NBXSPA022LN1TAG

NBXSPA022 2.5 V / 3.3 V, 187.5 MHz LVDS Clock Oscillator The NBXSPA022 single frequency crystal oscillator (XO) is designed to meet today’s requirements for 2.5 V and 3.3 V LVDS clock generation applications. The device uses a high Q fundamental crystal and Phase Lock Loop (PLL) multiplier to provide 187.5 MHz, ultra low jitter and phase noise LVDS differential output. This device is a member of ON Semiconductor’s PureEdget clock family that provides accurate and precision clock solutions. Available in 5 mm x 7 mm SMD (CLCC) package on 16 mm tape and reel in quantities of 1000. Features http://onsemi.com MARKING DIAGRAM NBXSPA022 187.5 AAWLYYWWG • • • • • • • • • LVDS Differential Output Uses High Q Fundamental Mode Crystal and PLL Multiplier Ultra Low Jitter and Phase Noise − 0.5 ps (12 kHz − 20 MHz) Output Frequency − 187.5 MHz Hermetically Sealed Ceramic SMD Package RoHS Compliant Operating Range: 2.5 V ±5% Operating Range: 3.3 V ±10% Total Frequency Stability − $50 ppm This is a Pb−Free Device 6 PIN CLCC LN SUFFIX CASE 848AB NBXSPA022 187.5 AA WL YY WW G or G = NBXSPA022 (±50 PPM) = Output Frequency (MHz) = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NBXSPA022LN1TAG NBXSPA022LNHTAG Package CLCC−6 (Pb−Free) CLCC−6 (Pb−Free) Shipping† 1000/ Tape & Reel 100/ Tape & Reel Applications • 12 Gb/s Ethernet Clock VDD 6 CLK CLK 54 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Crystal PLL Clock Multiplier 1 OE 2 NC 3 GND Figure 1. Simplified Logic Diagram © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 1 1 Publication Order Number: NBXSPA022/D NBXSPA022 OE NC GND 1 2 3 6 5 4 VDD CLK CLK Figure 2. Pin Connections (Top View) Table 1. PIN DESCRIPTION Pin No. 1 2 3 4 5 6 Symbol OE NC I/O LVTTL/LVCMOS Control Input N/A Description Output Enable Pin. When left floating pin defaults to logic HIGH and output is active. See OE pin description Table 2. No Connect Ground 0 V ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á Á Á Á Á ÁÁÁ ÁÁÁÁ ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁ ÁÁÁÁ Á ÁÁ GND CLK CLK VDD Power Supply LVDS Output LVDS Output Non−Inverted Clock Output. Typically loaded with 100 W receiver termination resistor across differential pair. Inverted Clock Output. Typically loaded with 100 W receiver termination resistor across differential pair. Positive power supply voltage. Voltage should not exceed 2.5 V ±5% or 3.3 V ±10%. Power Supply Table 2. OUTPUT ENABLE TRI−STATE FUNCTION OE Pin Open HIGH Level LOW Level Output Pins Active Active High Z Table 3. ATTRIBUTES Characteristic Input Default State Resistor ESD Protection Human Body Model Machine Model Value 170 kW 2 kV 200 V Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test 1. For additional Moisture Sensitivity information, refer to Application Note AND8003/D. Table 4. MAXIMUM RATINGS Symbol VDD Iout TA Tstg Tsol Parameter Positive Power Supply LVDS Output Current Operating Temperature Range Storage Temperature Range Wave Solder See Figure 5 Condition 1 GND = 0 V Continuous Surge Condition 2 Rating 4.6 25 50 −40 to +85 −55 to +120 260 Units V mA °C °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 2 NBXSPA022 Table 5. DC CHARACTERISTICS (VDD = 2.5 V ± 5% or VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 2) Symbol IDD VIH VIL IIH IIL DVOD Characteristic Power Supply Current OE Input HIGH Voltage OE Input LOW Voltage Input HIGH Current Input LOW Current Change in Magnitude of VOD for Complementary Output States (Note 3) Offset Voltage Change in Magnitude of VOS for Complementary Output States (Note 3) Output HIGH Voltage Output LOW Voltage Differential Output Voltage VDD = 2.5 V VDD = 3.3 V VDD = 2.5 V VDD = 3.3 V 900 250 2000 GND − 300 −100 −100 0 1 Conditions Min. Typ. 85 Max. 105 VDD 800 +100 +100 25 Units mA mV mV mA mA mV VOS DVOS 1125 0 1 1375 25 mV mV VOH VOL VOD 1425 1075 1600 mV mV 450 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure 4. 