NBXSBA051LNHTAG

NBXSBA051 2.5/3.3 V, 533.33 MHz LVPECL Clock Oscillator The NBXSBA051, single frequency, crystal oscillator (XO) is designed to meet today’s requirements for 2.5/3.3 V LVPECL clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide 533.33 MHz, ultra low jitter and phase noise LVPECL differential output. This device is a member of ON Semiconductor’s PureEdget clock family that provides accurate and precision clock solutions. Available in 5 mm x 7 mm SMD (CLCC) package on 16 mm tape and reel in quantities of 100 and 1,000. Features • • • • • • • • • LVPECL Differential Output Uses High Q Fundamental Mode Crystal and PLL Multiplier Ultra Low Jitter and Phase Noise − 0.5 ps (12 kHz − 20 MHz) Output Frequency − 533.33 MHz Hermetically Sealed Ceramic SMD Package RoHS Compliant Operating Range: 2.5 V ±5% or 3.3 V ±10% Total Frequency Stability − $50 PPM This is a Pb−Free Device http://onsemi.com MARKING DIAGRAM 6 PIN CLCC LN SUFFIX CASE 848AB NBXSBA051 = NBXSBA051 (±50 PPM) 533.3300 = Output Frequency (MHz) AA = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Applications • Networking • Storage • DDR3 NBXSBA051 533.3300 AAWLYYWWG Package Shipping† NBXSBA051LN1TAG CLCC−6 1000/Tape & Reel (Pb−Free) NBXSBA051LNHTAG CLCC−6 100/Tape & Reel (Pb−Free) VDD 6 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. CLK CLK 5 4 PLL Clock Multiplier Crystal 1 OE 2 NC 3 GND Figure 1. Simplified Logic Diagram © Semiconductor Components Industries, LLC, 2011 July, 2011 − Rev. 0 1 Publication Order Number: NBXSBA051/D NBXSBA051 OE 1 6 VDD NC 2 5 CLK GND 3 4 CLK Figure 2. Pin Connections (Top View) Table 1. PIN DESCRIPTION ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Pin No. Symbol I/O Description 1 OE LVTTL/LVCMOS Control Input 2 NC N/A No Connect. 3 GND Power Supply Ground 0 V 4 CLK LVPECL Output Non−Inverted Clock Output. Typically loaded with 50 W receiver termination resistor to VTT = VDD − 2 V. 5 CLK LVPECL Output Inverted Clock Output. Typically loaded with 50 W receiver termination resistor to VTT = VDD − 2 V. 6 VDD Power Supply Output Enable Pin. When left floating pin defaults to logic HIGH and output is active. See OE pin description Table 2. Positive power supply voltage. Voltage should not exceed 2.5 V ±5% or 3.3 V ±10%. Table 2. OUTPUT ENABLE TRI−STATE FUNCTION OE Pin Output Pins Open Active HIGH Level Active LOW Level High Z Table 3. ATTRIBUTES Characteristic Value Internal Default State Resistor ESD Protection 170 kW Human Body Model Machine Model 2 kV 200 V Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test 1. For additional Moisture Sensitivity information, refer to Application Note AND8003/D. Table 4. MAXIMUM RATINGS Symbol Rating Units VDD Positive Power Supply Parameter Condition 1 GND = 0 V 4.6 V Iout LVPECL Output Current Continuous Surge 25 50 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −55 to +120 °C Tsol Wave Solder 260 °C See Figure 5 Condition 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 2 NBXSBA051 Table 5. DC CHARACTERISTICS (VDD = 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 2) Characteristic Symbol Conditions Min. Typ. Max. Units 95 105 mA IDD Power Supply Current VIH OE Input HIGH Voltage 