: IN; VIN = 3.3 V or 2.4 V ±2 ±10 mA IIL Input Low Current Pin: IN; VIN = GND or 0.5 V ±1 ±10 mA VCL Input Clamp Voltage CIN Input Capacitance ICL = −18 mA −1.5 −0.6 V 3 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NBA3N011S Table 5. ELECTRICAL CHARACTERISTICS VDD = 3.3 V ± 0.3 V, GND = 0 V, TA −40°C to +125°C, Pin: Q/Q Symbol Parameter ⎮VOD⎜ Differential Output Voltage D⎜VOD⎜ Change in Differential Output Voltage magnitude VOS Offset Voltage DVOS Change in Offset Voltage magnitude IOFF Leakage Current − Power−off IOSD Differential Short Circuit Output Current (Note 4) IOS Output Short Circuit Current (Note 4) COUT Output Capacitance Test Conditions Min Typ Max Unit RL = 100 W, Figures 1 & 2 250 350 450 mV 3 35 mV 1.220 1.375 V RL = 100 W, Figure 1 1.125 1 50 mV VQ = 3.6 V or GND, VDD = 0 V 0 ±1 ±10 mA VOD = 0 V −5 −12 mA VQ and VQ = 0 V −6 −24 mA 3 pF 4. − minus sign indicated only direction. Current into the device is defined as positive. IOS/IOSD is specified as magnitude only. Table 6. SWITCHING CHARACTERISTICS VDD = 3.3 V ± 0.3 V, GND = 0 V, TA −40°C to +125°C, F = 1 MHz, ZO = 50 W, tr, tf ≤ 1 ns (10% to 90%) − (Note 5) Parameters Min Typ Max Unit tpHLD High to Low Differential Propagation Delay 0.3 1.0 1.5 ns tpLHD Low to High Differential Propagation Delay 0.3 1.1 1.5 ns tr Rise Time – Transition Low to High 0.2 0.5 1.0 ns tf Fall Time – Transition High to Low 0.2 0.5 1.0 ns Symbol Differential Pulse Skew |tpHLD - tpLHD| (Note 6) 0 0.1 0.7 ns tSKD(PP)1 Differential Part to Part Skew – (Note 7) 0 0.2 1.0 ns tSKD(PP)2 Differential Part to Part Skew – (Note 8) 0 0.4 1.2 ns tSKD(P) fMAX Maximum Operating Frequency – (Note 9) 250 MHz 5. Test Conditions for the above − RL = 100 W, CL = 15 pF (includes Load & Jig Capacitance), Figures 3 and 4 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions 6. |tPHLD − tPLHD|, is the magnitude difference in differential propagation delay time between the positive going edge and the negative going edge of the same channel. 7. Differential Part to Part Skew, is defined as the difference between the minimum and maximum specified differential propagation delays. This specification applies to devices at the same VDD and within 5°C of each other within the operating temperature range. 8. Part to part skew, is the differential channel to channel skew of any event between devices. This specification applies to devices over recommended operating temperature and voltage ranges, and across process distribution. tSKD2 is defined as |Max − Min| differential propagation delay. 9. fMAX Input Conditions: tr = tf < 1 ns (0% to 100%), Duty Cycle 50%, 0 V to 3 V. fMAX Output Conditions: VOD > 250 mV, Duty Cycle = 45%/55% www.onsemi.com 3 NBA3N011S PARAMETER MEASUREMENT: Q Q 2V 3.75 kW RL / 2 IN V OD VOS IN Power Supply RL DC 3.75 kW RL /2 0 .8 V VOD V TEST Q Q Vary VTEST 0 V to 2.4 V Figure 1. DC Test Circuit for Differential Driver Figure 2. Full Load DC Test Circuit for Differential Driver Q CL IN Generator RL 50E Q CL Figure 3. Propagation Delay & Transition Time Test Circuit for Differential Driver 3V 1.5V IN t pLHD 0V t pHLD Q VOH Differential 0V VOL Q 80% VDIFF = [Q] − [Q] VDIFF 0V 20% tf tr Figure 4. Propagation Delay & Transition Time Waveforms for Differential Driver www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23, 5 Lead CASE 527AH ISSUE A DATE 09 JUN 2021 q q q q q q1 q2 GENERIC MARKING DIAGRAM* XXXM XXX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON34320E SOT−23, 5 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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