3. Parameter guaranteed by design verification not tested in production. http://onsemi.com 3 NBXSPA022 Table 6. AC CHARACTERISTICS (VDD = 2.5 V ± 5% or VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 4) Symbol fCLKOUT Df FNOISE Characteristic Output Clock Frequency Frequency Stability − NBXSPA022 Phase−Noise Performance fCLKout = 187.5 MHz (See Figure 3) (Note 5) 100 Hz of Carrier 1 kHz of Carrier 10 kHz of Carrier 100 kHz of Carrier 1 MHz of Carrier 10 MHz of Carrier tjit(F) tjitter RMS Phase Jitter Cycle to Cycle, RMS Cycle to Cycle, Peak−to−Peak Period, RMS Period, Peak−to−Peak tOE/OD tDUTY_CYCLE tR tF tstart Output Enable/Disable Time Output Clock Duty Cycle (Measured at Cross Point) Output Rise Time (20% and 80%) Output Fall Time (80% and 20%) Start−up Time Aging 1st Year Every Year After 1st 48 50 250 250 1 12 kHz to 20 MHz 1000 Cycles 1000 Cycles 10,000 Cycles 10,000 Cycles −96 −117 −124 −126 −133 −158 0.5 1 7 0.6 5 0.75 8 35 4 20 200 52 400 400 5 3 1 Conditions Min. Typ. 187.5 ±50 Max. Units MHz ppm dBc/Hz dBc/Hz dBc/Hz dBc/Hz dBc/Hz dBc/Hz ps ps ps ps ps ns % ps ps ms ppm ppm NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure 4. 5. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration and first year aging. Figure 3. Typical Phase Noise Plot at 187.5 MHz http://onsemi.com 4 NBXSPA022 Table 7. RELIABILITY COMPLIANCE Parameter Shock Mechanical Mechanical Mechanical Mechanical Mechanical Standard Method MIL−STD−833, Method 2002, Condition B MIL−STD−833, Method 2003 ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Solderability Vibration MIL−STD−833, Method 2007, Condition A MIL−STD−202, Method 215 Solvent Resistance Resistance to Soldering Heat Thermal Shock MIL−STD−203, Method 210, Condition I or J MIL−STD−833, Method 1001, Condition A MIL−STD−833, Method 1004 Environment Environment Moisture Resistance NBXSPA022 CLK Driver Device CLK Zo = 50 W Zo = 50 W 100 W D D Receiver Device Figure 4. Typical Termination for Output Driver and Device Evaluation Temperature (°C) 260 217 temp. 260°C 20 − 40 sec. max. peak 3°C/sec. max. ramp−up 6°C/sec. max. cooling 175 150 pre−heat reflow 60180 sec. 60150 sec. Time Figure 5. Recommended Reflow Soldering Profile http://onsemi.com 5 NBXSPA022 PACKAGE DIMENSIONS 6 PIN CLCC, 7x5, 2.54P CASE 848AB−01 ISSUE C D 4X A 0.15 C D1 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A A1 A2 A3 b D D1 D2 D3 E E1 E2 E3 e H L R SEATING PLANE MIN 1.70 0.08 1.30 6.17 6.66 4.37 4.65 MILLIMETERS NOM MAX 1.80 1.90 0.70 REF 0.36 REF 0.10 0.12 1.40 1.50 7.00 BSC 6.20 6.23 6.81 6.96 5.08 BSC 5.00 BSC 4.40 4.43 4.80 4.95 3.49 BSC 2.54 BSC 1.80 REF 1.27 1.37 0.70 REF TERMINAL 1 INDICATOR E2 H E1 E D2 TOP VIEW A3 0.10 C A A1 SIDE VIEW D3 1 2 3 A2 1.17 C SOLDERING FOOTPRINT* e R E3 1.50 6X 5.06 0.10 C A B 0.05 C 6X b 6 5 4 6X L 2.54 PITCH 1.50 DIMENSION: MILLIMETERS 6X BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PureEdge is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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