2000 VDD mV VIL OE Input LOW Voltage GND − 300 800 mV IIH Input HIGH Current OE −100 +100 mA IIL Input LOW Current OE −100 +100 mA VOH Output HIGH Voltage VDD−1195 VDD−945 mV VOL Output LOW Voltage VDD−1945 VDD−1600 mV VOUTPP Output Voltage Amplitude 700 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. See Figure 4. Table 6. AC CHARACTERISTICS (VDD = 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 3) Characteristic Symbol fCLKOUT Df FNOISE Conditions Min. Output Clock Frequency Frequency Stability − NBXSBA051 Phase−Noise Performance fCLKout = 533.33 MHz (See Figure 3) Typ. Max. 533.33 (Note 4) Units MHz ±50 ppm 100 Hz of Carrier −90 dBc/Hz 1 kHz of Carrier −108 dBc/Hz 10 kHz of Carrier −115 dBc/Hz 100 kHz of Carrier −117 dBc/Hz 1 MHz of Carrier −123 dBc/Hz 10 MHz of Carrier −150 12 kHz to 20 MHz 0.5 0.7 dBc/Hz ps tjit(F) RMS Phase Jitter tjitter Cycle to Cycle, RMS 1000 Cycles 1.5 8 ps Cycle to Cycle, Peak−to−Peak 1000 Cycles 10 30 ps Period, RMS 10,000 Cycles 1 4 ps Period, Peak−to−Peak 10,000 Cycles 7 20 ps 200 ns 50 52 % ps tOE/OD tDUTY_CYCLE Output Enable/Disable Time Output Clock Duty Cycle (Measured at Cross Point) 48 tR Output Rise Time (20% and 80%) 250 400 tF Output Fall Time (80% and 20%) 250 400 ps 1 5 ms 1st Year 3 ppm Every Year After 1st 1 ppm tstart Start−up Time Aging NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. See Figure 4. 4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging. http://onsemi.com 3 NBXSBA051 Figure 3. Typical Phase Noise Plot Table 7. RELIABILITY COMPLIANCE ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Parameter Standard Method Shock Mechanical MIL−STD−833, Method 2002, Condition B Solderability Mechanical MIL−STD−833, Method 2003 Vibration Mechanical MIL−STD−833, Method 2007, Condition A Solvent Resistance Mechanical MIL−STD−202, Method 215 Thermal Shock Environment MIL−STD−833, Method 1011, Condition A Moisture Level Sensitivity Environment MSL1 260°C per IPC/JEDEC J−STD−020D http://onsemi.com 4 NBXSBA051 NBXSBA051 Zo = 50 W Q D Receiver Device Driver Device Q D Zo = 50 W 50 W 50 W VTT VTT = VDD − 2.0 V Figure 4. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices.) temp. 260°C 20 − 40 sec. max. peak Temperature (°C) 260 6°C/sec. max. 3°C/sec. max. 217 ramp−up 175 150 cooling pre−heat reflow 60180 sec. Time 60150 sec. Figure 5. Recommended Reflow Soldering Profile http://onsemi.com 5 NBXSBA051 PACKAGE DIMENSIONS 6 PIN CLCC, 7x5, 2.54P CASE 848AB−01 ISSUE C A D 4X D1 0.15 C E2 TERMINAL 1 INDICATOR NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. B H E1 DIM A A1 A2 A3 b D D1 D2 D3 E E1 E2 E3 e H L R E D2 TOP VIEW A2 A3 0.10 C A SIDE VIEW A1 C 6.17 6.66 4.37 4.65 1.17 SOLDERING FOOTPRINT* 3 2 e 6X R 1.50 E3 0.10 C A B 0.05 C 0.08 1.30 MILLIMETERS NOM MAX 1.80 1.90 0.70 REF 0.36 REF 0.10 0.12 1.40 1.50 7.00 BSC 6.20 6.23 6.81 6.96 5.08 BSC 5.00 BSC 4.40 4.43 4.80 4.95 3.49 BSC 2.54 BSC 1.80 REF 1.27 1.37 0.70 REF SEATING PLANE D3 1 MIN 1.70 6X b 6 5 4 6X 5.06 L BOTTOM VIEW 2.54 PITCH 6X 1.50 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PureEdge is a trademark of Semiconductor Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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